Photocoupler
Product Data Sheet
LTV-217-G
(Half Pitch LO Own Brand 1CH Halogen Free Series)
Spec No.: DS70-2009-0016
Effective Date: 09/06/2012
Revision: A
LITE-ON DCC
RELEASE
BNS-OD-FC001/A4
LITE-ON Technology Corp. / Optoelectronics
No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660
http://www.liteon.com/opto
LITE - O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
FEATURES
* Current transfer ratio
( CTR : MIN. 50% at IF = 5mA, VCE = 5V )
* Isolation voltage between input and output LTV-217 Series
( Viso = 3.75 KVrms )
* Employs double transfer mold technology
* Safety Approval
UL, cUL, CSA, FIMKO, VDE* Approved
(*Requires “V” ordering option)
* RoHS compliance
APPLICATIONS
* Hybrid substrates that require high density mounting.
* Programmable controllers
* System appliances, measuring instruments
Part No. LTV-217-G Series (Rev.-, July 16, 2012)
BNS-OD-C131/A4
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OUTLINE DIMENSIONS
LTV-217-G:
*1. 3-digit date code.
*2. Rank shall be or shall not be marked.
*3. VDE mark, only appears on devices ordered “V” option.
Part No. : LTV-217-G Series (Rev.-, July 16, 2012)
BNS-OD-C131/A4
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TAPING DIMENSIONS
LTV-217
LTV-217-TP1
Sym bol
D e s c r ip t io n
T a p e w id e
W
P it c h o f s p r o c k e t h o le s
P0
D im e n s io n in m m ( in c h e s )
F
D is t a n c e o f c o m p a r t m e n t
P2
D is t a n c e o f c o m p a r t m e n t t o c o m p a r t m e n t
P1
Sym bol
D e s c r ip t io n
T a p e w id e
W
P it c h o f s p r o c k e t h o le s
P0
D im e n s io n in m m ( in c h e s )
F
D is t a n c e o f c o m p a r t m e n t
P2
D is t a n c e o f c o m p a r t m e n t t o c o m p a r t m e n t
P1
Quantities per Reel :
Package Type
LTV-217
Quantities (pcs)
3000
Part No. : LTV-217-G Series (Rev.-, July 16, 2012)
BNS-OD-C131/A4
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ABSOLUTE MAXIMUM RATING
( Ta = 25C )
SYMBOL
RATING
UNIT
Forward Current
IF
50
mA
Reverse Voltage
VR
6
V
Power Dissipation
P
70
mW
Collector - Emitter Voltage
VCEO
70
V
Emitter - Collector Voltage
VECO
7
V
Collector Current
IC
50
mA
Collector Power Dissipation
PC
150
mW
Ptot
200
mW
Viso
3000
Vrms
Operating Temperature
Topr
-55 ~ +110
C
Storage Temperature
Tstg
-55 ~ +150
C
Tsol
260 (10s)
C
PARAMETER
INPUT
OUTPUT
Total Power Dissipation
*1 Isolation Voltage
*2 Soldering Temperature
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : LTV-217-G Series (Rev.-, July 16, 2012)
BNS-OD-C131/A4
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ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25C )
PARAMETER
INPUT
OUTPUT
*1 CTR 
IC
CONDITIONS
Forward Voltage
VF
—
1.2
1.4
V
IF=20mA
Reverse Current
IR
—
—
10
A
VR=4V
Terminal Capacitance
Ct
—
30
250
pF
V=0, f=1KHz
Collector Dark Current
ICEO
—
—
100
nA
VCE=50V, IF=0
Collector-Emitter
Breakdown Voltage
BVCEO
80
—
—
V
IC=0.1mA
IF=0
Emitter-Collector
Breakdown Voltage
BVECO
7
—
—
V
IE=10A
IF=0
IC
2.5
—
30
mA
*1 Current Transfer Ratio
CTR
50
—
600
%
Collector-Emitter
Saturation Voltage
VCE(sat)
—
—
0.4
V
IF=8mA
IC=2.4mA
Isolation Resistance
Riso
—

DC500V
40 ~ 60% R.H.
Floating Capacitance
Cf
—
0.6
1
pF
V=0, f=1MHz
Response Time (Rise)
tr
—
2
18
s
Response Time (Fall)
tf
—
3
18
s
Turn-On Time
ton
3
s
Turn-Off Time
toff
3
s
Collector Current
TRANSFER
CHARACTERISTICS
SYMBOL MIN. TYP. MAX. UNIT
51010 11011
IF=5mA
VCE=5V
VCE=10V, IC=2mA
RL=100, f=100Hz
 100%
IF
Part No. : LTV-217-G Series (Rev.-, July 16, 2012)
BNS-OD-C131/A4
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RANK TABLE OF CURRENT TRANSFER RATIO CTR
MODEL NO.
LTV-217
RANK MARK
CTR ( % )
A
80 ~ 160
B
130 ~ 260
C
200 ~ 400
D
300 ~ 600
A or B or C or D or No mark
50 ~ 600
IF = 5 mA
CONDITIONS
VCE = 5 V
Ta = 25 C
Part No. : LTV-217-G Series (Rev.-, July 16, 2012)
BNS-OD-C131/A4
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CHARACTERISTICS CURVES
Figure 1. Collector Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
60
Forward Current, IF (mA)
50
40
30
20
10
0
-25
0
25
50
75
100
Ambient Temperature,Ta (℃)
Figure 3. Forward Current vs. Forward Voltage
-3.2
Forward Voltage Temperature Coeffcient
△VF / △Ta (mV/oC)
Forward Current, IF ( mA )
100
30oC
50oC
0 oC
75oC
o
25 C
Ta=100oC
10
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Figure 4. Forward Voltage Temperature Coefficient vs.
Forward Current
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
2.0
0.1
1
10
100
Forward Current, IF (mA)
Forward Voltage,VF ( V )
Figure 6. Pulse Forward Current vs. Pulse Forward
Voltage
Figure 5. Pulse Forward Current vs. Duty Cycle Ratio
1000
10000
P u ls e w id th < = 1 0 0
s
o
Pulse Forward Current, IFP ( mA )
P u ls e F o rw a rd C u rre n t I F P(m A )
Ta = 2 5 C
1000
100
100
10
Pulse Widths ≦ 10 us
Repetitive Frequency
= 100Hz
Ta = 25 ℃
1
10
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
D u ty R a tio
Part No. : LTV-217-G Series (Rev.-, July 16, 2012)
BNS-OD-C131/A4
0.5
1
1.5
2
2.5
3
Pulse Forward Voltage, VFP(V )
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CHARACTERISTICS CURVES
Figure 7. Collector-Emitter Saturation Voltage vs. Forward
Current
Figure 8. Collector Current vs. Collector-Emitter Voltage
50
5
50mA
Collector Currrent, Ic ( mA)
4
3.5
7mA
10mA
0.5mA
2.5
5mA
3
3mA
1mA
Collect-Emitt Voltage, VCE (V)
4.5
2
1.5
1
40
30mA
20mA
30
PC(Max)=150mV
20
10mA
10
IF=5mA
0.5
0
0
0
2
4
6
8
10
12
14
16
18
0
20
5
10
Collector-Emitter Voltage, VCE ( V )
Forward Current, IF (mA)
Figure 9. Collector Current vs. Small Collector-Emitter
Voltage
Figure 10. Collector Current vs. Forward Curent
0.1
50
10V
5V
50mA
40
Collector Current, Ic (A)
Collector Currrent, Ic ( mA)
45
35
30mA
30
25
20mA
20
10mA
15
10
Vcc = 0.4V
0.01
0.001
5mA
5
IF=2mA
0
0
0.5
1
0.0001
0.0001
Collector-Emitter Voltage, VCE ( V )
0.001
0.01
0.1
Forward Current, IF(A)
Figure 11. Collector Dark Current vs. Ambient Temperature
Figure 12. Current Transfer Ratio vs. Forward
Current
1.00E-06
VCE= 48V
1.00E-08
24V
10V
5V
Current Tranfer Ratio CTR (%)
Collector Dark Current, ICEO(A)
1000
10V
5V
100
1.00E-10
-25
-5
15
35
55
75
95
O
Ambient Temperature, Ta( C)
Part No. : LTV-217-G Series (Rev.-, July 16, 2012)
BNS-OD-C131/A4
Vcc=0.4V
10
0.0001
0.001
0.01
0.1
Forward Current, IF (A)
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CHARACTERISTICS CURVES
Figure 13. Collector-Emitter Saturation Voltage vs. Ambient
Temperature
Figure 14. Collector Current vs. Ambient Temperature
100
0.16
0.14
Collector Current, IC ( mA )
Collector-Emitter Saturation Voltage (V)
0.18
IF=8mA
IC=2.4mA
0.12
0.10
IF=20mA
IC=1mA
0.08
IF=1mA
IC=0.2mA
0.06
0.04
25mA
20mA
10
5mA
1mA
1
IF=0.5mA
0.02
0.00
-30
5
40
75
0.1
110
-25
0
Ambinet Temperature, Ta (oC)
25
50
75
100
Ambient Temperature,Ta ( OC )
Figure 15. Switching Time vs. Load Resistance
Figure 16. Switching Time vs. Ambient Temperature
100
TOFF
1000
Tof f
TS
Switching Time, t(us)
Switching Time ( μS )
100
Ts
10
Ton
1
10
TON
1
T a = 25 ℃
Vcc = 5V
RL = 1.9kΩ
Vcc=5V
IF=16mA
RL=1.9kΩ
0.1
0.1
1
10
100
-20
0
20
40
60
80
100
O
Load Resistance, R L( KΩ)
Ambient Temperature Ta( C)
Figure 17. Frequency Response
0
RL=100Ω
VO ( db )
-2
1KΩ
-4
-6
Vcc=5V
Ic=2mA
o
Ta=25 C
-8
1
10
Frequency ( kHz )
100
Part No. : LTV-217-G Series (Rev.-, July 16, 2012)
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SWITCHING TIME TEST CIRCUIT
TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time
profile shown below.
1. Wave solder
- 260˚C / 10 sec.
2. IR Reflow
Profile item
Preheat
- Temperature Min (TSmin)
- Temperature Max (TSmax)
- Time (min to max) (ts)
Soldering zone
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Ramp-down rate
Conditions
150˚C
180˚C
90±30˚C
250˚C
10~15 sec
260˚C
3~6˚C / sec
Tp
T e m p e r a tu r e ( C )
TL
Tsm ax
R a m p -d o w n
T s m in
25 C
ts ( P r e h e a t)
tL S o ld e r in g z o n e
T im e ( s e c )
Part No. : LTV-217-G Series (Rev.-, July 16, 2012)
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TEMPERATURE PROFILE OF SOLDERING REFLOW
(2) When using another soldering method such as infrared ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1)
(3) When using another soldering method such as infrared ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1)
Notes:
- Lite-On is continually improving the quality, reliability, function or design and
Lite-On reserves the right to make changes without further notices.
- The products shown in this publication are designed for the general use in electronic
applications such as office automation equipment, communications devices,
audio/visual equipment, electrical application and instrumentation.
- For equipment/devices where high reliability or safety is required, such as space
applications, nuclear power control equipment, medical equipment, etc, please
contact our sales representatives.
- When requiring a device for any ”specific” application, please contact our sales in
advice.
- If there are any questions about the contents of this publication, please contact us at
your convenience.
- The contents described herein are subject to change without prior notice.
- Immerge unit’s body in solder paste is not recommended.
Part No. : LTV-217-G Series (Rev.-, July 16, 2012)
BNS-OD-C131/A4
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