R
FUJITSU LIMITED
Japan
7-1, Nishishinjuku 2-chome, Shinjuku-ku. Tokyo 163-0721
Tel：(81)3-5322-3347 / 3353 / 3354 Fax：(81)3-5322-3386
http://edevice.fujitsu.com/
North and South America
FUJITSU MICROELECTRONICS, INC.
3545 North First Street
San Jose, CA 95134-1804, USA
Tel : (408)922-9000
Fax : (408)922-9179
Customer Response Center
Mon.-Fri.: 7am-5pm (PST)
Tel : (800)866-8608
Fax : (408)922-9179
http://www.fujitsumicro.com/
Europe
FRAM Centre
FUJITSU MICROELECTRONICS
EUROPE GmbH
105 rue Jules Guesde, 92300
Levallois Perret, France
Tel : +33-1-5521-0040
Fax : +33-1-5521-0041
E-mail: [email protected]
Asia Pacific
FUJITSU MICROELECTRONICS
ASIA PTE. LTD.
#05-08, 151 Lorong Chuan
New Tech Park
Singapore 556741
Tel : (65)281-0770
Fax : (65)281-0220
http://www.fmap.com.sg/
Korea
FUJITSU MICROELECTRONICS
KOREA LTD.
1702 Kosmo Tower
1002 Daechi-Dong,
Kangnam-Gu, Seoul, Korea
135-280
Tel ：82(02)3484-7100
Fax：82(02)3484-7111
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with FUJITSU sales representatives before ordering.
The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is
unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams.
The products described in this document are designed, and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and
household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect
to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport
control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment
such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions.
If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by
Japanese government will be required for export of those products from Japan.
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2002
FUJITSU LIMITED Printed in Japan
○
AD05-00024-6E February, 2002M
Expanding the Use of FRAM Smart Cards
Your Passport to the Net!
FRAM FOR SMART CARDS
FRAM (Ferroelectric RAM) is nonvolatile memory that uses ferroelectric
film as a capacitor for storing data. It features high-speed operation,
high-endurance, low power consumption, tamper resistance and
nonvolatility. FRAM is particularly applicable to smart cards and portable
electronic devices that require security functions and low power
consumption. Fujitsu was the first to incorporate FRAM in
microcomputers and has already expanded its use to the smart card
industry with such applications as electronic train passes, government
cards, amusement tickets, and authentication. Fujitsu plans to expand
FRAM applications all the more in the years to come.
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FRAM FOR SMART CARDS
What is FRAM?
Characteristics of Fujitsu FRAM (Comparison with EEPROM)
FRAM (ferroelectric random access memory) is a non-volatile memory that uses ferroelectric film
as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, FRAM
features swift accessibility, high endurance in write mode, low power consumption, non-volatility,
and excellent tamper prevention. It is therefore ideal for use in Smart cards, where high security and
low power consumption are important, as well as in cellular phones and other devices.
■ Write Time
1.00E-00
1.00E-01
What is Ferroelectric material?
Baud-rate:
106Kbps
212Kbps
424Kbps
848Kbps
EEPROM: 5ms/16Bytes
＝312500ns/Byte
＞Baud-rate
1Byte
PZT (Pb (ZrTi)O3) material which has a perovskite-type structure (ABO3), is commonly used as a
typical ferroelectric material. An electric polarization of PZT (shift up/down of Zr/Ti atom)
remains after applying and removing an external electric field, from which a nonvolatile property
results. As a result of this, the power consumption required for data storage is very low.
Write Time (sec.)
1.00E-02
1.00E-03
1.00E-04
1.00E-05
■ Crystal structure of Ferroelectric material
1.00E-07
FRAM Write Cycle Time is short enough
to be ignored. Baud-Rate limits the
Transaction Time. EEPROM Write
Cycle Time limits the Transaction Time.
FRAM: 180ns/Byte
＜＜Baud-rate
1.00E-06
1
10
100
Data size (bit)
1000
10000
Writing time of 1 byte data on FRAM is 1/30,000 of EEPROM.
Electric field
: Pb
■ Energy Consumption
Energy consumption at 64-byte write cycle
:O
1000
: Zr / Ti
5mA×5ms×3.3V=82.5mW-ms
Comparison of FRAM® with other memory products
SRAM*1
DRAM*2
EEPROM*3
FLASH*4
FRAM*5
Memory type
Volatile back-up
Volatile
Non-volatile
Non-volatile
Non-volatile
Cell structure
6T
1T/1C
2T
1T
2T/2C
Read cycle (ns)
12
70
200
70
180
Internal write voltage (V)
3.3
3.3
20
12
(supply voltage 3.3V) (supply voltage 3.3V)
Energy consumption (mW-ms)
EEPROM
100
10
3.5mA×180ns×64cycles×3.3V=0.133mW-ms
1
1.5mA×180ns×64cycles×3.3V=0.057mW-ms
0.5μm, 5V
0.5μm, 3.3V
0.35μm, 3.3V
0.1
FRAM
FRAM current consumption is estimated
for low power Smart card application.
5/3.3
0.01
Write cycle
12ns
70ns
5ms
1 sec.
180ns
Data write
Overwrite
Overwrite
Erase + Write
Erase + Write
Overwrite
2000
（Year）
2001
Energy consumption of FRAM is 1/400 of EEPROM.
Byte
Sector
Unnecessary
Unnecessary
(64 byte page) （8K/16K/32K/64K）
Data erase
Unnecessary
Endurance
∞
∞
1E5
1E5
1E10
Stand-by current (μA)
7
1,000
20
5
20
Read operation current (mA/max.)
40
80
5
12
4
Write operation current (mA/max.)
40
80
8
35
4
■ Endurance
10,000,000,000
Notes: *1: 512K×8bit *2: 2M×8bit *3: 8K×8bit *4: 1M×8bit *5: 8K×8bit
Features of Fujitsu’s FRAM
Currently, EEPROM is mainly used for data memory in Smart cards. However, FRAM is superior
to EEPROM in terms of speed, low power consumption, and high endurance in write mode.
Compared with EEPROM, Fujitsu’s FRAM has the following features:
1. 1/30,000 high-speed write time
2. 1/400 power consumption
3. 100,000 times or more rewrite capacity
Maximum Access Endurance (/minute)
1,000,000,000
100,000,000
FRAM Read/Write
Endurance
10,000,000
1,000,000
100,000
1.E+12
10,000
1.E+11
1,000
1.E+10
100
EEPROM Erase/Write/Read
Endurance
10
1
0.1
1.E+05
0.01
0.001
0
2
4
6
8
Life Cycle (Year)
10
12
Endurance of FRAM is 100,000 times of EEPROM.
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FRAM FOR SMART CARDS
MB89R072A
HIFERRON
Contact IF ISO 7816, T=1
LSI for contactless smart cards
This is an LSI for contactless Smart cards,
in which a 4K bytes FRAM is embedded
in an 8-bit microcontroller. The LSI also
features an encryption circuit for
preventing misuse via counterfeit or
tampering, as well as an RF circuit,
which is an essential element of a
contactless Smart cards, a power source
circuit, and other features.
●
Contactless IF (RF/IF) ISO14443, Type B
16KByte MaskROM
DES Co-Processor
Multiple-application smart card LSI
This is an LSI for Smart cards in which
Java OS and 64K bytes FRAM are
embedded into a 32-bit Fujitsu RISC
processor (FR). By incorporating a FRAM
and encryption circuit (DES, RSA, or
Elliptic Curve Cryptography), multiple
applications can be executed at high
speed and with high security. It is truly
an LSI that meets the needs of the
e-commerce era.
●
256Byte SRAM
8bit CPU
4KByte FRAM
This photograph is the MB94R202
Features
Features
32 bit RISC CPU
64K, 128KByte FRAM
● 96K-128KByte Mask ROM
● 4KByte SRAM
● DES, Elliptic Curve Cryptography (F2m), RSA Cryptography encryption/decryption unit
● ISO7816, T=0, 1 contact interface
● ISO14443, Type B, T=CL, 13.56MHz contactless interface
● Anti-collision algorithm
● Target applications: Multi-application platform, government card, amusement ticket,
authentication, e-purse, etc.
● Compatible with multiple operating systems including Windows for Smart card, Java or Multos
8 bit CPU
4KByte FRAM
● 256 Byte SRAM
● 16KByte Mask ROM
● ISO14443, Type B 13.56MHz contactless interface
● ISO7816, T=1 contact interface
● Target applications: Government card, amusement ticket, authentication, e-purse functions, etc.
●
●
●
●
MB89R111 (BABYFACE)
MB89R905A/907A
Security LSI
This is the world’s first secure processor
that combines an Elliptic Curve
Cryptography co-processor with a FRAM
on a single chip. Compared with using
software, processing speed is increased
by more than 1,000 times. And
compared with EEPROM, writing time
for security-related information is faster
and consumes less power. The number
of possible rewrites is also dramatically
enhanced.
●
16KByte Mask ROM (MB89R905A)
32KByte Mask ROM (MB89R907A)
8bit CPU
ECC Co-Processor
4KByte FRAM
2KByte FRAM
Contactless IF (RF/IF)
ISO14443, Type B
Logic interface
1KByte SRAM
Features
8 bit CPU
4KByte FRAM
● 16K/32KByte Mask ROM
● 1KByte SRAM
● Operating Frequency 3.58MHz
Minimum command operating time: 0.28μs
● 2 field base ECC (Elliptic Curve Cryptography)
● Key length 239 bit (max)
● Digital signature creation/confirmation, encryption/decryption, key exchange is available by
firmware
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● LSI for RFID
This is an LSI for contactless memory
cards with an embedded 2K bytes FRAM.
It is ideal for such applications as
electronic train passes, telephone cards,
ID cards, amusement tickets, access
control, and general-purpose tags
(baggage tag, FA, etc.).
Features
2KByte FRAM
ISO14443, Type B 13.56MHz contactless interface
● Anti-collision algorithm
● Target applications: Identification of persons or objects, transportation, industrial control,
retail, etc.
● Distance range 10cm
● Engineering samples available
●
●
●
●
FRAM is a registered trademark of Ramtron International Corporation
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