2015-12-23
GaAlAs Light Emitting Diode (660 nm)
Version 1.3
SFH 464 E7800
Features:
•
Radiation without IR in the visible red range
•
Cathode is electrically connected to the case
•
High reliability
•
Same package as BP 103, SFH 4841
•
DIN humidity category in acc. with DIN 40 040 GQG
Applications
•
Photointerrupters
•
Fiber optic transmission
•
Sensor technology
•
Light curtains
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Ordering Information
Type:
Radiant Intensity
Ordering Code
Ie [mW/sr]
IF = 50 mA, tp = 20 ms
SFH 464 E7800
2015-12-23
1.5 (≥ 1)
Q62702P1745
1
Version 1.3
SFH 464 E7800
Maximum Ratings (TA = 25 °C)
Parameter
Symbol
Values
Unit
Operation and storage temperature range
Top; Tstg
-40 ... 80
°C
Reverse voltage
VR
3
V
Forward current
IF
50
mA
Surge current
(tp ≤ 10 µs, D = 0)
IFSM
1
A
Power consumption
Ptot
140
mW
Thermal resistance junction - ambient
RthJA
450
K/W
Thermal resistance junction - case
RthJC
160
K/W
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
VESD
2
kV
Characteristics (TA = 25 °C)
Parameter
Symbol
Values
Unit
Peak wavelength
(IF = 50 mA, tP = 20 ms)
(typ)
λpeak
660
nm
Spectral bandwidth at 50% of Imax
(IF = 50 mA, tp = 20 ms)
(typ)
∆λ
25
nm
ϕ
± 23
Half angle 1) page 8
Dimensions of active chip area
(typ)
LxW
Distance chip front to case surface
(min ..
max)
H
Rise and fall time of Ie ( 10% and 90% of Ie max)
(IF = 50 mA, RL = 50 Ω)
(typ)
tr, tf
100
ns
Capacitance
(VR = 0 V, f = 1 MHz)
(typ)
C0
30
pF
Forward voltage
(IF = 50 mA, tP = 20 ms)
(typ (max)) VF
2.1 (≤ 2.8)
V
IR
0.01 (≤ 10)
µA
Reverse current
(VR = 3 V)
0.325 x 0.325
°
0.3 ... 0.7
mm x
mm
mm
Total radiant flux
(IF=50 mA, tp=20 ms)
(typ)
Φe
11
mW
Temperature coefficient of Ie or Φe
(IF = 50 mA, tp = 20 ms)
(typ)
TCI
-0.4
%/K
2015-12-23
2
Version 1.3
SFH 464 E7800
Parameter
Symbol
Values
Unit
Temperature coefficient of VF
(IF = 50 mA, tp = 20 ms)
(typ)
TCV
-3
mV / K
Temperature coefficient of wavelength
(IF = 50 mA, tp = 20 ms)
(typ)
TCλ
0.16
nm / K
Ie, min
1
mW / sr
Radiant intensity 1) page 8
(IF = 50 mA, tp = 20 ms)
Relative Spectral Emission 2) page 8
Irel = f(λ), TA = 25°C
Radiant Intensity 2) page 8
Ie / Ie(50mA) = f(IF), single pulse, tp = 20 µs, TA =
25°C
OHR01869
100
Ι rel %
10 2
OHR01870
Ιe
80
Ι e 50 mA
10 1
60
10 0
40
10 -1
20
0
600
2015-12-23
650
700
nm
λ
10 -2
750
10 0
3
10 1
10 2
mA
ΙF
10 3
Version 1.3
SFH 464 E7800
Max. Permissible Forward Current
IF, max = f(TA), RthJA = 450 K / W
ΙF
Max. Permissible Forward Current
IF, max = f(TC), RthJC = 160 K / W
OHF03861
120
mA
Ι F mA
100
100
80
80
60
60
40
40
20
20
0
OHR01462
120
0
20
40
60
0
80 ˚C 100
TA
Forward Current 2) page 8
IF = f(VF), single pulse, tp = 100 µs, TA= 25°C
10
20
40
60
80 ˚C 100
TA
Permissible Pulse Handling Capability
IF = f(tp), T A = 25 °C, duty cycle D = parameter
OHR01871
10 3
Ι F mA
0
ΙF
OHR01872
10 4
mA
tP
D=
10 3
2
0.1
tP
T
ΙF
T
D=
0.005
0.01
0.02
0.05
0.2
10 2 0.5
10 1
DC
10 0
2015-12-23
0
1
2
3
4
5
10 1
10 -5 10 -4 10 -3 10 -2 10 -1
6 V 7
VF
s
tP
4
10 1
Version 1.3
SFH 464 E7800
Radiation Characteristics 2) page 8
Irel = f(ϕ), TA= 25°C
40
30
20
0
10
ϕ
OHR01457
1.0
50
0.8
60
0.6
70
0.4
0.2
80
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
Package Outline
1
ø4.1 (0.161)
2.54 (0.100)
spacing
ø0.45 (0.018)
43
Chip position
ø4.3 (0.169)
2.7 (0.106)
1.1
0.9
1.1
(0
(0
.0
.03
2
14.5 (0.571)
3.6 (0.142)
12.5 (0.492)
3.0 (0.118)
5)
43
.0
(0
0.9
)
3
0.0
5)
(
)
ø5.5 (0.217)
ø5.2 (0.205)
GETY6625
Dimensions in mm (inch).
2015-12-23
5
100
120
Version 1.3
SFH 464 E7800
Package
Metal Can (TO-18), solder tabs lead spacing 2.54 mm (1/10"), anode marking: projection at package
bottom
Approximate Weight:
0.2 g
TTW Soldering
IEC-61760-1 TTW
OHA04645
300
10 s max., max. contact time 5 s per wave
˚C
T 250
235 ˚C - 260 ˚C
First wave
Second wave
Continuous line: typical process
Dotted line: process limits
∆T < 150 K
200
Cooling
Preheating
ca. 3.5 K/s typical
150
ca. 2 K/s
130 ˚C
120 ˚C
100 ˚C
100
ca. 5 K/s
Typical
50
0
0
20
40
60
80
100
120
140
160
180
200
220 s 240
t
2015-12-23
6
Version 1.3
SFH 464 E7800
Disclaimer
Language english will prevail in case of any discrepancies or deviations between the two language wordings.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances.
For information on the types in question please contact our Sales Organization.
If printed or downloaded, please find the latest version in the Internet.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any
costs incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose!
Critical components* may only be used in life-support devices** or systems with the express written approval of
OSRAM OS.
*) A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that
device or system.
**) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be
endangered.
2015-12-23
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Version 1.3
SFH 464 E7800
Glossary
1)
Radiant intensity / Half angle: An aperture is used in front of the component for measurement of the radiant
intensity and the half angle (diameter of the aperture: 1.1 mm; distance of aperture to case back side: 4.0 mm). This
ensures that solely the radiation in axial direction emitting directly from the chip surface will be evaluated during
measurement of the radiant intensity. Radiation reflected by the bottom plate (stray radiation) will not be evaluated.
These reflections impair the projection of the chip surface by additional optics (e.g. long-range light reflection
switches). In respect of the application of the component, these reflections are generally suppressed by apertures
as well. This measuring procedure corresponding with the application provides more useful values. This aperture
measurement is denoted by "E 7800" added to the type designation.
2)
Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or
calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily
correspond to the actual parameters of each single product, which could differ from the typical data and calculated
correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data
will be changed without any further notice.
2015-12-23
8
Version 1.3
SFH 464 E7800
Published by OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com © All Rights Reserved.
2015-12-23
9