Advance Technical Information
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH42N250
VCES = 2500V
IC110 = 42A
VCE(sat)  3.0V
TO-247 AD
Symbol
Test Conditions
Maximum Ratings
VCES
TC = 25°C to 150°C
2500
V
VCGR
TJ = 25°C to 150°C, RGE = 1M
2500
V
VGES
Continuous
± 25
V
VGEM
Transient
± 35
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
104
42
400
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 20
Clamped Inductive Load
ICM = 84
1250
A
V
TSC
(SCSOA)
VGE = 15V, TJ = 125°C,
RG = 82, VCE = 1250V, Non-Repetitive
10
μs
PC
TC = 25°C
500
W

-55 ... +150
°C

TJM
150
°C

Tstg
-55 ... +150
°C
300
260
°C
°C
1.13/10
Nm/lb.in
6
g
TJ
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
Weight
G
C
E
G = Gate
E = Emitter
Tab
C
= Collector
Tab = Collector
Features

High Blocking Voltage
International Standard Package
Anti-Parallel Diode
Low Conduction Losses
Advantages


Low Gate Drive Requirement
High Power Density
Applications
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 1mA, VGE = 0V
2500
VGE(th)
IC
= 1mA, VCE = VGE
3.0
ICES
VCE = 0.8 • VCES, VGE = 0V
IGES
VCE = 0V, VGE = ± 25V
VCE(sat)
IC
TJ = 125°C
250

V

5.0
V

50
μA
μA


Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
±200 nA
= 42A, VGE = 15V, Note 1
2.5
TJ = 125°C
© 2015 IXYS CORPORATION, All Rights Reserved
3.1
3.0
V
V
DS100587(01/14)
IXBH42N250
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfS
Characteristic Values
Min.
Typ.
Max.
IC = 42A, VCE = 10V, Note 1
28
Cies
Coes
VCE = 25V, VGE = 0V, f = 1MHz
45
S
4780
pF
170
pF
Cres
RGi
56
Gate Input Resistance
3.0
Qg
Qge
IC = 42A, VGE = 15V, VCE = 1000V
tr
td(off)
tf
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 25°C
IC = 42A, VGE = 15V
VCE = 1250V, RG = 20
Resistive Switching Times, TJ = 125°C
IC = 42A, VGE = 15V
VCE = 1250V, RG = 20

28
nC
75
nC
72
ns
330
ns
445
ns
610
ns
72
ns
580
ns
460
ns
490
ns
A
B
E
Q
S
R
D2
D1
D
P1
1
2
4
3
L1

nC
RthJC
D
A
A2
pF
200
Qgc
td(on)
TO-247 (IXBH) Outline
C
E1
L
A1
C
b
b2
b4
e
1 - Gate
2,4 - Collector
3 - Emitter
0.25 °C/W
RthCS
0.21
°C/W
Reverse Diode
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max
VF
IF = 42A, VGE = 0V, Note 1
trr
IF = 21A, VGE = 0V, -diF/dt = 100A/μs
1.7
μs
IRM
VR = 100V, VGE = 0V
43
A
Note
2.5
V
1. Pulse test, t < 300s, duty cycle, d < 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXBH42N250
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
90
320
VGE = 25V
20V
15V
80
70
15V
240
60
10V
I C - Amperes
I C - Amperes
VGE = 25V
20V
280
50
40
30
200
10V
160
120
80
20
40
10
5V
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
6
7
8
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
90
1.8
VGE = 25V
20V
15V
80
9
10
VGE = 15V
1.6
I C - Amperes
60
VCE(sat) - Normalized
70
10V
50
40
30
I C = 84A
1.4
1.2
I C = 42A
1.0
20
I C = 21A
0.8
10
5V
0
0.6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50
-25
0
VCE - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
5.5
180
TJ = 25ºC
5.0
TJ = - 40ºC
25ºC
125ºC
160
4.5
I C - Amperes
VCE - Volts
140
4.0
3.5
I C = 84A
3.0
42A
120
100
80
60
2.5
40
2.0
20
21A
0
1.5
5
7
9
11
13
15
17
19
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
21
23
25
4
4.5
5
5.5
6
6.5
7
VGE - Volts
7.5
8
8.5
9
9.5
IXBH42N250
Fig. 7. Transconductance
80
Fig. 8. Forward Voltage Drop of Intrinsic Diode
140
TJ = - 40ºC
70
120
60
50
I F - Amperes
g f s - Siemens
TJ = 25ºC
100
25ºC
125ºC
40
30
TJ = 125ºC
80
60
40
20
20
10
0
0
0
20
40
60
80
100
120
140
160
180
200
0
0.5
1
1.5
2
2.5
Fig. 9. Gate Charge
3.5
35
40
Fig. 10. Capacitance
16
10,000
VCE = 1000V
14
I C = 42A
Capacitance - PicoFarads
C ies
I G = 10mA
12
VGE - Volts
3
VF - Volts
I C - Amperes
10
8
6
4
1,000
C oes
100
Cres
2
f = 1 MHz
0
10
0
20
40
60
80
100
120
140
160
180
200
0
5
10
15
20
25
30
VCE - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Reverse-Bias Safe Operating Area
1
90
80
0.1
60
Z (th)JC - ºC / W
I C - Amperes
70
50
40
30
20
TJ = 125ºC
10
RG = 20Ω
dv / dt < 10V / ns
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
0.01
0.001
0.00001
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXBH42N250
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
650
650
RG = 20Ω , VGE = 15V
600
600
VCE = 1250V
TJ = 125ºC
550
t r - Nanoseconds
t r - Nanoseconds
550
500
450
I C = 84A
400
I C = 42A
500
VCE = 1250V
450
400
350
350
300
300
250
RG = 20Ω , VGE = 15V
TJ = 25ºC
250
25
35
45
55
65
75
85
95
105
115
125
40
45
50
55
60
TJ - Degrees Centigrade
1800
t d(on) - - - -
320
VCE = 1250V
200
800
160
I C = 42A
600
120
400
80
t f - Nanoseconds
t r - Nanoseconds
1000
600
460
I C = 42A
500
440
400
420
I C = 84A
300
200
40
60
80
100
120
140
160
25
35
45
55
65
75
85
95
105
115
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
800
1100
500
tf
700
t d(off) - - - -
tf
1000
480
RG = 20Ω, VGE = 15V
440
400
420
TJ = 125ºC
t f i - Nanoseconds
TJ = 25ºC
500
2800
2400
I C = 42A
700
2000
600
1600
500
1200
400
300
800
I C = 84A
400
300
200
380
40
45
50
55
60
65
70
75
I C - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
80
85
3600
3200
VCE = 1250V
800
380
125
400
200
20
40
60
80
100
120
RG - Ohms
140
160
0
180
t d(off) - Nanoseconds
460
t d(off) - Nanoseconds
600
t d(off) - - - -
TJ = 125ºC, VGE = 15V
900
VCE = 1250V
t f - Nanoseconds
400
200
40
180
t d(off) - Nanoseconds
240
480
VCE = 1250V
t d(on) - Nanoseconds
I C = 84A
20
85
t d(off) - - - -
RG = 20Ω, VGE = 15V
700
280
1200
80
500
tf
TJ = 125ºC, VGE = 15V
1400
75
800
360
tr
70
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
1600
65
I C - Amperes
IXBH42N250
Fig. 19. Forward-Bias Safe Operating Area @ T C = 25ºC
1000
Fig. 20. Forward-Bias Safe Operating Area @ T C = 115ºC
1000
VCE(sat) Limit
VCE(sat) Limit
100
100
10
25µs
100µs
1
I C - Amperes
I C - Amperes
10
1ms
10ms
0.1
25µs
100µs
1
1ms
0.1
100ms
DC
10ms
TJ = 150ºC
0.01
TJ = 150ºC
0.01
TC = 25ºC
100ms
DC
TC = 115ºC
Single Pulse
Single Pulse
0.001
0.001
1
10
100
1000
10000
1
VCE - Volts
10
100
1000
10000
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: B_42N250 (8M) 3-18-15