The eGaN® FET Journey Continues eGaN® FET Application: High Frequency Resonant Converters David Reusch Efficient Power Conversion Corporation www.epc-co.com EPC - The Leader in eGaN® FETs 1 Agenda • Overview of Power Architecture • Hard Switching Converters with eGaN®FETs • Soft Switching Converters with eGaN®FETs • Summary EPC - The Leader in eGaN® FETs www.epc-co.com 2 Intermediate Bus Architecture AC input: 90~265 V AC/DC Front End AC/DC Front End 36-75 V Bus Converter Bus Converter 9.6-12 V EPC - The Leader in eGaN® FETs POL POL POL 5V 3. 3V 1.2 V www.epc-co.com 3 Ideal Hard Switching TVR VIN TCF VDS IDS IOFF VGS VPL VTH EPC - The Leader in eGaN® FETs t www.epc-co.com 44 100V Hard Switching FOM FOM=(QGD+QGS2)*RDSON (nC*Ω) 160 140 QGS2 120 100 QGS2 80 60 QGS2 40 20 0 QGS2 QGD QGD QGS2 QGD QGD QGD 100 V eGaN®FET 80 V MOSFET 1 80 V MOSFET 2 80 V MOSFET 3 80 V MOSFET 4 VDS=0.5*VDS , IDS= 15 A EPC - The Leader in eGaN® FETs www.epc-co.com 5 Hard Switching Design 96% 375 kHz eGaN FET Efficiency 94% 92% 250 kHz MOSFET 90% 36V MOSFET 36V eGaN FET 48V MOSFET 48V eGaN FET 60V MOSFET 60V eGaN FET 88% 86% 84% 0 2 4 6 8 EPC9102 Demo board 10 12 14 16 18 Output Current (A) 36 - 60 Vin, 12 Vout, 200 W, 375 kHz EPC - The Leader in eGaN® FETs www.epc-co.com 6 Resonant Bus Converter High Frequency DC/DC Transformer SR1 VGS(Q1,Q3) VGS(SR1) 4:1 VGS(Q2,Q4) VGS(SR2) 48V 12V ILK1 ILK2 SR2 Ref: Y. Ren, M. Xu, J. Sun, and F. C. Lee, “A family of high power density unregulated bus converters,” IEEE Trans. Power Electron., vol. 20, no. 5, pp. 1045–1054, Sep. 2005. EPC - The Leader in eGaN® FETs www.epc-co.com 7 100V Soft Switching FOM FOM=(QOSS or QG)*RDSON (nC*Ω) 350 300 250 200 QOSS QOSS 150 QOSS 100 QG 50 0 QG QG 100 V EPC2001 80 V BSC057N08NS3G 80 V BSZ123N08NS3G VDS=48 V EPC - The Leader in eGaN® FETs www.epc-co.com 88 40V Soft Switching FOM FOM=(QOSS or QG)*RDSON (nC*Ω) 160 140 120 100 80 QG 60 QOSS 40 QOSS 20 QOSS QG QG 0 40 V EPC2015 40 V BSC027N04LSG 40 V BSZ040N04LSG VDS=48 V EPC - The Leader in eGaN® FETs www.epc-co.com 99 eGaN® FET vs MOSFET MOSFET EPC - The Leader in eGaN® FETs vs. eGaN® FET www.epc-co.com 10 ZVS Switching Comparison TZVS = 42 nS eGaN FET VDS MOSFET VDS TZVS = 87 nS MOSFET VGS eGaN FET VGS FS = 1.2 MHz, VIN = 48 V, and VOUT ≈ 12 V EPC - The Leader in eGaN® FETs www.epc-co.com 11 Duty Cycle Comparison DeGaN FET = 42% D MOSFET = 34% MOSFET VGS eGaN FET VDS MOSFET VDS eGaN FET VGS FS = 1.2 MHz, VIN = 48 V, and VOUT ≈ 12 V EPC - The Leader in eGaN® FETs www.epc-co.com 12 Efficiency Comparison 98 1.2 MHz eGaN FET 10 W 12 W 14 W 96 95 1.2 MHz MOSFET 94 22 Power Loss (W) 97 Efficiency (%) 24 93 92 91 20 1.2 MHz MOSFET 18 16 14 12 10 8 1.2 MHz eGaN FET 6 4 90 2 0 5 10 15 20 25 30 Output Current (IOUT) 35 40 0 5 10 15 20 25 30 35 40 www.epc-co.com 13 Output Current (IOUT) FS = 1.2 MHz, VIN = 48 V, and VOUT ≈ 12 V EPC - The Leader in eGaN® FETs Loss Breakdown Power Loss (W) 12 10 Gate Drive 8 Transfomrer Core Conduction + Turn Off 6 4 2 0 eGaN FET IOUT = 2.5 A MOSFET IOUT = 2.5 A eGaN FET MOSFET IOUT = 20 A IOUT = 20 A FS = 1.2 MHz, VIN = 48 V, and VOUT ≈ 12 V EPC - The Leader in eGaN® FETs www.epc-co.com 14 Frequency Capability 98 1.6 MHz eGaN FET 10 W 12 W 14 W 96 95 0.8 MHz MOSFET 94 22 20 Power Loss (W) 97 Efficiency (%) 24 93 92 91 18 16 14 12 0.8 MHz MOSFET 10 8 1.6 MHz eGaN FET 6 4 90 2 0 5 10 15 20 25 30 35 40 0 5 Output Current (IOUT) 10 15 20 25 30 35 40 Output Current (IOUT) VIN = 48 V, and VOUT ≈ 12 V EPC - The Leader in eGaN® FETs www.epc-co.com 15 EPC9105 Bus Converter EPC9105 Demonstration Board 36 - 60 VIN, 12 VOUT, 350 W, 1.2 MHz LIN Q1 4:1 2 SR Q6,Q7 VOUT+ * VIN+ Q3 * LK1 LOUT CIN * CRES VIN- Q2 Q4 LK2 2 SR Q5,Q8 EPC - The Leader in eGaN® FETs COUT VOUTwww.epc-co.com 16 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 Power Loss (W) Efficiency (%) EPC9105 Bus Converter 48 VIN 0 5 10 15 20 25 30 Output Current (Io) 35 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 36 VIN 48 VIN 55 VIN 60 VIN 0 5 10 15 20 25 30 35 www.epc-co.com 17 Output Current (A) FS = 1.2 MHz, VIN = 36-60 V, and VOUT ≈ VIN /4 EPC - The Leader in eGaN® FETs Summary eGaN FETs improve high frequency resonant converter performance • Lower output charge • Lower gate charge • More power delivery per cycle EPC - The Leader in eGaN® FETs www.epc-co.com 18 The end of the road for silicon….. is the beginning of the eGaN FET journey! EPC - The Leader in eGaN® FETs www.epc-co.com 19
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