Name
MW
20
D4
bp °C/mm (mp)
nD20
TUNGSTEN
Atomic number
Crystal form
74
W
Oxidation states
Body-centered cubic
Atomic weight
0, 2, 3, 4, 5, 6
Electrical resistivity (20˚C)
183.84
Electronegativity, Pauling
4.9 μΩ·cm
CAS number
1.7
Enthalpy of melting
7440-33-7
Specific heat (25˚C)
35 kJ/mol
Boiling point
0.032 cal/g K
Enthalpy of vaporization
5,660˚C
Thermal conductivity (25˚C)
806.7 kJ/mol
Melting point
3,410˚C
Specific gravity (20˚C)
173 W/(m K)
Ionization potential
(spectral)
(aqueous)
7.98 eV (l)
1.074 V (+6)
19.3
COMPOUNDS
C6H 5
INTU022
C6H 5
[1,2-BIS(DIPHENYLPHOSPHINO)ETHANE]TUNGSTEN TETRACARBONYL
C30H24O4P2W
P
W(CO) 4
P
C6H 5
694.32
(206-8)
HYDROLYTIC SENSITIVITY: 4: no reaction with water under neutral conditions
C6H 5
HMIS: 3-1-0-X
[29890-05-9]
5g ¥35,500
AKT890
OC2H 5
C2H 5O
OC2H 5
W
OC 2H 5
C2H 5O
TUNGSTEN(V) ETHOXIDE, 95%
C10H25O5W
Contains WO(OEt)4
Form: dark purple-red liquid
Intermediate for electrochromic coatings by sol-gel
409.15
110-115 / 1
HYDROLYTIC SENSITIVITY: 7: reacts slowly with moisture/water
[26143-11-3]
HMIS: 2-2-1-X
5g ¥16,500
25g ¥52,500
INTU030
TUNGSTEN HEXACARBONYL
C6O6W
Vapor pressure, 67˚: 1.2 torr
351.92
(169-70 dec)
TOXICITY: oral rat, LD50: >5,000 mg/kg
ΔHform: -227 kcal/mole
ΔHsub: 17.2 kcal/mole
Employed in MOCVD of tungsten1 and tungsten nitride2 in ULSI devices.
1. Faltermeier, F. et al. In Advanced Metallization for VLSI Applications , 1992 Cale, T. et al. Eds.
Mater. Res. Soc. 1993.
2. Kelsey, J. et al. J. Vac. Sci. Technol . 1999, B17 , 1101.
CO
OC
OC
W
CO
CO CO
2.65
HYDROLYTIC SENSITIVITY: 4: no reaction with water under neutral conditions
[14040-11-0]
TSCA
EC 237-880-2
HMIS: 2-0-0-X
50g ¥53,300
AKT893
W
O
6
TUNGSTEN(VI) PHENOXIDE
C36H30O6W
Soluble: THF, toluene
[84798-30-1]
747.53
(72-6)
Color: dark red
HMIS: 3-1-1-X
5g ¥16,000
25g ¥50,500
Name
MW
bp °C/mm (mp)
20
D4
nD20
SIT8780.0
[(W 3O 9)4SiO 4]H 4
TUNGSTOSILICIC ACID hydrate
2878.31/3328.69
H4O40SiW 12·26H 2 O / [(SiO4.(W 3O9)4]H4
Solution of 20g + 4g H2O has a density of 2.74
Soluble: water, methanol
Employed in density gradient columns; precipitation of alkaloids.
Anions self-assemble in monolayers on silver surfaces.1
1. Ge, M. et al. J. Am. Chem. Soc. 1996, 118 , 5812.
HYDROLYTIC SENSITIVITY: 0: forms stable aqueous solutions
[12027-38-2]
TSCA
EC 234-719-8
HMIS: 2-0-0-X
シリコンカタログ参照
[W 12 O 40 (OH) 2 ] 10 - trivially
known as paratungstate-B
SIT8787.0
WSi 2
TUNGSTEN SILICIDE
Si2W
ΔHform: 36.9 kcal/mole
ΔHsub: 17.2 kcal/mole
240.02
(2,165)
9.88
Resistivity: 11-13 μΏcm
HYDROLYTIC SENSITIVITY: 2: reacts with aqueous acid
[12039-88-2]
TSCA
EC 234-909-0
HMIS: 1-0-0-X
シリコンカタログ参照
Electrochromic windows with transition between blue and transparent are based on the
reversible oxidation/reduction of thin tungsten oxide films between +5 and +6 states. Switching
range, speed versus temperature characteristics, power consumption when being switched,
durability, and color are all part of design parameters.