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6MBI75UA-120
www.DataSheet4U.com
IGBT Module U-Series
Features
1200V / 75A 6 in one-package
Applications
· High speed switching
· Voltage drive
· Low inductance module structure
· Uninterruptible power supply
· Inverter for Motor drive
· AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Symbol
VCES
Gate-Emitter voltaga
Collector current
VGES
IC
ICp
Conditions
Continuous Tc=25°C
1200
±20
100
Tc=80°C
Tc=25°C
75
200
Tc=80°C
150
75
1ms
-IC
-IC pulse
PC
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
between thermistor and others *2
Screw Torque
Mounting *3
Tj
Tstg
Viso
Unit
Rating
V
V
A
150
390
1 device
W
°C
+150
-40 to +125
2500
AC:1min.
VAC
N·m
3.5
-
*1 : All terminals should be connected together when isolation test will be done.
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols
Inverter
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
Turn-off time
tr
tr(i)
toff
Forward on voltage
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
Tj=25°C
VGE=15V, IC=75A
Tj=125°C
Tj=25°C
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC =600V
IC=75A
VGE=±15V
RG=9.1 Ω
tf
VF
(terminal)
VGE=0V
IF=75A
Thermistor
VF
Reverse recovery time
Lead resistance, terminal-chip*4
Resistance
(chip)
t rr
R lead
R
B value
B
*4:Biggest internal terminal resistance among arm.
Characteristics
Min.
Typ.
–
–
–
–
4.5
6.5
–
2.05
–
2.30
–
1.75
–
2.00
–
8
–
0.25
–
0.12
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
IF=75A
–
0.03
–
–
–
–
0.36
0.07
2.10
1.00
0.30
2.50
–
2.30
–
–
–
–
1.80
2.00
–
2.20
–
0.35
–
4.1
–
–
465
3305
T=25°C
T=100°C
T=25/50°C
Unit
Max.
1.0
200
8.5
2.40
–
2.10
–
–
1.20
0.60
5000
495
3375
mA
nA
V
V
nF
µs
V
µs
mΩ
Ω
–
520
3450
Κ
Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
Min.
Thermal resistance
Rth(j-c)
IGBT
Contact Thermal resistance
Rth(j-c)
Rth(c-f)*5
FWD
With thermal compound
–
–
–
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Downloaded from Elcodis.com electronic components distributor
Unit
Typ.
–
–
0.05
Max.
0.32
0.73
–
°C/W
°C/W
°C/W
IGBT Module
6MBI75UA-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Tj= 125°C/ chip
200
200
15V
VGE=20V
VGE=20V
12V
100
Collector current : Ic [A]
Collector current : Ic [A]
15V
12V
150
150
10V
100
10V
50
50
8V
8V
0
0
0
1
2
3
4
0
5
Collector-Emitter voltage : VCE [V]
1
2
4
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
200
T j=25°C
Collector - Emitter voltage : VCE [ V ]
10
150
Collector current : Ic [A]
3
Collector-Emitter voltage : VCE [V]
T j=125°C
100
50
8
6
4
Ic=150A
Ic=75A
Ic= 37.5A
2
0
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
VGE=0V, f= 1M Hz, Tj= 25°C
Vcc=600V, Ic=75A, Tj= 25°C
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE
[ 5V/div ]
Capacitance : Cies, Coes, Cres [ nF ]
100.0
Cies
10.0
Cres
1.0
Coes
VGE
VCE
0
0.1
0
10
20
Collector-Emitter voltage : VCE [V]
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30
0
100
200
Gate charge : Qg [ nC ]
300
400
IGBT Module
6MBI75UA-120
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj= 25°C
Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj=125°C
1000
1000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
toff
toff
ton
tr
100
tf
tr
ton
100
tf
10
10
0
50
100
150
0
200
Collector current : Ic [ A ]
100
150
200
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj= 25°C
Vcc=600V, VGE=±15V, Rg=9.1Ω
20
1000
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
10000
Switching time : ton, tr, toff, tf [ nsec ]
50
Collector current : Ic [ A ]
tr
toff
ton
100
tf
Eoff(125°C)
15
Eon(125°C)
10
Eoff(25°C)
Eon(25°C)
5
Err(125°C)
Err(25°C)
10
0
1
10
100
0
1000
Gate resistance : Rg [ Ω ]
50
100
150
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area (max.)
Vcc=600V, Ic=75A, VGE=±15V, Tj= 125°C
+VGE=15V,-VGE <= 15V, RG >= 9.1Ω ,Tj <= 125°C
Eon
20
Collector current : Ic [ A ]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
200
Eoff
10
150
100
50
Err
0
0
1
200
10
100
Gate resistance : Rg [ Ω ]
Downloaded from Elcodis.com electronic components distributor
1000
0
400
800
1200
Collector - Emitter voltage : VCE [ V ]
6MBI75UA-120
IGBT Module
Forward current vs. Forward on voltage (typ.)
Reverse recovery characteristics (typ.)
chip
Vcc=600V, VGE=±15V, Rg=9.1Ω
125
1000
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
T j=25°C
100
T j=125°C
75
50
25
10
0
0
1
2
3
0
4
Forward on voltage : VF [ V ]
50
100
150
200
Forward current : IF [ A ]
Temperature characteristic (typ.)
Transient thermal resistance (max.)
100
10.000
FWD
1.000
Resistance : R [ kΩ ]
Thermal resistanse : Rth(j-c) [ °C/W ]
trr (125°C)
Irr (125°C)
trr (25°C)
Irr (25°C)
100
IGBT
0.100
10
1
0.010
0.001
0.001
0.010
0.100
Pulse width : Pw [ sec ]
Downloaded from Elcodis.com electronic components distributor
1.000
0.1
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
Temperature [°C ]
IGBT Module
6MBI75UA-120
Outline Drawings, mm
M636
(
) shows reference dimension.
Equivalent Circuit Schematic
15,16
25,26
5
6
1
2
U
23,24
3
4
27,28
Downloaded from Elcodis.com electronic components distributor
9
10
V
21,22
7
8
W
19,20
11
12
13,14
17
18