US 20140302655A1
(19) United States
(12) Patent Application Publication (10) Pub. No.: US 2014/0302655 A1
(43) Pub. Date:
(54)
NON-VOLATILE MEMORY DEVICE WITH
VERTICAL MEMORY CELLS AND METHOD
FOR FABRICATING THE SAME
(30)
Foreign Application Priority Data
Aug. 23, 2011
Inventor:
Jung-Ryul AHN, Gyeonggi-do (KR)
(51) 1111.0.
H01L27/115
CPC .............................. .. H01L 27/11578 (2013.01)
USPC
(21) App1.No.: 14/311,003
Filed:
(2006.01)
(52) U.S.Cl.
(73) Assignee: SK hyniX Inc.
(22)
(KR) ...................... .. 10-2011-0084122
Publication Classi?cation
(71) Applicant: SK hyniX Inc., Gyeonggi-do (KR)
(72)
Oct. 9, 2014
........................................................ ..
438/287
ABSTRACT
(57)
A non-volatile memory device includes a plurality of gate
Jun. 20, 2014
electrodes stacked over a semiconductor substrate and
stretched in a ?rst direction along the semiconductor sub
Related US. Application Data
(62)
Division of application No. 13/333,893, ?led on Dec.
21, 2011, noW Pat. No. 8,759,902.
MU /M
202A
strate and a plurality of junction layers having a ?rst region
protruding from the semiconductor substrate and crossing the
gate electrodes and a second region formed between the gate
electrodes.
Patent Application Publication
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US 2014/0302655 A1