NT2L1001_NT2H1001
NTAG 210µ, NFC Forum Type 2 Tag compliant IC with 48 bytes
user memory
Rev. 3.0 — 7 September 2016
343930
Product data sheet
COMPANY PUBLIC
1. Introduction
NXP Semiconductors developed the NTAG 210µ as a standard NFC tag IC to be used in
mass market applications such as retail, gaming and publishing. It is used in combination
with NFC devices or NFC-compliant Proximity Coupling Devices. NTAG 210µ is designed
to comply fully with NFC Forum Type 2 Tag (Ref. 2) and ISO/IEC14443 Type A (Ref. 1)
specifications.
Target applications include Out-of-Home and print media smart advertisement, SoLoMo
applications, product authentication, NFC shelf labels, mobile companion tags and
gaming.
The mechanical and electrical specifications of NTAG 210µ are tailored to meet the
requirements of inlay and tag manufacturers.
2. General description
2.1 Contactless energy and data transfer
Communication to NTAG 210µ can be established only when the IC is connected to an
antenna. Form and specification of the coil is out of scope of this document.
When NTAG 210µ is positioned in the RF field, the high-speed RF communication
interface allows the transmission of the data with a baud rate of 106 kbit/s.
NTAG IC
ENERGY
NFC TAG
NFC
ENABLED DEVICE
DATA
001aao403
Fig 1.
Contactless system
NT2L1001_NT2H1001
NXP Semiconductors
NTAG 210µ, NFC Forum Type 2 Tag compliant IC
2.2 Simple deployment and user convenience
NTAG 210µ offers specific features designed to improve integration and user
convenience:
• NTAG 210µ is available as 17 pF and 50 pF version
• The excellent RF performance allows for more flexibility in the choice of shape,
dimension and materials
• The option for 75 m IC thickness enables the manufacturing of ultrathin tags, for a
more convenient integration in e.g. magazines or gaming cards.
2.3 Security
•
•
•
•
Manufacturer programmed 7-byte UID for each device
Pre-programmed Capability container with one time programmable bits
Field programmable read-only locking function per page
Pre-programmed ECC-based originality signature, offering the possibility for
customizing and permanently locking
2.4 NFC Forum Tag 2 Type compliance
NTAG 210µ IC provides full compliance to the NFC Forum Tag 2 Type technical
specification (see Ref. 2) and enables NDEF data structure configurations (see Ref. 3).
2.5 Anticollision
An intelligent anticollision function allows more than one tag to operate in the field
simultaneously. The anticollision algorithm selects each tag individually. It ensures that the
execution of a transaction with a selected tag is performed correctly without interference
from another tag in the field.
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NTAG 210µ, NFC Forum Type 2 Tag compliant IC
3. Features and benefits





Contactless transmission of data and supply energy
Operating frequency of 13.56 MHz
Data transfer of 106 kbit/s
Data integrity of 16-bit CRC, parity, bit coding, bit counting
Operating distance up to 100 mm (depending on various parameters as e.g. field
strength and antenna geometry)
 7 bytes serial number (cascade level 2 according to ISO/IEC 14443-3)
 Originality signature
 True anticollision
3.1 EEPROM






64 bytes organized in 16 pages with 4 bytes per page
48 bytes freely available user Read/Write area (12 pages)
4 bytes initialized capability container with one time programmable access bits
Field programmable read-only locking function per page
Anti-tearing support for capability container (CC) and lock bits
Pre-programmed ECC-based originality signature, offering the possibility for
customizing and permanently locking
 Data retention time of 10 years
 Write endurance 100,000 cycles
4. Applications








NT2L1001_NT2H1001
Product data sheet
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Smart advertisement
Goods and device authentication
Call request
Gaming
Call to action
Voucher and coupons
Bluetooth simple pairing
Connection handover
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NTAG 210µ, NFC Forum Type 2 Tag compliant IC
5. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Ci
input capacitance
NT2L1001
-
17.0
-
pF
NT2H1001
-
50.0
-
pF
-
13.56
-
MHz
input frequency
fi
EEPROM characteristics
tret
retention time
Tamb = 22 C
10
-
-
years
Nendu(W)
write endurance
Tamb = 22 C
100000
-
-
cycles
6. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
NT2L1001G0DUF
FFC Bump
8 inch wafer, 75 m thickness, on film frame carrier, electronic fail die
marking according to SECS-II format), Au bumps,
48 bytes user memory, 17 pF input capacitance
-
NT2L1001G0DUD
FFC Bump
8 inch wafer, 120 m thickness, on film frame carrier, electronic fail die
marking according to SECS-II format), Au bumps,
48 bytes user memory, 17 pF input capacitance
-
NT2H1001G0DUF
FFC Bump
8 inch wafer, 75 m thickness, on film frame carrier, electronic fail die
marking according to SECS-II format), Au bumps,
48 bytes user memory, 50 pF input capacitance
-
NT2H1001G0DUD
FFC Bump
8 inch wafer, 120 m thickness, on film frame carrier, electronic fail die
marking according to SECS-II format), Au bumps,
48 bytes user memory, 50 pF input capacitance
-
7. Block diagram
DIGITAL CONTROL UNIT
antenna
RF-INTERFACE
ANTICOLLISION
EEPROM
EEPROM
INTERFACE
COMMAND
INTERPRETER
aaa-006979
Fig 2.
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Block diagram of NT2L1001_NT2H1001
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NTAG 210µ, NFC Forum Type 2 Tag compliant IC
8. Pinning information
8.1 Pinning
The pinning of the NT2L1001_NT2H1001 wafer delivery is shown in section “Bare die
outline” (see Section 15).
Table 3.
Pin allocation table
Pin
Symbol
LA
LA
Antenna connection LA
LB
LB
Antenna connection LB
9. Functional description
9.1 Block description
NTAG 210µ ICs consist of a 64 bytes of EEPROM, RF interface and Digital Control Unit
(DCU). Energy and data are transferred via an antenna consisting of a coil with a few
turns which is directly connected to NTAG 210µ. No further external components are
necessary. Refer to Ref. 4 for details on antenna design.
• RF interface:
– modulator/demodulator
– rectifier
– clock regenerator
– Power-On Reset (POR)
– voltage regulator
• Anticollision: multiple cards may be selected and managed in sequence
• Command interpreter: processes memory access commands supported by the NTAG
210µ
• EEPROM interface
• NTAG 210µ EEPROM: 64 bytes, organized in 16 pages of 4 bytes per page.
– 10 bytes reserved for manufacturer and configuration data
– 16 bits used for the read-only locking mechanism
– 4 bytes available as capability container
– 48 bytes user programmable read/write memory
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NTAG 210µ, NFC Forum Type 2 Tag compliant IC
9.2 RF interface
The RF-interface is based on the ISO/IEC 14443 Type A standard.
During operation, the NFC device generates an RF field. The RF field must always be
present with short pauses for data communication. It is because it is used for both
communication and as power supply for the tag.
For both directions of data communication, there is one start bit at the beginning of each
frame. Each byte is transmitted with an odd parity bit at the end. The LSB of the byte with
the lowest address of the selected block is transmitted first. The maximum length of an
NFC device to tag frame is 163 bits. It comprises 16 data bytes + 2 CRC bytes which
equal 16  9 + 29 + 1 start bit. The maximum length of a frame from a tag to an NFC
device is 307 bits. It comprises 32 data bytes + 2 CRC bytes which equal
32  9 + 2  9 + 1 start bit.
For a multi-byte response, the least significant byte is always transmitted first. As an
example, when reading from the memory using the READ command, byte 0 from the
addressed block is transmitted first. It is then followed by byte 1 to byte 3 from this block.
The same sequence continues for the next block and all subsequent blocks.
9.3 Data integrity
Following mechanisms are implemented in the contactless communication link between
NFC device and NTAG to ensure very reliable data transmission:
•
•
•
•
•
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16 bits CRC per block
parity bits for each byte
bit count checking
bit coding to distinguish between “1”, “0” and “no information”
channel monitoring (protocol sequence and bit stream analysis)
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NTAG 210µ, NFC Forum Type 2 Tag compliant IC
9.4 Communication principle
The NFC device initiates the commands and the Digital Control Unit of the NTAG 210µ,
controls them. The command response is depending on the state of the IC and for
memory operations also on the access conditions valid for the corresponding page.
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Remark: In all states, the command interpreter returns to the idle state on receipt of an unexpected
command. If the IC was previously in the HALT state, it returns to that state.
Fig 3.
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State diagram
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NTAG 210µ, NFC Forum Type 2 Tag compliant IC
9.4.1 IDLE state
After a power-on reset (POR), NTAG 210µ switches to the IDLE state. It only exits this
state when a REQA or a WUPA command is received from the NFC device. Any other
data received while in this state is interpreted as an error and NTAG 210µ remains in the
IDLE state.
After a correctly executed HLTA command out of the ACTIVE state, the default waiting
state changes from the IDLE state to the HALT state. This state can then be exited with a
WUPA command or power-on reset only.
9.4.2 READY1 state
In this state, the NFC device resolves the first part of the UID (3 bytes) using the
ANTICOLLISION or SELECT commands in cascade level 1. This state is correctly exited
after execution of either of the following commands:
• SELECT command from cascade level 1: the NFC device switches NTAG 210µ into
READY2 state where the second part of the UID is resolved.
• READ command (from address 0): all anticollision mechanisms are bypassed and the
NTAG 210µ switches directly to the ACTIVE state.
Remark: If more than one NTAG 210µ is in the NFC device field, a READ command from
address 0 selects all NTAG 210µ devices.
Any other data received in the READY1 state is interpreted as an error and depending on
its previous state NTAG 210µ returns to the IDLE or HALT state.
9.4.3 READY2 state
In this state, NTAG 210µ supports the NFC device in resolving the second part of its UID
(4 bytes) with the cascade level 2 ANTICOLLISION command. This state is usually exited
using the cascade level 2 SELECT command.
Alternatively, READY2 state can be skipped using a READ command (from address 0) as
described for the READY1 state.
Remark: The response of NTAG 210µ to the cascade level 2 SELECT command is the
select acknowledge (SAK) byte. In accordance with ISO/IEC 14443, this byte indicates if
the anticollision cascade procedure has finished. NTAG 210µ is now uniquely selected
and only this device communicates with the NFC device even when other contactless
devices are present in the NFC device field. If more than one NTAG 210µ is in the NFC
device field, a READ command from address 0 selects all NTAG 210µ devices. In this
case, a collision occurs.
Any other data received when the device is in this state is interpreted as an error.
Depending on its previous state, the NTAG 210µ returns to either the IDLE state or HALT
state.
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NTAG 210µ, NFC Forum Type 2 Tag compliant IC
9.4.4 ACTIVE state
All memory operations and other functions like the originality check are operated in the
ACTIVE state.
The ACTIVE state is exited with the HLTA command and upon reception NTAG 210µ
transits to the HALT state.
Any other data received when the device is in this state is interpreted as an error.
Depending on its previous state NTAG 210µ returns to either the IDLE state or HALT
state.
9.4.5 HALT state
HALT and IDLE states constitute the two wait states implemented in NTAG 210µ. An
already processed NTAG 210µ can be set into the HALT state using the HLTA command.
In the anticollision phase, this state helps the NFC device to distinguish between
processed tags and tags yet to be selected. NTAG 210µ can only exit this state on
execution of the WUPA command. Any other data received when the device is in this state
is interpreted as an error and NTAG 210µ state remains unchanged.
9.5 Memory organization
The EEPROM memory is organized in pages with 4 bytes per page. NTAG 210µ has 16
pages in total. The memory organization can be seen in Figure 4, the functionality of the
different memory sections is described in the following sections.
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Fig 4.
Memory organization NTAG 210µ
The structure of manufacturing data, static lock bytes, capability container and user
memory pages are compatible to NTAG 210.
9.5.1 UID/serial number
The unique 7-byte serial number (UID) and its two check bytes are programmed into the
first 9 bytes of memory. It covers page addresses 00h, 01h and the first byte of page 02h.
The second byte of page address 02h is reserved for internal data. These bytes are
programmed and write protected in the production test.
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NTAG 210µ, NFC Forum Type 2 Tag compliant IC
MSB
0
0
byte
0
0
1
2
0
0
1
0
page 0
3
LSB
0 manufacturer ID for NXP Semiconductors (04h)
0
serial number
part 1
1
2
page 1
3
0
serial number
part 2
1
2
page 2
3
check byte 1
internal
check byte 0
lock bytes
001aai001
Fig 5.
UID/serial number
In accordance with ISO/IEC 14443-3, check byte 0 (BCC0) is defined as CT  SN0 
SN1  SN2. Check byte 1 (BCC1) is defined as SN3  SN4  SN5  SN6.
SN0 holds the Manufacturer ID for NXP Semiconductors (04h) in accordance with
ISO/IEC 14443-3.
9.5.2 Static lock bytes
The bits of byte 2 and byte 3 of page 02h represent the field programmable read-only
locking mechanism. Each page from 03h (CC) to 0Fh can be individually locked by setting
the corresponding locking bit Lx to logic 1. This locking prevents further write access and
the corresponding block becomes read-only memory.
The three least significant bits of lock byte 0 are the block-locking bits. Bit 2 deals with
blocks 0Ah to 0Fh, bit 1 deals with blocks 04h to 09h and bit 0 deals with block 03h (CC).
Once the block-locking bits are set, the locking configuration for the corresponding
memory area is frozen.
MSB
L
7
L
6
L
5
L
4
L
CC
BL
15-10
BL
9-4
LSB
MSB
BL
CC
L
15
LSB
L
14
L
13
L
12
L
11
L
10
L
9
L
8
page 2
0
1
2
3
lock byte 0
lock byte 1
Fig 6.
Lx locks page x to read-only
BLx blocks further locking for the memory area x
aaa-006983
Static lock bytes 0 and 1
For example if BL15-10 is set to logic 1, then bits L15 to L10 (lock byte 1, bit[7:2]) can no
longer be changed. A WRITE or COMPATIBILITY_WRITE command to block 02h, sets
the static locking and block-locking bits. Data bytes 2 and 3 of the WRITE or
COMPATIBILITY_WRITE command, and the contents of the lock bytes, are a bit-wise
OR. The result becomes the new content of the lock bytes. This process is irreversible. If
a bit is set to logic 1, it cannot be changed back to logic 0.
The contents of bytes 0 and 1 of block 02h are unaffected by the corresponding data
bytes of the WRITE or COMPATIBILITY_WRITE command.
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NTAG 210µ, NFC Forum Type 2 Tag compliant IC
The default value of the static lock bytes is 00 00h.
Any write operation to the static lock bytes is tearing-proof.
9.5.3 Capability Container (CC bytes)
The Capability Container CC (block 3) is programmed during the IC production according
to the NFC Forum Type 2 Tag specification (see Ref. 2). These bytes may be bit-wise
modified by a WRITE or COMPATIBILITY_WRITE command.
page 3
byte 12
13
14
15
Example NTAG210
default value (initialized state)
11100001
00010000
CC bytes
00000110
00000000
00000000
00001111
CC bytes
write command to page 3
00000000
00000000
result in page 3 (read-only state)
11100001
00010000
00000110
00001111
aaa-006985
This memory area can be used as a 32 tick one-time counter.
Fig 7.
CC bytes
The parameter bytes of the WRITE command and the current contents of the CC bytes
are bit-wise OR’ed. The result is the new CC byte contents. This process is irreversible
and once a bit is set to logic 1, it cannot be changed back to logic 0.
Any write operation to the CC bytes is tearing-proof.
The default values of the CC bytes at delivery are defined in Section 9.5.5.
9.5.4 Data blocks
Blocks 04h to 0Fh for NTAG 210µ are the user memory read/write area.
The default values of the data blocks at delivery are defined in Section 9.5.5.
9.5.5 Memory content at delivery
The capability container in block 03h, and the data blocks 04h and 05h of NTAG 210µ, are
pre-programmed to the initialized state. It is in accordance with the NFC Forum Type 2
Tag specification (see Ref. 2) as defined in Table 4.
Table 4.
Memory content at delivery NTAG 210µ
Block Address
Byte number within block
0
1
2
3
03h
E1h
10h
06h
00h
04h
03h
00h
FEh
00h
05h
00h
00h
00h
00h
Remark: The default content of the data blocks from block 05h onwards is not defined at
delivery.
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NTAG 210µ, NFC Forum Type 2 Tag compliant IC
9.6 Originality signature
The NTAG 210µ offers a feature to verify the origin of a tag confidently, using the UID
toward an originality signature stored in a hidden part of memory. The originality signature
can be read with the READ_SIG command.
The NTAG 210µ provides the possibility to customize the originality signature to
personalize the IC individually for specific application.
At delivery, the NTAG 210µ is pre-programmed with the NXP originality signature
described below. This signature is locked in the dedicated memory. If needed, the
signature can be unlocked with the LOCK_SIG command. It is reprogrammed with a
custom-specific signature using the WRITE_SIG command during the personalization
process by the customer. The signature can be permanently locked afterwards with the
LOCK_SIG command to avoid further modifications.
Remark: If no customized originality signature is required, it is recommended to lock the
NXP signature permanently during the initialization process with the LOCK_SIG
command.
9.6.1 Originality Signature at delivery
At the delivery, the NTAG 210µ is programmed with an NXP digital signature based on
standard Elliptic Curve Cryptography (curve name secp128r1), according to the ECDSA
algorithm. The use of a standard algorithm and curve ensures easy software integration of
the originality check procedure in NFC devices without specific hardware requirements.
Each NTAG 210µ UID is signed with an NXP private key and the resulting 32-byte
signature is stored in a hidden part of the NTAG 210µ memory during IC production.
This signature can be retrieved using the READ_SIG command and verified in the NFC
device by using the corresponding ECC public key provided by NXP. In case the NXP
public key is stored in the NFC device, the complete signature verification procedure can
be performed offline.
To verify the signature, for example with the use of the public domain crypto-library
OpenSSL, the tool domain parameters are set to secp128r1. It is defined within the
standards for elliptic curve cryptography SEC (Ref. 7).
Details on how to check that the NXP signature value is provided in following application
note (Ref. 5). It is foreseen to offer an online and offline way to verify originality of NTAG
210µ.
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10. Command overview
NTAG 210µ activation follows the ISO/IEC 14443 Type A. After NTAG 210µ has been
selected, it can either be deactivated using the ISO/IEC 14443 HLTA command, or the
NTAG 210µ commands (e.g. READ or WRITE) can be performed. For more details about
the card activation, refer to Ref. 1.
10.1 NTAG 210µ command overview
All available commands for NTAG 210µ are shown in Table 5.
Table 5.
Command overview
Command[1]
ISO/IEC 14443
NFC FORUM
Command code
(hexadecimal)
Request
REQA
SENS_REQ
26h (7 bit)
Wake-up
WUPA
ALL_REQ
52h (7 bit)
Anticollision CL1
Anticollision CL1
SDD_REQ CL1
93h 20h
Select CL1
Select CL1
SEL_REQ CL1
93h 70h
Anticollision CL2
Anticollision CL2
SDD_REQ CL2
95h 20h
Select CL2
Select CL2
SEL_REQ CL2
95h 70h
Halt
HLTA
SLP_REQ
50h 00h
GET_VERSION
-
-
60h
READ
-
READ
30h
WRITE
-
WRITE
A2h
COMP_WRITE
-
-
A0h
READ_SIG
-
-
3Ch
WRITE_SIG[2]
-
-
A9h
LOCK_SIG[2]
ACh
[1]
Unless otherwise specified, all commands use the coding and framing as described in Ref. 1.
[2]
This command is new in NTAG 210µ compared to NTAG 210.
10.2 Timings
The command and response timings shown in this document are not to scale and values
are rounded to 1 s.
All given command and response transmission times refer to the data frames including
start of communication and end of communication. An NFC device data frame contains
the start of communication start-bit and the end of communication logic 0 + 1-bit length of
unmodulated carrier. An NFC tag data frame contains the start of communication (1 “start
bit”) and the end of communication (1-bit length of no subcarrier).
The minimum command response time is specified according to Ref. 1 as an integer n
which specifies the NFC device to NFC tag frame delay time. The frame delay time from
NFC tag to NFC device is at least 87 s. The maximum command response time is
specified as a timeout value. Depending on the command, the TACK value specified for
command responses defines the NFC device to NFC tag frame delay time. It does it for
either the 4-bit ACK/NAK value specified in Section 10.3 or for a data frame.
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All command timings are according to ISO/IEC 14443-3 frame specification as shown for
the Frame Delay Time in Figure 8. For more details, refer to Ref. 1.
last data bit transmitted by the NFC device
first modulation of the NFC TAG
FDT = (n* 128 + 84)/fc
128/fc
logic „1“
256/fc
end of communication (E)
128/fc
start of
communication (S)
FDT = (n* 128 + 20)/fc
128/fc
logic „0“
256/fc
end of communication (E)
128/fc
start of
communication (S)
aaa-006986
Fig 8.
Frame Delay Time (from NFC device to NFC tag)
Remark: Due to the coding of commands, the measured timings usually exclude (a part
of) the end of communication. Considered this factor when comparing the specified with
the measured times.
10.3 NTAG 210µ ACK and NAK
NTAG 210µ uses a 4-bit ACK / NAK as shown in Table 6.
Table 6.
ACK and NAK values
Code (4 bit)
ACK/NAK
Ah
Acknowledge (ACK)
0h
NAK for invalid argument (i.e. invalid block address)
1h
NAK for parity or CRC error
5h or 7h
NAK for EEPROM write error
10.4 ATQA and SAK responses
NTAG 210µ replies to a REQA or WUPA command with the ATQA value shown in Table 7.
It replies to a Select CL2 command with the SAK value shown in Table 8. The 2-byte
ATQA value is transmitted with the least significant byte first (44h).
Table 7.
ATQA response of the NTAG 210µ
Bit number
NT2L1001_NT2H1001
Product data sheet
COMPANY PUBLIC
Sales type
Hex value
16 15 14 13 12 11 10 9
8
7
6
5
4
3
2
1
NTAG 210µ
00 44h
0
0
1
0
0
0
1
0
0
0
0
0
0
0
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NTAG 210µ, NFC Forum Type 2 Tag compliant IC
Table 8.
SAK response of the NTAG 210µ
Bit number
Sales type
Hex value
8
7
6
5
4
3
2
1
NTAG 210µ
00h
0
0
0
0
0
0
0
0
Remark: The ATQA coding in bits 7 and 8 indicate the UID size according to
ISO/IEC 14443.
Remark: The bit numbering in the ISO/IEC 14443 starts with LSB = bit 1 and not with
LSB = bit 0. So 1 byte counts bit 1 to bit 8 instead of bit 0 to 7.
11. NTAG 210µ commands
11.1 GET_VERSION
The GET_VERSION command is used to retrieve NTAG21x family information, the
product version, storage size and other product data required to identify the specific
NTAG21x.
This command is also available on all other NTAG21x products to have a common way of
identifying products across platforms and evolution steps.
The GET_VERSION command has no arguments and replies the version information for
the specific NTAG21x type. The command structure is shown in Figure 9 and Table 9.
Table 10 shows the required timing.
NFC device
Cmd
CRC
Data
NTAG ,,ACK''
283 µs
TACK
TNAK
NT2L1001_NT2H1001
Product data sheet
COMPANY PUBLIC
57 µs
TTimeOut
Time out
Table 9.
868 µs
NAK
NTAG ,,NAK''
Fig 9.
CRC
aaa-006987
GET_VERSION command
GET_VERSION command
Name
Code
Description
Length
Cmd
60h
Get product version
1 byte
CRC
-
CRC according to Ref. 1
2 bytes
Data
-
Product version information
8 bytes
NAK
see Table 6
see Section 10.3
4 bit
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Table 10. GET_VERSION timing
These times exclude the end of communication of the NFC device.
TACK/NAK min
GET_VERSION
[1]
n=
9[1]
TACK/NAK max
TTimeOut
TTimeOut
5 ms
Refer to Section 10.2 “Timings”.
Table 11.
GET_VERSION response for NTAG 210µ
Byte no.
Description
NT2L1001
NT2H1001 Interpretation
0
fixed Header
00h
00h
1
vendor ID
04h
04h
NXP Semiconductors
2
product type
04h
04h
NTAG
3
product subtype
01h
02h
17 pF / 50 pF
4
major product version
02h
02h
2
5
minor product version
00h
00h
V0
6
storage size
0Bh
0Bh
see following information
7
protocol type
03h
03h
ISO/IEC 14443-3 compliant
The most significant 7 bits of the storage size byte are interpreted as an unsigned integer
value n. As a result, it codes the total available user memory size as 2n. If the least
significant bit is 0b, the user memory size is exactly 2n. If the least significant bit is 1b, the
user memory size is between 2n and 2n+1.
The user memory for NTAG 210µ is 48 bytes. This memory size is between 32 bytes and
64 bytes. Therefore, the most significant 7 bits of the value 0Bh, are interpreted as 5d and
the least significant bit is 1b.
NT2L1001_NT2H1001
Product data sheet
COMPANY PUBLIC
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11.2 READ
The READ command requires a start block address, and returns the 16 bytes of four
NTAG 210µ blocks. For example, if address (Addr) is 03h then blocks 03h, 04h, 05h, 06h
are returned. Special conditions apply if the READ command address is near the end of
the accessible memory area. For details on those cases and the command structure, refer
to Figure 10 and Table 12.
Table 13 shows the required timing.
NFC device
Cmd
Addr
CRC
Data
NTAG ,,ACK''
TACK
368 µs
CRC
1548 µs
NAK
NTAG ,,NAK''
TNAK
57 µs
TTimeOut
Time out
aaa-006988
Fig 10. READ command
Table 12.
READ command
Name
Code
Description
Length
Cmd
30h
read four blocks
1 byte
Addr
-
start block address
1 byte
2 bytes
CRC
-
CRC according to Ref. 1
Data
-
Data content of the addressed blocks 16 bytes
NAK
see Table 6
see Section 10.3
4 bit
Table 13. READ timing
These times exclude the end of communication of the NFC device.
TACK/NAK min
READ
[1]
n=
9[1]
TACK/NAK max
TTimeOut
TTimeOut
5 ms
Refer to Section 10.2 “Timings”.
Valid memory blocks as Addr parameter to the READ command are
• block address 00h to 0Fh
Addressing a memory block beyond the limits above results in a NAK response from
NTAG 210µ.
A roll-over mechanism is implemented to continue reading from block 00h once the end of
the accessible memory is reached. Reading from address 0Dh on a NTAG 210µ results in
blocks 0Dh, 0Eh, 0Fh and 00h being returned.
NT2L1001_NT2H1001
Product data sheet
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11.3 WRITE
The WRITE command requires a block address, and writes 4 bytes of data into the
addressed NTAG 210µ block. The WRITE command is shown in Figure 11 and Table 14.
Table 15 shows the required timing.
NFC device
Cmd Addr
Data
CRC
ACK
NTAG ,,ACK''
TACK
708 µs
57 µs
NAK
NTAG ,,NAK''
TNAK
57 µs
TTimeOut
Time out
aaa-006990
Fig 11. WRITE command
Table 14.
WRITE command
Name
Code
Description
Length
Cmd
A2h
write one block
1 byte
Addr
-
block address
1 byte
CRC
-
CRC according to Ref. 1
2 bytes
Data
-
data
4 bytes
NAK
see Table 6
see Section 10.3
4 bit
Table 15. WRITE timing
These times exclude the end of communication of the NFC device.
TACK/NAK min
WRITE
[1]
n=
9[1]
TACK/NAK max
TTimeOut
TTimeOut
10 ms
Refer to Section 10.2 “Timings”.
In the initial state of NTAG 210µ, the following memory blocks are valid Addr parameters
to the WRITE command.
• block address 02h to 0Fh for NTAG 210µ
Addressing a memory block beyond the limits above results in a NAK response from
NTAG 210µ. Blocks which are locked against writing cannot be reprogrammed using any
write command. The locking mechanisms also include the static lock bits.
NTAG 210µ features tearing protected write operations to specific memory content. The
following blocks are protected against tearing events during a WRITE operation:
• block 02h containing static lock bits
• block 03h containing CC bits
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Product data sheet
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11.4 COMPATIBILITY_WRITE
The COMPATIBILITY_WRITE command is implemented to guarantee interoperability with
the established MIFARE Classic PCD infrastructure, in case of coexistence of ticketing
and NFC applications. Even though 16 bytes are transferred to NTAG 210µ, only the least
significant 4 bytes (bytes 0 to 3) are written to the specified address. Set all the remaining
bytes, 04h to 0Fh, to logic 00h. The COMPATIBILITY_WRITE command is shown in
Figure 12, Figure 13 and Table 14.
Table 17 shows the required timing.
NFC device
Cmd
Addr
CRC
ACK
NTAG ,,ACK''
368 µs
TACK
59 µs
TNAK
59 µs
NAK
NTAG ,,NAK''
TTimeOut
Time out
aaa-006991
Fig 12. COMPATIBILITY_WRITE command part 1
NFC device
Data
CRC
ACK
NTAG ,,ACK''
1558 µs
TACK
59 µs
NAK
NTAG ,,NAK''
TNAK
59 µs
TTimeOut
Time out
aaa-006992
Fig 13. COMPATIBILITY_WRITE command part 2
Table 16.
NT2L1001_NT2H1001
Product data sheet
COMPANY PUBLIC
COMPATIBILITY_WRITE command
Name
Code
Description
Cmd
A0h
compatibility write
1 byte
Addr
-
block address
1 byte
CRC
-
CRC according to Ref. 1
2 bytes
Data
-
16-byte Data, only least significant 4
bytes are written
16 bytes
NAK
see Table 6
see Section 10.3
4 bit
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Table 17. COMPATIBILITY_WRITE timing
These times exclude the end of communication of the NFC device.
TACK/NAK min
TACK/NAK max
TTimeOut
COMPATIBILITY_WRITE part 1
n=
9[1]
TTimeOut
5 ms
COMPATIBILITY_WRITE part 2
n = 9[1]
TTimeOut
10 ms
[1]
Refer to Section 10.2 “Timings”.
In the initial state of NTAG 210µ, the following memory blocks are valid Addr parameters
to the COMPATIBILITY_WRITE command.
• block address 02h to 0Fh for NTAG 210µ
Addressing a memory block beyond the limits above results in a NAK response from
NTAG 210µ.
Blocks which are locked against writing cannot be reprogrammed using any write
command. The locking mechanisms include the static bits as well.
NTAG 210µ features tearing protected write operations to specific memory content. The
following blocks are protected against tearing events during a COMPATIBILITY_WRITE
operation:
• block 02h containing static lock bits
• block 03h containing CC bits
11.5 READ_SIG
The READ_SIG command returns an IC specific, 32-byte ECC signature. The command
structure is shown in Figure 14 and Table 18.
Table 19 shows the required timing.
NFC device
Cmd
Addr
CRC
Sign
NTAG ,,ACK''
368 µs
TACK
NAK
NTAG ,,NAK''
TNAK
Time out
CRC
2907 µs
57 µs
TTimeOut
aaa-006994
Fig 14. READ_SIG command
NT2L1001_NT2H1001
Product data sheet
COMPANY PUBLIC
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Table 18.
READ_SIG command
Name
Code
Description
Length
Cmd
3Ch
read ECC signature
1 byte
Addr
00h
RFU, is set to 00h
1 byte
CRC
-
CRC according to Ref. 1
2 bytes
Signature
-
ECC signature
32 bytes
NAK
see Table 6
see Section 10.3
4 bit
Table 19. READ_SIG timing
These times exclude the end of communication of the NFC device.
TACK/NAK min
READ_SIG
[1]
n=
9[1]
TACK/NAK max
TTimeOut
TTimeOut
5 ms
Refer to Section 10.2 “Timings”.
Details on how to check that the signature value is provided in the application note
(Ref. 5). It is foreseen to offer an online and offline way to verify originality of NTAG 210µ.
11.6 WRITE_SIG
The WRITE_SIG command allows the writing of a customized originality signature into the
dedicated originality signature memory.
The WRITE_SIG command requires an originality signature block address, and writes 4
bytes of data into the addressed originality signature block. The WRITE_SIG command is
shown in Figure 15 and Table 20.
Table 21 shows the required timing.
NFC device
Cmd Addr
Data
CRC
ACK
NTAG ,,ACK''
708 µs
TACK
57 µs
NAK
NTAG ,,NAK''
TNAK
57 µs
TTimeOut
Time out
aaa-006990
Fig 15. WRITE_SIG command
Table 20.
NT2L1001_NT2H1001
Product data sheet
COMPANY PUBLIC
WRITE_SIG command
Name
Code
Description
Length
Cmd
A9h
write one originality signature block
1 byte
Addr
-
block address
1 byte
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NTAG 210µ, NFC Forum Type 2 Tag compliant IC
Table 20.
WRITE_SIG command
Name
Code
Description
Length
CRC
-
CRC according to Ref. 1
2 bytes
Data
-
signature bytes to be written
4 bytes
NAK
see Table 6
see Section 10.3
4 bit
Table 21. WRITE_SIG timing
These times exclude the end of communication of the NFC device.
WRITE_SIG
[1]
TACK/NAK min
TACK/NAK max
TTimeOut
n = 9[1]
TTimeOut
10 ms
Refer to Section 10.2 “Timings”.
In the initial state of NTAG 210µ, the following originality signature blocks are valid Addr
parameters to the WRITE_SIG command.
• originality signature block address 00h to 07h for NTAG 210µ
Addressing a memory block beyond the limits above results in a NAK response from
NTAG 210µ.
Table 22.
Blocks for the WRITE_SIG command
Originality
signature block
byte 0
byte 1
byte 2
byte 3
00h
MSByte
01h
...
06h
07h
LSByte
11.7 LOCK_SIG
The LOCK_SIG command allows the user to unlock, lock or permanently lock the
dedicated originality signature memory.
The originality signature memory can only be unlocked if the originality signature memory
is not permanently locked.
Permanently locking of the originality signature with the LOCK-SIG command is
irreversible and the originality signature memory can never be unlocked and
reprogrammed again.
The LOCK_SIG command is shown in Figure 16 and Table 23.
Table 24 shows the required timing.
NT2L1001_NT2H1001
Product data sheet
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1)&GHYLFH
&PG
$UJ
&5&
$&.
17$*$&.
7$&.
—V
17$*1$.
—V
1$.
71$.
—V
77LPH2XW
7LPHRXW
/2&.B6,*
DDD
Fig 16. LOCK_SIG command
Table 23.
LOCK_SIG command
Name
Code
Description
Length
Cmd
A9h
lock signature
1 byte
Arg
-
locking action
1 byte
00h - unlock
1 byte
01h - lock
1 byte
02h - permanently lock
1 byte
CRC
-
CRC according to Ref. 1
2 bytes
NAK
see Table 6
see Section 10.3
4 bit
Table 24. LOCK_SIG timing
These times exclude the end of communication of the NFC device.
TACK/NAK min
LOCK_SIG
[1]
NT2L1001_NT2H1001
Product data sheet
COMPANY PUBLIC
n=
9[1]
TACK/NAK max
TTimeOut
TTimeOut
10 ms
Refer to Section 10.2 “Timings”.
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12. Limiting values
Stresses exceeding one or more of the limiting values can permanently damage the
device. Exposure to limiting values for extended periods can affect device reliability.
Table 25. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
II
Conditions
Min
Max
Unit
input current
-
40
mA
Ptot
total power dissipation
-
120
mW
Tstg
storage temperature
55
125
C
Tamb
ambient temperature
25
70
C
2
-
kV
VESD
[1]
electrostatic discharge voltage
on pin LA/LB
[1]
ANSI/ESDA/JEDEC JS-001; Human body model: C = 100 pF, R = 1.5 k
13. Characteristics
Table 26.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Ci
input capacitance
NT2L1001
-
17.0
-
pF
NT2H1001
-
50.0
-
pF
-
13.56
-
MHz
fi
input frequency
EEPROM characteristics
NT2L1001_NT2H1001
Product data sheet
COMPANY PUBLIC
tret
retention time
Tamb = 22 C
10
-
-
year
Nendu(W)
write endurance
Tamb = 22 C
100,000
-
-
cycle
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NTAG 210µ, NFC Forum Type 2 Tag compliant IC
14. Wafer specification
For more details on the wafer delivery forms, see Ref. 5.
Table 27.
Wafer specifications NTAG 210
Wafer
diameter
200 mm typical (8 inches)
maximum diameter after foil expansion
210 mm
thickness
NT2L1001G0DUD
120 m  15 m
NT2L1001G0DUF
75 m  10 m
flatness
not applicable
Potential Good Dies per Wafer (PGDW)
112373
Wafer backside
material
Si
treatment
ground and stress relieve
roughness
Ra max = 0.5 m
Rt max = 5 m
Chip dimensions
x = 528 m
step size[1]
y = 524 m
typical = 20 m
gap between chips[1]
minimum = 5 m
Passivation
type
sandwich structure
material
PSG / nitride
thickness
500 nm / 600 nm
Gold bump (substrate connected to VSS)
material
> 99.9 % pure gold
hardness
35 to 80 HV 0.005
shear strength
> 70 MPa
height
18 m
within a die = 2 m
height uniformity
within a wafer = 3 m
wafer to wafer = 4 m
NT2L1001_NT2H1001
Product data sheet
COMPANY PUBLIC
flatness
minimum = 1.5 m
size
LA, LB, GND, TP[2] = 60 m  60 m
size variation
5 m
under bump metallization
sputtered TiW
[1]
The step size and the gap between chips may vary due to changing foil expansion
[2]
Pads GND and TP are disconnected when wafer is sawn
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14.1 Failed die identification
Electronic wafer mapping covers the electrical test results and additionally the results of
mechanical/visual inspection. No ink dots are applied.
15. Bare die outline
For more details on the wafer delivery forms, see Ref. 6.
Chip Step
X [µm]
y [µm]
528(1)
524(1)
60
60
Bump size
LA, LB, GND,TP
typ. 20.0(1)
min. 5.0
typ. 20.0(1)
min. 5.0
LA
TP
typ. 524.0(1)
442.0
43.0
GND
LB
43.0
Y
466.0
(2)
X
typ. 528.0(1)
aaa-022905
Fig 17. Bare die outline NT2L1001_NT2H1001
NT2L1001_NT2H1001
Product data sheet
COMPANY PUBLIC
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16. Abbreviations
Table 28.
NT2L1001_NT2H1001
Product data sheet
COMPANY PUBLIC
Abbreviations and symbols
Acronym
Description
ACK
Acknowledge
ATQA
Answer to request, type A
CRC
Cyclic Redundancy Check
CC
Capability Container
CT
Cascade Tag (value 88h) as defined in ISO/IEC 14443-3 type A
ECC
Elliptic Curve Cryptography
EEPROM
Electrically Erasable Programmable Read-Only Memory
FDT
Frame Delay Time
FFC
Film Frame Carrier
IC
Integrated Circuit
LSB
Least Significant Bit
NAK
Not acknowledge
NFC device
NFC Forum device
NFC tag
NFC Forum tag
NV
Non-Volatile memory
REQA
Request command, type A
RF
Radio Frequency
RFUI
Reserved for Future Use - Implemented
RMS
Root Mean Square
SAK
Select acknowledge, type A
SECS-II
SEMI Equipment Communications Standard part 2
TiW
Titanium Tungsten
UID
Unique IDentifier
WUPA
Wake-up Protocol type A
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17. References
1.
[1]
ISO/IEC 14443 — International Organization for Standardization
[2]
NFC Forum Tag 2 Type Operation, Technical Specification — NFC Forum,
31.05.2011, Version 1.1
[3]
NFC Data Exchange Format (NDEF), Technical Specification — NFC Forum,
24.07.2006, Version 1.0
[4]
AN11276 NTAG Antenna Design Guide — Application note, BU-ID Document
number 2421**1
[5]
AN11350 NTAG21x Originality Signature Validation — Application note, BU-ID
Document number 2604**
[6]
General specification for 8" wafer on UV-tape; delivery types — Delivery Type
Description, BU-ID Document number 1005**
[7]
Certicom Research. SEC 2 — Recommended Elliptic Curve Domain Parameters,
version 2.0, January 2010
** ... BU ID document version number
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18. Revision history
Table 29.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NT2L1001_NT2H1001 v.3.0
20160907
Product data sheet
-
NT2L1001_NT2H1001 v.2.0
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Corrections and editorial changes made.
NT2L1001_NT2H1001 v.2.0
20160414
Preliminary data sheet
-
NT2L1001_NT2H1001 v.1.0
NT2L1001_NT2H1001 v.1.0
20150903
Objective data sheet
-
-
NT2L1001_NT2H1001
Product data sheet
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19. Legal information
19.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
19.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
19.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
NT2L1001_NT2H1001
Product data sheet
COMPANY PUBLIC
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 3.0 — 7 September 2016
343930
© NXP Semiconductors N.V. 2016. All rights reserved.
30 of 32
NT2L1001_NT2H1001
NXP Semiconductors
NTAG 210µ, NFC Forum Type 2 Tag compliant IC
Bare die — All die are tested on compliance with their related technical
specifications as stated in this data sheet up to the point of wafer sawing and
are handled in accordance with the NXP Semiconductors storage and
transportation conditions. If there are data sheet limits not guaranteed, these
will be separately indicated in the data sheet. There are no post-packing tests
performed on individual die or wafers.
NXP Semiconductors has no control of third party procedures in the sawing,
handling, packing or assembly of the die. Accordingly, NXP Semiconductors
assumes no liability for device functionality or performance of the die or
systems after third party sawing, handling, packing or assembly of the die. It
is the responsibility of the customer to test and qualify their application in
which the die is used.
All die sales are conditioned upon and subject to the customer entering into a
written die sale agreement with NXP Semiconductors through its legal
department.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
19.4 Licenses
Purchase of NXP ICs with NFC technology
Purchase of an NXP Semiconductors IC that complies with one of the Near
Field Communication (NFC) standards ISO/IEC 18092 and ISO/IEC 21481
does not convey an implied license under any patent right infringed by
implementation of any of those standards. Purchase of NXP
Semiconductors IC does not include a license to any NXP patent (or other
IP right) covering combinations of those products with other products,
whether hardware or software.
19.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
NTAG — is a trademark of NXP B.V.
MIFARE — is a trademark of NXP B.V.
20. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
NT2L1001_NT2H1001
Product data sheet
COMPANY PUBLIC
All information provided in this document is subject to legal disclaimers.
Rev. 3.0 — 7 September 2016
343930
© NXP Semiconductors N.V. 2016. All rights reserved.
31 of 32
NT2L1001_NT2H1001
NXP Semiconductors
NTAG 210µ, NFC Forum Type 2 Tag compliant IC
21. Contents
1
2
2.1
2.2
2.3
2.4
2.5
3
3.1
4
5
6
7
8
8.1
9
9.1
9.2
9.3
9.4
9.4.1
9.4.2
9.4.3
9.4.4
9.4.5
9.5
9.5.1
9.5.2
9.5.3
9.5.4
9.5.5
9.6
9.6.1
10
10.1
10.2
10.3
10.4
11
11.1
11.2
11.3
11.4
11.5
11.6
11.7
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . . 1
Contactless energy and data transfer. . . . . . . . 1
Simple deployment and user convenience . . . . 2
Security. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
NFC Forum Tag 2 Type compliance . . . . . . . . . 2
Anticollision. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Features and benefits . . . . . . . . . . . . . . . . . . . . 3
EEPROM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Quick reference data . . . . . . . . . . . . . . . . . . . . . 4
Ordering information . . . . . . . . . . . . . . . . . . . . . 4
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pinning information . . . . . . . . . . . . . . . . . . . . . . 5
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Functional description . . . . . . . . . . . . . . . . . . . 5
Block description . . . . . . . . . . . . . . . . . . . . . . . 5
RF interface . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Data integrity. . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Communication principle . . . . . . . . . . . . . . . . . 7
IDLE state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
READY1 state. . . . . . . . . . . . . . . . . . . . . . . . . . 8
READY2 state. . . . . . . . . . . . . . . . . . . . . . . . . . 8
ACTIVE state . . . . . . . . . . . . . . . . . . . . . . . . . . 9
HALT state . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Memory organization . . . . . . . . . . . . . . . . . . . . 9
UID/serial number. . . . . . . . . . . . . . . . . . . . . . . 9
Static lock bytes . . . . . . . . . . . . . . . . . . . . . . . 10
Capability Container (CC bytes) . . . . . . . . . . . 11
Data blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Memory content at delivery . . . . . . . . . . . . . . 11
Originality signature . . . . . . . . . . . . . . . . . . . . 12
Originality Signature at delivery . . . . . . . . . . . 12
Command overview . . . . . . . . . . . . . . . . . . . . . 13
NTAG 210µ command overview . . . . . . . . . . . 13
Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
NTAG 210µ ACK and NAK . . . . . . . . . . . . . . 14
ATQA and SAK responses . . . . . . . . . . . . . . . 14
NTAG 210µ commands . . . . . . . . . . . . . . . . . . 15
GET_VERSION . . . . . . . . . . . . . . . . . . . . . . . 15
READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
COMPATIBILITY_WRITE . . . . . . . . . . . . . . . . 19
READ_SIG . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
WRITE_SIG . . . . . . . . . . . . . . . . . . . . . . . . . . 21
LOCK_SIG . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
12
13
14
14.1
15
16
17
18
19
19.1
19.2
19.3
19.4
19.5
20
21
Limiting values . . . . . . . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . .
Wafer specification . . . . . . . . . . . . . . . . . . . . .
Failed die identification . . . . . . . . . . . . . . . . .
Bare die outline . . . . . . . . . . . . . . . . . . . . . . . .
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . .
References. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . .
Legal information . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . .
Licenses. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information . . . . . . . . . . . . . . . . . . . .
Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24
24
25
26
26
27
28
29
30
30
30
30
31
31
31
32
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2016.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 7 September 2016
343930