FLM3135-4F
C-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
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High Output Power: P1dB = 36.5dBm (Typ.)
High Gain: G1dB = 12.0dB (Typ.)
High PAE: ηadd = 38% (Typ.)
Low IM3 = -45dBc@Po = 25.5dBm
Broad Band: 3.1 ~ 3.5GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package
DESCRIPTION
The FLM3135-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Condition
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
25
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Symbol
Test Conditions
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 1100mA
Vp
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Drain Current
Idsr
ηadd
Power-added Efficiency
Gain Flatness
Min.
-
Limit
Typ. Max.
1950 2900
1000
Unit
mA
VDS = 5V, IDS = 90mA
-1.0
-2.0
-3.5
mS
V
IGS = -90µA
-5.0
-
-
V
35.5
36.5
-
dBm
11.0
12.0
-
dB
VDS =10V,
IDS = 0.55 IDSS (Typ.),
f = 3.1 ~ 3.5 GHz,
ZS=ZL= 50 ohm
∆G
-
1100 1300
mA
-
38
-
%
-
-
±0.6
dB
-42
-45
-
dBc
3rd Order Intermodulation
Distortion
IM3
f = 3.5 GHz, ∆f = 10 MHz
2-Tone Test
Pout = 25.5dBm S.C.L.
Thermal Resistance
Rth
Channel to Case
-
5.0
6.0
°C/W
∆Tch
10V x Idsr x Rth
-
-
80
°C
Channel Temperature Rise
CASE STYLE: IB
Edition 1.1
August 2004
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
1
FLM3135-4F
C-Band Internally Matched FET
OUTPUT POWER & IM3 vs. INPUT POWER
32
Output Power (S.C.L.) (dBm)
24
18
12
6
0
50
100
150
30
VDS=10V
f1 = 3.5 GHz
f2 = 3.51 GHz
2-tone test
Pout
28
-15
-25
26
IM3
24
-35
22
-45
20
-55
200
Case Temperature (°C)
11
13
15
17
19
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
OUTPUT POWER vs. INPUT POWER
VDS = 10V
f = 3.3 GHz
VDS=10V
P1dB
38
24dBm
36
22dBm
34
20dBm
32
18dBm
30
3.1
3.2
3.3
3.4
3.5
36
Pout
34
45
ηadd
32
30
30
15
18
20
22
24
Input Power (dBm)
Frequency (GHz)
2
26
ηadd (%)
Pin=26dBm
Output Power (dBm)
38
Output Power (dBm)
Total Power Dissipation (W)
30
IM3 (dBc)
POWER DERATING CURVE
FLM3135-4F
C-Band Internally Matched FET
S11
S22
+j50
3.3
+j100
+j25
3.4
3.1
3.2
3.3
3.4
3.5
+j10
3.3
10
25
50Ω
3.5
3.1
3.6GHz
3.3
3.4
3.0
3.0
100
180°
250
3.5
0.1
0.2
0°
3.6GHz
SCALE FOR |S12|
3.2
3.6GHz
3.2
3.1
+j250
3.6GHz
0
3.4
3.2
3.0
3.5
S21
S12
+90°
1
3.0
-j250
2
SCALE FOR |S21|
3.1
-j10
-j100
-j25
-j50
3
4
-90°
S-PARAMETERS
VDS = 10V, IDS = 1100mA
FREQUENCY
(MHZ)
MAG
S11
ANG
MAG
S21
ANG
MAG
S12
ANG
MAG
ANG
3000
3100
3200
3300
3400
3500
3600
.404
.388
.450
.515
.548
.528
.445
-66.7
-120.4
-167.3
158.3
130.3
104.0
74.0
4.467
4.711
4.741
4.649
4.553
4.545
4.607
169.3
145.8
122.5
100.6
79.5
58.4
35.5
.074
.081
.085
.089
.090
.095
.101
119.4
97.0
75.2
55.6
36.8
18.6
-0.5
.678
.582
.478
.395
.332
.275
.201
100.7
93.1
88.6
87.4
86.9
84.3
76.7
3
S22
FLM3135-4F
C-Band Internally Matched FET
2.0 Min.
(0.079)
Case Style "IB"
Metal-Ceramic Hermetic Package
1
0.1
(0.004)
2
12.9±0.2
(0.508)
2-R 1.6±0.15
(0.063)
3
2.6±0.15
(0.102)
2.0 Min.
(0.079)
0.6
(0.024)
5.2 Max.
(0.205)
1.45
(0.059)
0.2 Max.
(0.008)
10.7
(0.421)
1. Gate
2. Source (Flange)
3. Drain
12.0
(0.422)
Unit: mm(inches)
17.0±0.15
(0.669)
21.0±0.15
(0.827)
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.us.eudyna.com
• Do not put this product into the mouth.
Eudyna Devices Europe Ltd.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
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