TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
Introduction
Technical Note
Migrating from Macronix MX29GL-G/F and MX68GL-G Devices to
MT28EW NOR Flash Devices
Introduction
This technical note describes the process for converting a system design for the Macronix® MX29GL-G/F and MX68GL-G devices to a system design for the MT28EW parallel
NOR Flash devices, 128Mb, 256Mb, 512Mb, and 1Gb densities.
MT28EW high reliability and performance are ensured through advanced technology
and product design improvements. MT28EW features a large buffer size of up to 512
words for advanced program performance. Erase performance is improved to meet all
variable system design considerations. And MT28EW supports both x8 and x16 data bus
for legacy controller compatibility.
This document was written using device information available at publication time. In
case of inconsistency, information contained in the relevant MT28EW data sheet supersedes the information in this technical note.
Generally, the Macronix MX68GL-G/F and MX29GL-G devices include similar functionality, and their specific differences are not addressed here. Also this technical note does
not provide detailed MT28EW device information. The standard density-specific
MT28EW device data sheet provides a complete description of device functionality, operating modes, and specifications.
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron's production data sheet specifications. All
information discussed herein is provided on an "as is" basis, without warranties of any kind.
TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
Comparative Overview
Comparative Overview
The MT28EW device, featuring high program and erase performance, is compatible
with the MX29GL-G/F 128Mb, 256Mb, and 512Mb devices. Micron supports a monolithic 1Gb device while Macronix MX68GL supports a stacked 512Mb/512Mb device.
To integrate line items on a variety of customer applications, this document combines
presentation of the MT28EW device speed and voltage options.
Table 1: Part Number Comparison
Part Number
Density
Package Type
Micron
Macronix
1Gb
56-pin TSOP (14mm x 20mm)
MT28EW01GABA1HJS-0SIT
MX68GL1G0GHT2I-10G
MX68GL1G0GUT2I-11G
MT28EW01GABA1LJS-0SIT
MX68GL1G0GLT2I-10G
MX68GL1G0GDT2I-11G
64-ball LBGA (11mm x 13mm)
MT28EW01GABA1HPC-0SIT
MX68GL1G0GHXFI-10G
MX68GL1G0GUXFI-11G
MT28EW01GABA1LPC-0SIT
MX68GL1G0GLXFI-10G
MX68GL1G0GDXFI-11G
512Mb
56-pin TSOP (14mm x 20mm)
MT28EW512ABA1HJS-0SIT
MX29GL512GHT2I-10G
MX29GL512GUT2I-11G
MT28EW512ABA1LJS-0SIT
MX29GL512GLT2I-10G
MX29GL512GDT2I-11G
64-ball LBGA (11mm x 13mm)
MT28EW512ABA1HPC-0SIT
MX29GL512GHXFI-10G
MX29GL512GUXFI-11G
MT28EW512ABA1LPC-0SIT
MX29GL512GLXFI-10G
MX29GL512GDXFI-11G
256Mb
56-pin TSOP (14mm x 20mm)
MT28EW256ABA1HJS-0SIT
MX29GL256FHT2I-90Q
MX29GL256FUT2I-11G
MT28EW256ABA1LJS-0SIT
MX29GL256FLT2I-90Q
MX29GL256FDT2I-11G
64-ball LBGA (11mm x 13mm)
MT28EW256ABA1HPC-0SIT
MX29GL256FHXFI-90Q
MX29GL256FUXFI-11G
MT28EW256ABA1LPC-0SIT
MX29GL256FLXFI-90Q
MX29GL256FDXFI-11G
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
Comparative Overview
Table 1: Part Number Comparison (Continued)
Part Number
Density
Package Type
Micron
Macronix
128Mb
56-pin TSOP (14mm x 20mm)
MT28EW128ABA1HJS-0SIT
MX29GL128FHT2I-70G
MX29GL128FHT2I-90G
MX29GL128FUT2I-90G
MX29GL128FUT2I-11G
64-ball LBGA (11mm x 13mm)
MT28EW128ABA1LJS-0SIT
MX29GL128FLT2I-70G
MT28EW128ABA1HPC-0SIT
MX29GL128FHXFI-70G
MX29GL128FHXFI-90G
MX29GL128FUXFI-11G
MT28EW128ABA1LPC-0SIT
MX29GL128FLXFI-70G
MX29GL128FLXFI-90G
MX29GL128FDXFI-11G
Note:
1. For valid combination details, refer to www.micron.com/products, or contact Micron
sales.
Micron MT28EW and Macronix MX29GL-G/F device features are compatible. The
MT28EW device provides a larger read page size and program buffer size, but no software updates are required during migration. However, software updates that leverage
these MT28EW features can yield improved read performance. To configure MT28EW
device software, query CFI word address 4Ch (x16) or 98h (x16) for larger read page size;
query CFI word address 2Ah (x16) or 54h (x8) for larger program buffer size option, in
either x8 or x16 mode.
Table 2: Feature Comparison
Feature
MT28EW
MX29GL-G
MX29GL-F
Process
45nm
55nm
75nm
Density
128Mb
–
128Mb
256Mb
–
256Mb
512Mb
512Mb
–
1Gb
512Mb/512Mb stack
–
64-ball LBGA (11mm x
13mm)
64-ball LBGA (11mm x
13mm)
64-ball LBGA (11mm x
13mm)
56-pin TSOP (14mm x
20mm)
56-pin TSOP (14mm x
20mm)
56-pin TSOP (14mm x
20mm)
–
–
56-ball FBGA (7mm x 9mm)
Block architecture
Uniform 128KB
Uniform 128KB
Uniform 128KB
Data bus
x8 and x16
x8 and x16
x8 and x16
Package
MFG ID
89h
C2h
C2h
Page read size
16 words
16 words
8 words
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
3
Notes
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
Comparative Overview
Table 2: Feature Comparison (Continued)
Feature
MT28EW
MX29GL-G
MX29GL-F
Program write buffer size
256-byte (x8)
–
–
512-word (x16)
256-word (x16)
32-word (x16)
Extended memory block
128 words (8 + 120)
512 words (256 + 256)
128 words (8 + 120)
CFI version
Revision 1.3
Revision 1.5
Revision 1.3
CFI table area
10h~50h
10h~79h
10h~50h
VCC
2.7V to 3.6V
2.7V to 3.6V
2.7V to 3.6V
VCCQ
1.65~VCC
1.65~VCC
1.65~VCC
Notes
Accelerated voltage
8.5V~9.5V
9.5V~10.5V
9.5V~10.5V
Hardware protection
Yes
Yes
Yes
Individual block write protection
Yes
Yes
Yes
Multiblock erase
Yes
No
Yes
Status polling
Data polling
Dat polling and status register
Data polling
Unlock bypass
Yes
No
No
Chip erase
Yes
Yes
Yes
Blank check
Yes
Yes
No
3
CRC
Yes
No
No
3
Notes:
2
1. Contact Micron sales for detailed information.
2. To prevent damaging the device, designs applying VPP/WP# voltages higher than 9.5V
(MAX) should be modified. VPP/WP# should not remain at VPPH for more than 80 hours
cumulative.
3. Refer to the data sheet for detailed BLANK CHECK command sets.
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
Hardware and Mechanical Considerations
Hardware and Mechanical Considerations
Packages and Ballouts
The MT28EW device is available in 56-pin TSOP and 64-ball LBGA packages, both RoHS
compliant and halogen-free. MT28EW pin and ball assignments and package physical
dimensions are compatible with MX29GL-G/F and MX68GL-G pin and ball assignments and packages.
Input/Output Capacitance
Table 3: Input/Output Capacitance Comparison
MX29GL-G (512Mb)
MX29GL-F (256Mb)
Parameter
Min
MT28EW
Max
Min
Max
Min
Max
Unit
CIN
3
11
-
18
-
17
pF
COUT
3
7
-
14
-
12
pF
Power Supply Decoupling
Flash memory devices require careful power supply decoupling. This prevents external
transient noise from affecting its operations and internally generated transient noise
from affecting other devices in the system.
Ceramic chip capacitors of 0.01μF to 0.1μF should be used between each V CC, V CCQ, and
VPP supply connection or system ground pin. These high-frequency, inherently low-inductance capacitors should be placed either as close as possible to the device package,
or on the opposite side of the printed circuit board (PCB), near the center of the device
package footprint.
Larger electrolytic or tantalum bulk capacitors (4.7μF to 33.0μF) should also be distributed as needed throughout the system to compensate for voltage sags and surges
caused by circuit trace inductance.
Transient current magnitudes depend on the capacitive and inductive loading on the
device’s outputs. For best signal integrity and device performance, high-speed design
rules should be used when designing the PCB. Final signal reflections (overshoot and
undershoot) may vary by each system.
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
Software Considerations
Software Considerations
Command Set
MT28EW command sets are compatible with those of the MX29GL-G/F device except
for the ENTER/CLEAR STATUS REGISTER commands (70h/71h) and the specific PROGRAM SUSPEND/RESUME commands (51h/50h) supported by MX29GL-G.
Common commands, B0h/30h for ERASE SUSPEND/ RESUME and PROGRAM SUSPEND/ RESUME, are supported by Micron and Macronix parts. In addition, both Micron and Macronix parts support the basic data polling method. Therefore, most system
designs will not need software modifications.
Manufacturer ID and Auto Select Comparison
MT28EW device ID (base +01h/0Eh/0Fh) and block protection (block address +02h) are
fully compatible with those of the MX29GL-G/F device. The MT28EW manufacturer ID
and protection register indicator are different from the MX29GL-G ID and indicator, but
the same as the MX29GL-F ID and indicator. System design software modifications
should be very limited.
To obtain the device ID of the secure version of MT28EW, contact your local Micron
sales offices for the Security Addendum.
Table 4: Auto Select Comparison – Word Mode
Description
Manufacturer ID
Address
MT28EW
MX29GL-G
MX29GL-F
(Base) + 00h
0089h
00C2h
00C2h
0099h
Register might differ by
configuration
0019h
Protection register indicator
(VPP/WP# locks highest block)
Factory locked
Factory unlocked
0019h
Protection register indicator
(VPP/WP# locks lowest block)
Factory locked
0089h
Factory unlocked
0009h
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
(Base) + 03h
6
Register might differ by
configuration
0099h
0089h
0009h
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
Software Considerations
CFI Comparison
MT28EW and MX29GL-G/F CFI differences exist because of the different device performance characteristics.
Table 5: CFI Comparison
Address
(x16)
Description
1Dh
VPPH (programming) supply minimum
MT28EW MX29GL-G MX29GL-F Notes
Bits[7:4] hex value in
volts
0085
0000
0000
–
0095
0000
0000
–
0005
0005
0003
–
Bits[3:0] BCD value in
100mV
1Eh
VPPH (programming) supply maximum
PROGRAM/ERASE voltage
Bits[7:4] hex value in
volts
Bits[3:0] BCD value in
100mV
1Fh
Typical timeout for single byte/word PROGRAM = 2nµs
2nµs
20h
Typical timeout for maximum size BUFFER PROGRAM =
0009
0009
0006
–
21h
Typical timeout for individual BLOCK ERASE = 2nms
0008
0008
0009
–
22h
Typical timeout for full-chip ERASE =
2nms
128Mb
000F
–
0013
256Mb
0010
–
0013
512Mb
0011
0011
–
1Gb
0012
0012
–
0003
0003
0003
–
2n
23h
Maximum timeout for byte/word PROGRAM =
timeout
times typical
24h
Maximum timeout for BUFFER PROGRAM = 2n times typical
timeout
0002
0002
0005
–
25h
Maximum timeout per individual BLOCK ERASE = 2n times typical
timeout
0003
0003
0003
–
26h
Maximum timeout for chip ERASE = 2n times typical timeout
0003
0001
0002
–
2Ah
Maximum number of bytes in multiplebyte write = 2n
x8 mode
08
0009
0006
2
x16 mode
000A
43h
Major version number, ASCII
0031
0031
0031
–
44h
Minor version number, ASCII
0033
0035
0033
–
45h
Address sensitive unlock bits
001C
001C
0014
–
0003
0003
0002
–
Bits[1:0]
0 = Required
1 = Not required
4Ch
Silicon revision number bits
Bits[7:2]
Page mode
00 = Not supported
01 = 4-word page
02 = 8-word page
03 = 16-word page
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
Software Considerations
Table 5: CFI Comparison (Continued)
Address
(x16)
Description
4Dh
MT28EW MX29GL-G MX29GL-F Notes
VPPH supply minimum PROGRAM/ERASE Bits[7:4] hex value in
voltage
volts
0085
0095
0095
–
0095
00A5
00A5
–
Bits[3:0] BCD value in
100mV
4Eh
VPPH supply maximum PROGRAM/ERASE Bits[7:4] hex value in
voltage
volts
Bits[3:0] BCD value in
100mV
Notes:
1. On MT28EW, the query result from 2Ah is modulated by BYTE# status for x8 and x16
modes, and designs can query the address to get the proper maximum buffer size.
2. Macronix MX29GL-G version includes an extra CFI space 51h~79H with additional information.
Extended Memory Block and Lock Register Bits
MT28EW and MX29GL-F extended memory blocks are fully compatible (8 words + 120
words). However, the MX29GL-G memory block is different (256 words + 256 word).
MT28EW and MX29GL-F lock register bits definitions are the same. But MX29GL-G lock
register bits DQ6 and DQ0 are different.
MT28EW nonvolatile protection provides the same function as the MX29GL-G/F solid
protection. The MT28EW extended memory block is equivalent to the MX29GL-G/F secure silicon sector.
Table 6: Lock Register Bits – Word Mode
Address
MT28EW
MX29GL-G
MX29GL-F
DQ[15:7]
Reserved
Reserved
Reserved
DQ6
Reserved
Security sector customer lock bit
Reserved
DQ[5:3}
Reserved
Reserved
Reserved
DQ2
Password protection mode lock bit Password protection mode lock bit Password protection mode lock bit
DQ1
Nonvolatile protection mode lock
bit
Solid protection mode lock bit
Solid protection mode lock bit
DQ0
Extended memory protection
mode lock bit
Security sector factory lock bit
Secured silicon sector protection
bit
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
Performance Comparison
Performance Comparison
Shown here are key specification differences between MT28EW and MX29GL-G/F. All
data sheet parameters should be confirmed using a real application to ensure a successful conversion from MX29GL-G/F to MT28EW. MT28EW features significantly improved
program and erase performance. Since program and erase currents are effectively the
same for the Micron and Macronix devices, the faster program and erase times of the
Micron device can provide a proportional energy reduction.
Table 7: Program and Erase Performance Comparison (Word Mode)
MT28EW
Parameter
Typ
MX29GL-G
MX29GL-F
Max
Typ
Max
Typ
Max
Block Erase
Block erase
200
1100
250
1400
500
3500
ms
Erase timeout
50
–
–
–
50
–
µs
Erase suspend latency time
–
20
–
30
–
–
µs
Program suspend latency time
–
15
–
30
–
–
100
–
400
–
–
–
Single word
25
200
30
230
10
180
Write-to-buffer (256 words)
285
1500
284
–
–
–
Write-to-buffer (512 words)
512
2000
–
–
–
–
3.2
–
10
–
–
–
Program/Erase Suspend
Erase/program or suspend to next
resume (tRES) 1
Program
µs
Blank Check
Blank check: main block
Note:
ms
1. This typical value allows an ERASE operation to progress to completion. It is important
to note that the algorithm might never finish if the ERASE operation is always suspended less than this specification.
Table 8: Read AC Performance Comparison – 3V
Symbol
Parameter
MT28EW
MX29GL-G
MX29GL-F
Legacy
JEDEC
Min
Max
Min
Max
Min
Max
Address valid to output valid
tACC
tAVQV
–
95/70
–
100/110
–
70/90
ns
Page address access
tAPA
–
–
20
–
15
–
25
ns
tOE
tGLQV
–
25
–
25
–
25
ns
OE# LOW to output valid
Note:
Unit Notes
1
1. For MT28EW, 70ns spec is available only for 128Mb/256Mb.
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
9
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
Power-on and Reset Timings
Table 9: Power Consumption Comparison
MT28EW
Parameter
MX29GL-G
MX29GL-F
Symbol
Typ
Max
Typ
Max
Typ
Max
Unit
VCC random read current (5Mhz)
ICC1
26
31
12
30/35
10
20
mA
VCC page read current 1
ICC1
12
16
8
15
1.5
5
ICC2
Read
Standby
VCC standby
current
1Gb
75
165
40
180
–
–
512Mb
70
150
20
90
–
–
µA
256Mb
65
135
–
–
14
30
128Mb
50
120
–
–
20
50
35
50
35
55
35
50
Program/Erase
VCC erase/program current
ICC3
mA
1. The page read current spec is based on different read cycles, 13Mhz for MT28EW, 10Mhz
for MX29GL-G/F. It also applies to different densities, all densities for MT28EW, 1Gb for
MX29GL-G, 256Mb for MX29GL-F.
Note:
Power-on and Reset Timings
Because many of the more common processors support the MT28EW timings, there
should be no adverse effect from timing differences.
Table 10: Reset Timing Comparison
Symbol
Condition/Parameter
MX29GL-G
MX29GL-F
JEDEC
Min
Max
Min
Max
Min
Max
Unit
VCC power valid to RST# HIGH
tVCS
tVCHPH
300
–
500
–
500
–
µs
RST# LOW to read mode during program or erase
tREADY
tPLRH
–
25
–
30
–
20
µs
RST# pulse width
tRP
tPLPH
100
–
200ns/
10µs
–
500ns/
10µs
–
ns
RST# HIGH to CE# LOW, OE#
LOW
tRH
tPHEL,
50
–
50
–
200
–
ns
2.0
–
2.3
–
2.3
–
V
Low VCC lock-out voltage
Legacy
MT28EW
tPHGL
VLKO
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
–
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
System Validation
System Validation
Because Linux is a widely used operating system in embedded applications, a systemlevel validation with the following environmental factors is performed on each
MT28EW device density.
•
•
•
•
ARM9, 3.3V, x16 I/O, CPU: 202.8 MHz
Memory bus clock: 101.4 MHz
Linux version: 2.6.22 and 3.11.6, HZ = 200
File system: JFFS2 and UBIFS
MTD Validation
The basic functions and stress tests applied by the Linux MTD driver have been performed with Linux test project (LTP) utility. It demonstrates robust compatibility and
good performance.
Table 11: Typical Write Speed Comparison
Size
MT28EW
MX29GL-F
Unit
10KB
1.9
1.3
MB/s
100KB
2.3
1.5
1MB
2.4
1.5
4MB
2.4
1.5
Notes:
1. Speed is measured through the function that time dd if = /dev/zero of = /dev/mtd0 bs =
1k count = 10/100/1000/4000 conv = sync. The performance is subject to change by different system application.
2. The typical data is measured on limited samples. MTD driver includes a typical delay
time probed from CFI 1Fh (x16) after the Flash WRITE operation is initiated.
Table 12: Typical Format Speed Comparison
Format
JFFS2
Blank Flash
100% Dirty Flash
UBIFS
Blank Flash
100% Dirty Flash
Notes:
Size
MT28EW
MX29GL-F
Unit
16MB
17.3
63.3
s
32MB
34.6
125.6
16MB
19.6
64.2
32MB
37.1
127.5
16MB
17.9
62.9
32MB
34.7
125.8
16MB
19.8
63.2
32MB
37.3
127.4
1. Speed is measured through the function that time flash_eraseall –jq /dev/mtd0;time ubiformat –yq /dev/mtd0. The system performance is subject to change by different system
application.
2. The typical data is measured on limited samples. MTD driver includes a typical delay
time after the Flash ERASE operation is initiated; that is, half of the time-value probed
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
System Validation
from CFI 21h (x16). It mediates the performance advantage of MT28EW on blank Flash
formatting.
File System Validation
All file operations including READ, WRITE, and DELETE, and all partition operations including FORMAT, MOUNT, and UNMOUNT have been validated on both the JFFS2 and
the UBIFS file system.
Stress Tests
Stress reliability test is performed to validate the power loss cycling more than 40,000
times on both chip level and system level. The ERASE SUSPEND operation is stressed
up to 40,000 cycles. All subsequent READ, WORD PROGRAM, and BUFFER PROGRAM
operations after an ERASE SUSPEND command work successfully.
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
Related Information
Related Information
Table 13: Document List
Document/Tool
Parallel NOR Flash Embedded Memory MT28EW datasheet (all densities)
Macronix MX29GL512G/MX68GL1G0G datasheet rev 1.0
Macronix MX29GL256F rev1.5/MX29GL128F 1.4 datasheet
Application Note 309046: Power Loss Recovery for NOR Flash Memory
TN-13-30: System Design Considerations with Micron Flash Memory
Notes:
1. Contact your local Micron or distribution sales office to request additional documentation.
2. Visit www.micron.com for technical documentation.
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW
NOR Flash Devices
Revision History
Revision History
Rev. A – 10/14
• Initial release
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000
www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
PDF: 09005aef85f2d9a7
tn1338_mg_MX29GL-GF_MX68GL-G_to_mt28ew.pdf - Rev. A 10/14 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.