NJL5902R-1
COBP PHOTO REFLECTOR
„ GENERAL DESCRIPTION
The NJL5902R-1 is the compact surface mount type photo reflector in which Lead (Pb)-free reflow soldering permitted (260°C,
2times). The NJL5902R-1 reduced to the operating dark current of 1/6 compared with our conventional products/NJL5901R-1,
and has realized the high S/N ratio in the combination of the high output LED and a high sensitivity Si photo-transistor.
„ FEATURES
„ OUTLINE (typ.)
• High S/N ratio
2.0
• Operating dark current: 0.5μA max.
Unit : mm
±0.1
(1.13)
0.45 ±0.1
• Pb free solder re-flowing permitted: 260°C, 2times
K
E
• Detecting the location of optical pickup head for CD/DVD
PT CENTER
• Detecting the location of lens for DSC and Cellular phone’s
camera module
0.2 ±0.1
0.4 ±0.1
0.4 ±0.1
„ APPLICATIONS
(0.2)
1.6 ±0.1
• Built-in visible light cut-off filter
(0.57)
C
• Miniature, thin, surface mount: 1.6mm × 2.0mm × 0.6mm
A
0.2 ±0.1
0.65
0.4 0.4
0.4
0.6 ±0.1
0.5
A : anode
• Paper edge detection and mechanism timing detection of
facsimile, copy machine etc.
„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
Emitter
Forward Current (Continuous)
IF
30
Reverse Voltage (Continuous)
VR
6
Power Dissipation
45
PD
VCEO
VECO
IC
PC
Coupled
Total Power Dissipation
Operating Temperature
Storage Temperature
Reflow Soldering Temperature
Ptot
Topr
Tstg
Tsol
(0.2)
(0.2)
LED CENTER
0.65
• Detecting the rotation of various motors
Detector
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
0.45 ±0.1
(0.2)
(0.45)
(0.57)
K : cathode
C : collector
E : emitter
PCB pattern
UNIT
mA
V
mW
16
6
10
25
V
V
mA
mW
60
-30 to +85
-40 to +100
260
mW
°C
°C
°C
„ ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
Emitter
Forward Voltage
Reverse Current
Capacitance
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
—
—
1.3
10
25
—
V
μA
pF
—
—
0.2
—
—
400
0.5
30
30
—
—
VF
IR
Ct
IF=4mA
VR=6V
VR=0V,f=1MHz
0.9
—
—
Detector
Dark Current
Collector-Emitter Voltage
ICEO
VCEO
VCE=10V
IC=100μA
16
Coupled
Output Current
Operating Dark Current *1
Rise Time
Fall Time
IO
ICEOD
tr
tf
IF=4mA,VCE=2V,d=0.7mm
IF=4mA,VCE=2V
IO=100μA,VCE=2V,RL=1KΩ,d=0.7mm
IO=100μA,VCE=2V,RL=1KΩ,d=0.7mm
—
160
—
—
—
—
μA
V
μA
μA
μs
μs
*1 Icoed may increase according to the periphery situation of the surface mounted product.
16-Feb-07
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NJL5902R-1
„ OUTPUT CURRENT TEST CONDITION
„ DARK CURRENT TEST CONDITION
The infrared signal from LED is reflected at the aluminum surface.
( 0.6mm)
Aluminum
Evaporation
Surface
1.3 mm
Light Sealed Dark Box
IF
Iceod
IF
Io
VCE
VCE
„ RESPONSE TIME TEST CONDITION
0.7mm
Aluminum
Input
Evapolation
90%
Surface
V+
RD
P.G
IF
RL
Output
10%
OSC
tr
tf
Io
„ EDGE RESPONSE TEST CONDITION
l=0mm
l=0mm
0.7mm
0.7mm
Aluminum
Evaporation
Surface
Aluminum
Evaporation
Surface
Direction X
16-Feb-07
Direction Y
-2-
NJL5902R-1
Forward Current vs. Temperature
100
50
90
45
80
40
Forward Current IF(mA)
Power Dissipation P(mW)
Power Dissipation vs. Temperature
70
60
Total Power
50
Dissipation
40
30
20
35
30
25
20
15
10
Collector Power
10
5
Dissipation
0
0
0
20
40
60
80
100
0
20
Ambient Temperature Ta(°C)
40
60
80
100
Ambient Temperature Ta(°C)
„ TYPICAL CHARACTERISTICS
Forward Voltage vs. Forward Current
Forward Voltage vs. Temperature
100
1.6
Forward Voltage VF(V)
Forward Current IF(mA)
1.4
10
IF=30mA
1.2
IF=4mA
1
0.8
1
0
1
-40
2
-20
0
20
40
60
80
100
Ambient Temperature Ta(°C)
Forward Voltage VF(V)
Dark Current vs. Temperature
Operating Dark Current vs. Temperature
10000
10
Operating Dark Current Iceod(μA)
Dark Current Iceo(nA)
1000
100
10
VCE=10V
1
0.1
1
IF=4mA , VCE=2V
0.1
0.01
0.001
0.01
-40
-20
0
20
40
60
Ambient Temperature Ta(°C)
16-Feb-07
80
100
-40
-20
0
20
40
60
80
100
Ambient Temperature Ta(°C)
-3-
NJL5902R-1
Output Current vs. Forward Current
(Ta=25°C)
Output Current vs. Temperature
800
120
Relative Output Current Io/Io(25°C)(%)
700
Output Current Io(μA)
600
500
400
300
200
VCE=2V , d=0.7mm
100
100
80
60
40
IF=4mA , VCE=2V
20
0
0
0
2
4
6
8
-40
10
Forward Current IF(mA)
-20
0
20
40
60
80
100
Ambient Temperature Ta(°C)
Output Characteristics (Ta=25°C)
Vce Saturation (Ta=25°C)
800
0.5
IF=10mA
Output Current Io(μA)
600
Collector-Emitter Voltage Vce(V)
700
IF=8mA
500
IF=6mA
400
300
IF=4mA
200
IF=2mA
0.4
0.3
Io=400μA
Io=300μA
Io=200μA
0.2
Io=100μA
0.1
100
0
0
0
1
2
3
4
5
0.1
1
Collector-Emitter Voltage Vce(V)
10
Forward Current IF(mA)
Output Current vs. Distance (Ta=25°C)
Output Current vs. Edge Distance (Ta=25°C)
120
120%
Relative Output Current Io/Io(max.)(%)
Relative Output Current Io/Io(max.)(%)
IF=4mA , VCE=2V , d=0.7mm
100
IF=4mA , VCE=2V
80
60
40
20
0
80%
Direction X
60%
40%
Direction Y
20%
0%
0
1
2
3
Reflector Distance d(mm)
16-Feb-07
100%
4
5
0
0.4
0.8
1.2
1.6
2
Edge Distance l(mm)
-4-
NJL5902R-1
Switching Time vs. Load Resistance
(Ta=25°C)
Spectral Response (Ta=25°C)
1000
120
100
tr
Switching Time t(μs)
Relative Response (%)
VCE=2V
80
60
40
100
tf
td
10
20
VCE=2V , Io=100μA
0
500
1
600
700
800
Wavelength λ(nm)
16-Feb-07
900
1000
0.1
1
10
Load Resistance RL(kΩ)
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NJL5902R-1
PRECAUTION FOR HANDLING
1. Soldering to actual circuit board
Soldering condition
The surface temperature of plastic package is lower than 260°C.
Soldering Method
1) Reflow Method
Soldering to be done within twice under the recommended condition mentioned below
f
260°C
e
230°C
220°C
d
180°C
150°C
a : Temperature ramping rate
b : Pre-heating temperature
time
c : Temperature ramping rate
d : 220°C or higher time
e : 230°C or higher time
f : Peak temperature
: 1 to 4°C/s
: 150 to 180°C
: 60 to 120s
: 1 to 4°C /s
: Shorter than 60s
: Shorter than 40s
g : Temperature ramping rate
: 1 to 6°C /s
: Lower than 260°C
The temperature of the surface of mold package
Room
Temp.
a
b
c
g
2) Reflow Method (In case of infrared heating)
The temperature profile is same as the above
Avoid direct irradiation to the plastic package because it may absorb the Infrared Radiation and its surface
temperature will be higher than the lead.
3) The other method
Avoid rapid heating up like dipping the devices directly into the melting solder or vapor phase method (VPS).
Solder the device in short time as soon as possible.
If the device is heated and kept in high temperature for longer time, its reliability would be affected.
2. Cleaning
Avoid washing the device after soldering by reflow method.
3. Attention in handling
1)
2)
3)
4)
Treat not to touch the lens surface.
Avoid dust and any other foreign materials on the lens surface such as paint, bonding material, etc.
Never to apply reverse voltage (VEC) of more than 6V on the photo transistor when measuring the characteristics or
adjusting the system. If applied, it causes to lower the sensitivity.
When mounting, special care has to be taken on the mounting position and tilting of the device because it is very
important to place the device to the optimum position to the object.
4. Storage
Mount the device as soon as possible after opening the envelope. In order to prevent from degradation by the moisture at
the reflow process, the device is contained in damp proof packaging.
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NJL5902R-1
NJL5902R-1 Taping Specification
(TE1)
1. Taping Size
1) Carrier tape is used with Styrene type Carbonated Plastic.
2) Cover tape is used with electro statistically prevention treated Polyester type tape.
3) Product taping direction is to place the index mark against the pull out direction of the tape as in the drawing.
Pull out direction of tape
UNIT : mm
φ 1.5
4.0
0.25
8.0
3.5
2.2
1.75
2.0
1.8
0.85
Cover Tape
4.0
Carrier Tape
2. Taping Strength
Pull up the cover tape from the carrier tape, and when the opening angle comes around 10 to 15°, and the peeling-off
strength is to be within the power of 20 to 70g.
3. Packaging
1) The taped products are to be rolled up on the taping reel as on the drawing.
2) Rolling up specification
2-1) Start rolling
: Carrier tape open space more than 20 Pieces.
2-2) End of rolling : Carrier tape open space more than 20 Pieces, and 2 round of reel space at the cover tape only.
3) Taping quantity
: 2,000 Pieces.
4) Seal off after putting each reels in a damp proof bag with silica gel.
Unit : mm
8.5
φ 180
φ 60
φ 13
Label
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
16-Feb-07
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