History of MEMS at RIT
ROCHESTER INSTITUTE OF TECHNOLOGY
MICROELECTRONIC ENGINEERING
History of MEMS at RIT
Dr. Lynn Fuller
Webpage: http://people.rit.edu/lffeee
Microelectronic Engineering
Rochester Institute of Technology
82 Lomb Memorial Drive
Rochester, NY 14623-5604
Tel (585) 475-2035
Email: [email protected]
Department webpage: http://www.rit.edu/kgcoe/microelectronic
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
1-23-2017 history of MEMS.ppt
Page 1
History of MEMS at RIT
OUTLINE
MEMS Time Line at RIT
MEMS Technology Time Line at RIT
Examples of Research Projects in MEMS
Examples of Senior Project in MEMS
Examples of Masters Thesis Projects in MEMS
Examples of Course Projects in MEMS
Lots of Pictures and Movies of MEMS Devices
The examples in this presentation represents only a few of the
many achievements in MEMS at RIT over the past 20 years
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 2
History of MEMS at RIT
MEMS TIME LINE
1982 Microelectronic Engineering Program Starts
1986 RIT Dedicates Microelectronic Engineering Cleanroom 1987 First
Graduates of MicroE and Start of RIT’s First Full
Time Masters
Program in Engineering (ME MME)
1989 First MEMS Research Project – Industry Sponsor
1990 First Federally Funded MEMS Research Project
1991 First Senior Project on MEMS
1994 First MEMS Patent Issued to RIT
1995 Student Run Factory to Manufacture CMOS Devices
1996 First Masters Thesis on MEMS Devices
1997 Incubator to Provide Lab Access for Start Up Companies
1999 First MEMS Courses Taught at RIT
2000 First Short Course on MEMS for Industry People
2001 First MEMS Courses Taught in Mechanical Engineering
2002 Start of the Ph.D. Program in Microsystems Engineering
2003 First NSF Funded MEMS Curriculum Development Project and First
MEMS Course Taught by EE
2011 First MEMS Ph.D. Student, Journal Publication, 2nd MEMS Patent
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 3
History of MEMS at RIT
MEMS TECHNOLOGY TIME LINE
2”& 3” Wafer Fab – Metal Gate PMOS
Optical Pattern Generator and Maskmaking
Contact Lithography
Wafer Saw and Wire Bonder
1986 4” Wafer Fab – Metal Gate PMOS
Stepper Lithography
1987 E-Beam Maskmaking
1989 LPCVD Poly, Nitride, LTO
Reactive Ion Etch
Ion Implant
1991 CMOS Capability
1995 MESA Work-in-Process Tracking System
1999 6” Wafer Fab – CMOS Capability
CMP Tools
2002 Deep Trench Etch Tool
Rochester Institute
of Technology
PE
CVD Tool
Microelectronic Engineering
2010 ASML Stepper
1982
© January 23, 2017 Dr. Lynn Fuller
Page 4
History of MEMS at RIT
FIRST MEMS RESEARCH PROJECT - MICRO GAS
CHROMATOGRAPHY
1989 Dr. Lane, Dr.
Fuller, David Price and
Perkin Elmer Co
Research Project to
make gas
chromatograph
channels in silicon
wafers.
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 5
History of MEMS at RIT
RIT’S FIRST MEMS PATENT – DR. LANE, 1994
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 6
History of MEMS at RIT
FORCE BALANCE ACCELEROMETER MICRO SYSTEM
Feedback
If Vo positive
Cc
C2
Measure C2
V2
+
Mass
C1
Cc
Measure C1
Feedback
If Vo negative
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Vo
V1
Dr. Lane, 1992
Bell Aerospace, Inc.
Page 7
History of MEMS at RIT
RIT’S FIRST MICRO MOTORS – SENIOR PROJECT
100 µm
Matt Matessa, 1991, BSµE,
Joined Cypress Semiconductor
San Jose, CA
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 8
History of MEMS at RIT
RIT’S FIRST PHOTONIC DEVICES – SENIOR PROJECT
Dave Borkholder, 1994,
after graduation from RIT
joined Ph.D. program in
EE at Stanford University
Palo Alto, CA
HOT FILAMENT LIGHT SOURCES
600 µm
GaP wafers with n-type
epilayer, add gold
metal, dice and wire
bond to RIT thick film
ceramic package.
100 µm
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 9
History of MEMS at RIT
CAPACITOR MICROPHONE – SENIOR PROJECT
1 µm Aluminum
Jon Stephan, 1995, joined
Intel Corporation
Folsom, CA
2.0 µm Gap
Rochester Institute of Technology
Microelectronic Engineering
ALUMINUM DIAPHRAGM
CAPACITIVE MICROPHONE
© January 23, 2017 Dr. Lynn Fuller
Page 10
History of MEMS at RIT
MICROPHONE SIGNAL CONDITIONING
i
R
9V
i
Vo
TL081
V
+
C
-9 V
Co = Average value of C
Cm = amplitude of C change
C = Co +Cm sin (2pft)
V is constant across C
Vo = - i R
i = d (CV)/dt
i = V Cm 2 p f cos (2pft)
Vo = - 2pf V R Cm cos (2pft)
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
amplitude of Vo
Page 11
History of MEMS at RIT
CMOS OPERATIONAL AMPLIFIER – MASTERS THESIS
+V
10
M11
M3
L/W
80/20
8
2
M4
20/40
M10
M6
20/40
3
80/20
7
5
M9
80/20
20/30
M1
Vin-
M2
20/30
20/30
4
9
Vin+
1
M7
6
M5
20/40
Vout
20/40
20/40
M8
-V
p-well CMOS
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
20
dimensions
L/W
(µm/µm)
Page 12
History of MEMS at RIT
CMOS OPERATIONAL AMPLIFIER – MASTERS THESIS
ROCHESTER INSTITUTE OF TECHNOLOGY
MICROELECTRONIC ENGINEERING
LFF OPAMP.XLS FILE3B
LOT F960319 OPAMP TEST RESULTS - 1-29-97
Gain
dB
73.9794
73.53387
73.33036
70.31748
67.53154
65.48316
63.97314
62.41148
61.51094
60.34067
59.46256
58.68997
58.0618
57.50123
57.14665
56.5215
56.1236
55.56303
20
0
-20
Vout
V
10
9.5
9.28
6.56
4.76
3.76
3.16
2.64
2.38
2.08
1.88
1.72
1.6
1.5
1.44
1.34
1.28
1.2
0.02
0.002
0.0002
Vin
mV
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
Op Amp Frequency Response
80
70
60
50
Ga in dB
Frequency
hZ
1
5
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
50000
500000
10000000
40
30
20
10
0
-10
-20
1
10
100
1000
10000
100000 1000000 10000000
Frequency Hz
Ed Sayer, MSEE 1991, joined Digital Equipment Corp.,
Hudson, MA
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 13
History of MEMS at RIT
TOP SIDE BULK MICROMACHINED PRESSURE
SENSORS – SENIOR PROJECT
Pressure Sensor with
Nitride Diaphragm
and Poly Piezo Resistors
over Bulk Etched Cavity
300 µm
Jason Trost, 1995 BSµE,
joined Harris Semiconductor
Mountaintop, PA
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 14
History of MEMS at RIT
NIH FUNDED RESEARCH ON PRESSURE SENSORS
Source
Gate
Drain
Diaphragm
Insulator
Contact
Si Wafer
Air Gap (~1 atm)
Kerstin Babbitt, 1997
BSEE U of Rochester, joined
Motorola, Austin, TX
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 15
Bottom
Plate
History of MEMS at RIT
FINITE ELEMENT ANALYSIS
2mm x 2mm Crystalline Silicon Diaphragms 30μm thick 50psi
Circular Diaphragm
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 16
History of MEMS at RIT
2000 µm
NIH FUNDED RESEARCH ON PRESSURE SENSORS
FIRST MEMS DEVICE WITH INTEGRATED ELECTRONICS
Sensor
Oscillator
20/100 20/100 20/100
C sensor
5 to 25 pF
VDD= -10V
40/20
VO
600/20
100/20 100/20 100/20
C parasitic = 10pF
0 to 5 mm Hg Pressure Range
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 17
GND
R load
1 Meg
C load
20 pF
History of MEMS at RIT
NIH FUNDED RESEARCH ON PRESSURE SENSORS
Vgate
Vsource
15 µm
Vdrain
75 µm
Poly
Diaphragm
5x
Vgate
2 µm n+ Poly
Aluminum Plug
Vdrain
Vsource
Etch Holes
Contact Cut
to Poly Gate
Rochester Institute of Technology
Microelectronic Engineering
P+
1 µm space (vacuum)
P+
1000 Å Oxide
© January 23, 2017 Dr. Lynn Fuller
n-type silicon
Page 18
History of MEMS at RIT
NIH FUNDED RESEARCH ON PRESSURE SENSORS
Kerstin Babbitt 1997, Motorola
Stephanie Bennett 1997, ASML
Sheila Kawati 1998, Syracuse Medical School
An Pham 1999, Integrated NanoTechnology
Dr. Lynn Fuller
500 µm
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 19
History of MEMS at RIT
INCUBATOR - ADVANCED VISION TECHNOLOGY INC.
Transparent
Si 2 Window
O
Seal/Plug
Vacuum Chamber
Control Gate
Emitter
Insulator
Low Voltage Phosphor
Substrate
Micro-encapsulated Chamber
Integrated Phosphor
Field Emission
Device
.900
Color Chart of AVT Phoshors
.800
.700
.600
YELLOWISH
GREEN
GREEN
.500
.400
BLUISH
GREEN
BLUE
.300 GREEN
.200
Rochester Institute of Technology
Microelectronic Engineering
GREENISH
BLUE
BLUE
.100
000
© January 23, 2017 Dr. Lynn Fuller
PINK
RED
PURPLISH
RED
REDDISH
PURPLE
.100 .200 .300 .400 .500 .600 .700 .800
Page 20
History of MEMS at RIT
INCUBATOR – INTEGRATED NANO-TECHNOLOGIES, LLC
Hybridization
Courtesy of
T A
GC
A T
C G
A
T
AT
Gold
INT Bio-Detect Card
65°C
1 µm
A T
CG
T A
G AC
T
T A
Gold
Dr. David
Chafin and Dr.
Rick Murante
Because the DNA is hybridized to a probe DNA with
15 matching base pairs, the probability that the attached
DNA is the desired DNA is one billion to one or better.
(i.e. 415 )
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 21
History of MEMS at RIT
FIRST MEMS PROJECT BETWEEN COE AND COS
CHEMIRESISTOR
Simple inter-digitated electrodes coated
with a chemically sensitive layer that
changes the resistance in response to a
few ppm of some (or many) chemicals
Copper-substituted Phthalcyanine
conductive polymer is sensitive to CCl4,
NH3 and N2O
or
Carbon Nano-Tubes and various polymers
Dr. Lynn Fuller
Dr. KSV Santhanam
Yatin Prayag 1999
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Resistor with
25µm gaps
25µm length
7250µm width
Page 22
History of MEMS at RIT
CHEMICAL SENSORS
Upper Left: Finished Sensor with chip pins
Upper Right: Close up of interdigitated gold fingers
Elizabeth Gregg 2005
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 23
History of MEMS at RIT
CHEMICAL SENSORS
Mix a polymer with Carbon Black
and apply a thin coat over
interdigitated gold fingers
Testing
30s off, 120s on, 60s off, 120s on, 30s
off 0.1 ml Acetone/ 125 ml bottle =
800 ppm
Resistance goes from ~100 ohms (no
vapor) to ~ 4,000 ohms (with vapor)
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 24
History of MEMS at RIT
FIRST MECHANICAL ENGINEERING MEMS
RESEARCH PROJECT
FLOW PLATES FOR FUEL INJECTION
Variety of different size and
shape holes etched through 500 µm
thick silicon wafer
Dr. Risa Robinson
Delphi Products, Inc.
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 25
History of MEMS at RIT
BULK MICROMACHINED ATOMIZER FOR DRUG
DELIVERY
n-type
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 26
History of MEMS at RIT
MEMS THERMAL ACTUATOR MASTERS THESIS
Current Flow = zero
Current Flow = 10 mA
Skinny arm is hotter and expands
causing bending motion
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 27
History of MEMS at RIT
FINITE ELEMENT ANALYSIS OF THERMAL BENDING
ANSYS
Small arm 300 C, 10um X 100 um
Large arm 0 C, 30 um x 100 um
Maximum Displacement = 6 um
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Andrew Randles
Page 28
History of MEMS at RIT
INTEGRATION OF PHOTODIODE AND MEMS
December 2001
Kevin Munger. joined
IBM Burlington, VT
Thermal Actuator with
Integrated Photodiode
Rochester Institute of Technology
Microelectronic Engineering
Maximum Deflection 9 µm at 30 µw
162,000 cycles, 6 msec.,
© January 23, 2017 Dr. Lynn Fuller
Page 29
History of MEMS at RIT
SHORT COURSE JULY 2000 EXAMPLE
Cantilevers
Springs
Accelerometer
Electrostatic Comb Drive
Mirrors
Optical Modulators
Optical Arrays
Tweezers
Inductors
Contactors
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 30
History of MEMS at RIT
APRIL 1999 CLASS PROJECT
Cantilevers
Springs
Accelerometer
Electrostatic Comb Drive
Mirrors
Optical Modulators
Optical Arrays
Tweezers
Inductors
Contactors
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 31
History of MEMS at RIT
CANTILEVERS AND COMB DRIVES
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 32
History of MEMS at RIT
OTHER STRUCTURES
Mirror
Gears
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 33
History of MEMS at RIT
SEM PICTURES
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 34
History of MEMS at RIT
VERIFICATION OF RELEASE
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 35
History of MEMS at RIT
ELECTRICAL RESULTS
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 36
History of MEMS at RIT
ELECTROSTATIC ACTUATION OF CANTILEVER
1 µm Movement
Rochester Institute
10of Technology
Volt Electrostatic Actuation
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 37
History of MEMS at RIT
2003 CLASS PROJECT - GAS FLOW DETECTOR
Heater
GAS
Flow
Upstream
Temp
Sensor
Downstream
Temp Sensor
No Voltage to Heater
Resistance of Heater 1000 ohms
Resistance of Resistor 4800 ohms
Polysilicon Al
SacOx
Rochester Institute of Technology
Microelectronic Engineering
Si3N4
Silicon Substrate
© January 23, 2017 Dr. Lynn Fuller
Page 38
History of MEMS at RIT
SURFACE MICROMACHINED GAS FLOW SENSOR
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Vee Chee Hwang, 2004
Page 39
History of MEMS at RIT
PHOTOGRAPHS/SEMS/ELECTRICAL
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 40
History of MEMS at RIT
HEATER TESTING
Movie
20 Volts applied to Heater
Resistor changed by 100 ohms
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 41
History of MEMS at RIT
MOVIE OF HEATER
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 42
History of MEMS at RIT
2002 CLASS PROJECT – PRESSURE SENSOR
Polysilicon Resistors
Aluminum Metal Silicon Nitride Insulator
R1
Si
500 µm
R3
R2
Silicon Diaphragm
Silicon Nitride Etch Mask
Package
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 43
R4
History of MEMS at RIT
FINITE ELEMENT ANALYSIS
Points of
Maximum Stress
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 44
History of MEMS at RIT
FINITE ELEMENT ANALYSIS
2mm x 2mm Crystalline Silicon Diaphragms 30μm thick 50psi
Regular Si Diaphragm
Corrugated Diaphragm
Layer 2: 1.5mm x 1.5mm Polysilicon 1μm thick
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
By Rob Manley
Page 45
History of MEMS at RIT
DIAPHRAGM DEFORMATION MOVIE
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 46
History of MEMS at RIT
DIAPHRAGM STRESS MOVIE
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 47
History of MEMS at RIT
DIAPHRAGM FABRICATION
20 µM
20% KOH Etch, @ 72 C, 10 Hrs.
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 48
History of MEMS at RIT
MOVIE OF DIAPHRAGM MOVING
R3
R1
R4
R2
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 49
History of MEMS at RIT
TESTING
5 Volts
Vo2=2.5035v
R1
R3
R2
Vo1=2.4965v
R4
Gnd
Rochester Institute of Technology
Microelectronic Engineering
Apply and release chuck vacuum to
observe change in output voltage
© January 23, 2017 Dr. Lynn Fuller
Page 50
History of MEMS at RIT
WIRE BONDING AND PACKAGING
Fixture to hold TO-8 and TO-39
packages for wire bonding.
Rob Manley
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
K&S WAFER SAW
Page 51
History of MEMS at RIT
TESTING OF PACKAGED PRESSURE SENSORS
0
5
10
15
20
25
30
35
40
45
60.6
63.84
66.32
68.95
72.28
75.62
78.68
81.25
84.39
87.21
Output Voltage (mV)
MEMS Pressure Sensor Output
Rochester Institute of Technology
Microelectronic Engineering
5-15-02
© January 23, 2017 Dr. Lynn Fuller
100
90
80
70
60
50
40
30
20
10
0
y = 0.0002x2 + 0.586x + 60.593
0
10
20
30
Pressure (psi)
Page 52
40
50
History of MEMS at RIT
SURFACE MICROMACHINED GAS FLOW SENSOR
L of heater & resistor = 1mm
W (heater)
= 50um
W (resistors)
= 20um
Gap
= 10um
V applied = 27V to 30.5V
Temp ~600 °C at 26 volts
Lifetime > 10 min at 27 volts
(possibly longer, did not test)
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Vee Chee Hwang, 2004
Page 53
History of MEMS at RIT
BULK MICROMACHINED GAS FLOW SENSOR
Measured Resistance, V/I=1.2Kohms
Theoretical Resistance, L*Rhos/W= 400µm*60/20µm = 1.2Kohms
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Raunak Mann, 2004
Page 54
History of MEMS at RIT
THERMIONIC GAS DETECTOR
 Polysilicon Micro-filament
heater
Make hot
Thermionic
emission occurs
causing ionization
Force ions to a
collection plate
Measure resulting
current or voltage
Resistive
Heater
Collection
Plate
Amplified
Current
+
Biasing
Plate
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Ionic
current
Robert Manley, 2004
Page 55
History of MEMS at RIT
THERMIONIC GAS DETECTOR
Polysilicon
Un-etched
Sacox
Silicon Nitride
Si
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Robert Manley, 2004
Page 56
History of MEMS at RIT
THERMIONIC GAS DETECTOR
Cold
Hot
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Robert Manley, 2004
Page 57
History of MEMS at RIT
MODIFIED BULK PROCESS FOR MEMS CLASS 2004-06
Metal
PE CVD Nitride
Poly
Diffusion
Diaphragm
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 58
History of MEMS at RIT
MODIFIED BULK PROCESS FOR MEMS CLASS 2004-06
Pressure Sensor, diffused resistors or poly resistors
Microphone- more sensitive pressure sensor
Speaker – diaphragm with coil on it, magnet below
Accelerometer – diaphragm with mass in center from back etch donut
Diaphragm Actuator with coil and resistors for sensing and feedback
Optical pyrometer with thermocouples on diaphragm
Heater on diaphragm either poly or diffused resistor heater
Heater plus temperature sensor (diffused heater, poly resistor sensor)
Heater plus interdigitated chemical sensor
Cantilever accelerometer with piezoresistors either poly or diffusion, mass from back
etch donut
Cantilever accelerometer with magnetic coil for sensor, mass from back etch donut
Gas flow sensor single resistor anemometer
Gas flow sensor with heater and two resistors
Torsional mirror with coil actuators
Gyroscope with piezoresistor sensors or coil and magnet sensors, with mass from
back etch donut for each ½ of torsion bar
Transistors and logic, RF Inductors
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 59
History of MEMS at RIT
MODIFIED BULK PROCESS FOR MEMS CLASS 2004-06
Torisonal Mirror
Class Project Chip
Rochester Institute of Technology
Microelectronic Engineering
Gas Flow Sensor
© January 23, 2017 Dr. Lynn Fuller
Page 60
History of MEMS at RIT
MODIFIED BULK PROCESS FOR MEMS CLASS 200406
Movie
Thermopile
Speaker
Rochester Institute of Technology
Microelectronic Engineering
Accelerometer
Inductor
© January 23, 2017 Dr. Lynn Fuller
Pressure Sensor
Page 61
History of MEMS at RIT
MEMS ACTUATOR AND POSITION SENSOR
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 62
History of MEMS at RIT
VISCOCITY SENSOR JOURNAL PUBLICATION AND PATENT
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 63
History of MEMS at RIT
MODIFIED BULK PROCESS FOR MEMS CLASS 2004-06
Wafer Inspection
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Backside of Wafer
Page 64
History of MEMS at RIT
BIO PROBES
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 65
History of MEMS at RIT
SECOND VERSION COMPLETED DEVICES
W3
W1
L1
L2
W2
Rochester Institute of Technology
Microelectronic Engineering
W1 = 300 µm
W2 = 1100
W3 = 450
L1 = 1400
L2 = 1250
© January 23, 2017 Dr. Lynn Fuller
Page 66
History of MEMS at RIT
THERMALLY ACTUATED MEMS MICRO MIRROR
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 67
History of MEMS at RIT
DEVICE CROSS SECTION
Mechanical Poly Layer
Metal
Sacrificial Oxide
Field
Oxide
Bottom Poly
Starting Wafer
Bottom Poly 1 (Red) Layer 1
Sacrificial Oxide (Blue Outline) Layer 2
Anchor (Green) Layer 3
Mechanical Poly 2 (Purple) Layer 4
Contact Cut (White) Layer 6
Metal (Blue) Layer 7
Outline (Yellow Outline) Layer 9
No
Implant Yellow Layer 15
Rochester Institute of Technology
Microelectronic
Engineering
Holes
Layer
16 (combined with Poly 2)
© January 23, 2017 Dr. Lynn Fuller
Page 68
History of MEMS at RIT
LIST OF MEMS DEVICES MADE WITH THIS PROCESS
Resistors – Micro Bolometer
Heaters – Chemical Sensors
Micro Mirror - Two Axis Mirror
Thermally Actuated Two Arm Cantilever
Chevron Actuators
Electrostatic Comb Drive
MEMS Switch
Accelerometer
Gas Flow Sensor, Anemometer, Thermionic
Light Modulator
Bio Probes
Speaker
Humidity Sensors
Pressure Sensors - Microphone
Temperature Sensors – Thermopile, Resistor
Inductors, Capacitors – Humidity Sensor
Rochester Institute
of Technology
Hall
Effect
Sensors – other Magnetic Field Sensors
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 69
History of MEMS at RIT
2014 MEMS MULTICHIP PROJECT DESIGN
Total 15 mm by
15 mm plus 500 um for
sawing into 9 chips for
overall 16.5mm by
16.5mm size.
Wafer sawing is easier if
all chips are the same size
5mm by 5mm
design space
for each project
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 70
History of MEMS at RIT
MEMS CLASS PROJECT FALL 2014
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 71
History of MEMS at RIT
2015 PROCESS DESCRIPTION
Mechanical Poly2 Layer
Metal
Sacrificial Oxide
Field
Oxide
Bottom Poly1
Starting Wafer
This is a surface micromachine process with two layers of polysilicon and one layer
of metal. Poly2 can be suspended above the wafer allowing for structures that can
move. The two poly layers can cross without connection or can be connected
through anchor holes. The metal layer can connect to Poly2 through a via or to
Poly1 through via and anchor holes. The yellow layers are silicon nitride.
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 72
History of MEMS at RIT
MENTOR GRAPHICS LAYOUT OF CANTILEVER
The cantilever shown is anchored on the left and free to move on the right. The
design includes resistive and capacitive position sensors and electrostatic actuation.
The device can be used as an accelerometer.
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 73
History of MEMS at RIT
2015 MEMS MULTICHIP PROJECT DESIGN
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 74
History of MEMS at RIT
CLEAR FIELD RETICLE FOR ASML
Poly One Non-Chrome Side
Metal Chrome Side
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 75
History of MEMS at RIT
SURFACE MEMS 2015 PROCESS
1. Starting wafer
2. PH03 – level 0, Marks
3. ET29 – Zero Etch
4. ID01-Scribe Wafer ID, D1…
5. ET07 – Resist Strip, Recipe FF
6. CL01 – RCA clean
7. OX04 – 6500Å Oxide Tube 1
8. CV01 – LPCVD Poly 5000Å
9. IM01 – Implant P31, 2E16, 60KeV
10. PH03 – level 1 Poly-1
11. ET08 – Poly Etch
12. ET07 – Resist Strip, Recipe FF
13. CL01- RCA Clean
14. OX05 – 700Å Dry Oxide
15. CV02- LPCVD Nitride 4000Å
16. PH03 – level 2 Anchor
17. ET29 – Etch Nitride
18. ET07 - Resist Strip, Recipe FF
19. CL01 – RCA Clean
20. CV03-TEOS SacOx Dep 1.75um
21. PH03 – level 3 SacOx Define
22. ET06 - wet etch SacOx Define Etch
23. ET07- Resist Strip, Recipe FF
24. CL01 – RCA Clean
25. CV01-LPCVD Poly 2um, 140 min
26. PH03 - level 4 No Implant
27. IM01-P31 2E16 100KeV
28. ET07 Resist Strip, Recipe FF
29. CL01 – RCA Clean
30. OX05- 500Å pad oxide
31. CV02 – 2000Å nitride
32. PH03 - level 5 Poly2
33. ET29 – Plasma Etch Nitride
34. ET06 – Wet Etch pad oxide
35. ET68 - STS Etch Poly2
36. ET07 - Resist Strip, Recipe FF
37. PH03 – level 6 Contact Cut
38. ET29 – Etch Nitride Contact Cut
39. ET06 – Etch Oxide Contact Cut
40. ET07 – Resist Strip, Recipe FF
41. 39. CL01 – RCA Clean two HF
42. ME01 – Metal Deposition - Al
43. PH03 – level 7 Metal
44. ET55 – Metal Etch - wet
45. ET07 – Resist Strip
46. PH03 – level 8 – Release
47. SA01 – Saw Wafer ½ Way
48. Special Soap Clean
49. ET66 – Final SacOx Etch
50. ET07 - Resist Strip with Acetone
51. Rinse and Dry w Isopropyl Pull
52. TE01 – wafer level testing
53. SEM1 – Pictures
54. Packaging and Testing
12-8-15
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 76
History of MEMS at RIT
BLOG - ZERO ETCH AND PHOTORESIST STRIP
Today’s Goal: Coat the wafers with photoresist, expose with ASML stepper, develop
and plasma etch ASML alignment marks on six wafers.
Step 2: Etch Silicon using Drytek Quad 482 Etcher –
Cleaning of chamber for 5 min. in 02 plasma
Etching the device wafer for 2 min. in CF4, CHF3 and O2 plasma
Inspection of alignment marks on wafer
Removal of Photoresist using GaSonics - (recipe FF)
Microscope images of alignment marks before and after P.R. removal
Before P.R. removal
After P.R. removal
Rochester Institute of Technology
Drytek
Quad
Microelectronic
Engineering
GaSonics PR Asher
Authors: Abhinav, Nikhil, Ranjana, Shruthi, Yamini
© January 23, 2017 Dr. Lynn Fuller
Page 77
October 19, 2015
History of MEMS at RIT
BLOG - RCA CLEAN AND OXIDE GROWTH
Today’s Goal: Remove organic and metallic contaminants from wafers with RCA
clean, steam oxide growth of 6500Å of oxide in Bruce Tube 1.
• Performed step 6: CL01 (RCA clean)
 Cleaned four wafers from lot
 Processed through SRD
afterwards
• Adam developed and etched the other
two wafers in the lot
• Performed step 7: OX04 (oxide growth)
 Procedure used to grow 6500A
of oxide
• Measured Oxide Thickness:
Mean : 6597.7 Å Std Dev. = 0.38%
OX04 – oxide
growth
CL01 – RCA Clean
Rochester Institute of Technology
Microelectronic Engineering
Authors: Mattias Herrfurth, Corey Shay
© January 23, 2017 Dr. Lynn Fuller
Page 78
October 20, 2015
History of MEMS at RIT
BLOG - POLYSILICON2 ETCHING
Today’s Goal: To etch Polysilicon2 on remaining wafers
• Using the dry tech quad tool, Recipe FACPOLY
• Chamber 2, Time= 18 minutes
Adam at Dry Tech Quad
Wafer Bfore Poly Etch
Wafer After Poly Etch
Rochester Institute of Technology
Microelectronic Engineering
Authors: Ankur
© January 23, 2017 Dr. Lynn Fuller
Page 79
December 5, 2015
History of MEMS at RIT
BLOG - CONTACT LITHO, NITRIDE & OXIDE ETCH
Today’s Goal: To perform Level 6, Contact cut lithography and Nitride and Oxide etch
on wafers D2, D4, D6.
• Manual coating of PR S1827
• Contact cut lithography with Dose- 400 mj/cm2
 Focus offset – 0.5 micro
 σ = 0.7
• Post bake at 140 °C
• Nitride Etch –
 Recipe – Factory Nitride Etch, Lam 490
 Gas used – SF6
 Time – (3 minutes for etch + 1 minute over
etch)/wafer
• Buffered Oxide Etch –
 BOE 5.2:1 - for 2 minutes
 Deionized water - for 5 minutes, SRD
Wafer after Oxide etch
Rochester Institute of Technology
Microelectronic Engineering
Authors: Abhinav, Nikhil, Ranjana, Shruthi, Yamini
© January 23, 2017 Dr. Lynn Fuller
Page 80
December 07, 2015
History of MEMS at RIT
BLOG - ALUMINUM METAL DEPOSITION
Today’s Goal: Deposit Al using CVC601 Sputter tool for a target thickness of
10,000Å.
•
•
Step 42: ME01 – Metal Deposition – Al
4 device wafers (D2, D3, D4, D6 ) + 1 control wafer with tape for measurement
 Time ~ 34 min
 2000 Watts for ~300 Å/min ( Sputtering power )
 Pressure 5 mT ( Sputtering Pressure )
 Argon Flow 28 sccm ( to set the Sputtering Pressure )
 Arc detect count -> 40
Pre-sputtering: 5 min same power - Arc detect count -> 3
Remove contaminants from target expose to atmosphere (Al 2O3, AlN, etc.).
Target
Wafer after Sputtering
Inside the Vacuum
Chamber
Inside the Vacuum Chamber
Rochester Institute
of Technology
with theMicroelectronic
Platen Engineering
without the Platen
Authors: Miaotian Wang
© January 23, 2017 Dr. Lynn Fuller
Page 81
December 9, 2015
History of MEMS at RIT
OIL QUALITY MEMS MULTI-SENSOR
Photo Diode
5mm x 5mm
Diffused Heater
Actuator
Viscosity Sensor
Water in Oil
EIS
Diode
Temperature
Sensor
Picture of MEMS Multisensor
Device 2H 30V-30us pulse v. SAE 60 temperature
SAE60_35_Y
4.00E-07
SAE60_43_Y
SAE60_54_Y
2.00E-07
Displacement (m)
SAE60_75_Y
0.00E+00
-5.00E-04
0.00E+00
5.00E-04
1.00E-03
-2.00E-07
-4.00E-07
-6.00E-07
-8.00E-07
-1.00E-06
Rochester Institute of Technology
Microelectronic Engineering
Time (s)
Temp Sensor Test
Viscosity
Oil with 1% Soot
© January 23, 2017 Dr. Lynn Fuller
Page 82
1.50E-03
2.00E-03
History of MEMS at RIT
MICROSYSTEM
Battery
USB Power
Energy Harvester
Power
Management
other
.
.
.
.
µP
Rochester Institute of Technology
Microelectronic Engineering
.
.
.
.
Communication
MEMS
Signal
Conditioning
Team Galt’s definition for Microsystems is the integration of MEMS
sensors and actuators with CMOS electronics to provide solutions for a
wide variety of applications including automotive, military, aerospace,
consumer and biomedical.
USB, WiFi
CAN (other)
Wireless
World Wide Web
© January 23, 2017 Dr. Lynn Fuller
Page 83
History of MEMS at RIT
MULTISENSOR MICROSYSTEM
Back
µP
Rochester Institute of Technology
MEMS Multisensor Chip
Acceleration (shock)
Temperature, Humidity
Front
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 84
History of MEMS at RIT
OTHER PROJECTS
Dr. David Borkholder – PI
Blast Dosimeter / DARPA
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 85
History of MEMS at RIT
OTHER PROJECTS
BlackBox Biometrics
The company was founded by RIT professor David
Borkholder and recently graduated from the Venture
Rochester Institute of Technology
Creations
incubator. http://b3inc.com
Microelectronic business
Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 86
History of MEMS at RIT
ENERGY HARVESTING
Indirect Conversion of Radiation for 20 Year-Life Batteries
Green Optimized Photocell
Gaseous Tritium Light Source (GTLS)
1.6 cm
Rochester Institute of Technology
Microelectronic Engineering
(GTLS) – Phosphor Coat Glass Vial with Tritium Inside
Tritium: Radioactive Isotope of Hydrogen, 3H, 12year half life
Emits Electrons Through Beta Decay
Electrons Interact With Phosphor Material
Green Light is Emitted (Radio luminescence)
Photo Detector Captures Light and Converts to Energy
Energy Management Electronics
Stores Energy in a Super Capacitor
© January 23, 2017 Dr. Lynn Fuller
Page 87
History of MEMS at RIT
VIBRATION ENERGY HARVESTER
Dr. Denis Cormier
3-D Printer
Brinkman Lab at RIT
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 88
History of MEMS at RIT
WIRELESS MICROSYSTEMS
Capacitor Sensor
Bluetooth
Transceiver
2.5” x 3” BT-Arduino
Wireless Platform
Breadboard
5” x 8” Breadboard
Rochester Institute of Technology
Microelectronic Engineering
1” x 1” PCB
© January 23, 2017 Dr. Lynn Fuller
2mm x 3mm
Custom CMOS & MEMS
Page 89
History of MEMS at RIT
COMPANIES WITH LINKS TO RIT
Personal Sound Technologies
Advanced Vision Technologies
Integrated Nanotechnologies
MicroGen
BlackBox Biometerics
Tenrehte
Simpore
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 90
History of MEMS at RIT
ACKNOWLEDGEMENTS
Dr. Richard Lane
Dr. Risa Robinson
Dr. Robert Pearson
Dr. KSV Santhanam
Dr. Sergey Lyshevski
Dr. David Borkholder
Dr. Karl Hirschman
Matt Matessa
Jon Stephan
Ed Sayer
Jason Trost
Kerstin Babbitt
Stephanie Bennett
Sheila Kawati
An Pham
Andrew Randles
Kevin Munger
Rob Manley
Vee Chee Hwang
Ivan Puchades
Team Galt
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 91
History of MEMS at RIT
TEAM GALT
Tal, Lynn, Ellen Sedlack, Christian, Artur, Ivan, Renat
B.S., M.S., Ph.D., students from EE,
Rochester Institute of Technology
ME,
MicroE, CE, Materials Science
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Heidi, Murat
Page 92
History of MEMS at RIT
DR. FULLER’S STUDENTS IN EMCR 890 MEMS CLASS 2002
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 93
History of MEMS at RIT
CONFERENCE PUBLICATIONS
1. “Nanocomposite Material for Sensing of Halogenated Methanes: A Model Based on Charge Transfer
Interaction for Selectivity,” R.Sangoi, L.Fuller, K.S.V. Santhanam, MRS Meeting, Boston,
Massachusetts, October, 2003.
2. “Design and Analysis of a Shear Stress Sensor for Microcirculation Investigation,” ASME Fluid
Engineering Division July 6-10, 2003, Honolulu, Hawaii, L.F.Fuller, Risa Robinson, et.el.
3. “Bulk Micromachined Pressure Sensor,” L.F.Fuller, Steve Sudirgo, Proceedings of the IEEE UGIM
Conference, June 2003, Boise State University.
4. “An Inter-digitated Electrode Detector for the Identification of a Single Specific DNA Molecule
Fragment,” L.F.Fuller, Renaldo Vega, Robert Manley, Vee Chee Hwang, Dan Jansen, An Pham, Nate
Wescott, Mike Connolly, Proceedings of the IEEE UGIM Conference, June 2003, Boise State
University.
5. “Fabrication of Polysilicon Surface Micromachined MEMs Structures”, Kevin Munger and Lynn F.
Fuller, Microelectronic Engineering, Rochester Institute of Technology, Proceedings of the IEEE UGIM
Conference, June 2001, Virginia Commonwealth University.
6. “MEMS Activity at Rochester Institute of Technology," L.F.Fuller, A.Pham, P. Merwah, Proceedings
of the IEEE UGIM Conference, June 20-23, 1999, Minneapolis, MN
7. "A Surface Micromachined Capacitive Pressure Sensor for Biomedical Applications," K.E.Babbitt,
L.F.Fuller, B.Keller, Proceedings of the IEEE UGIM Conference, July 20-23, 1997, Rochester, NY
8. "A Multi-project MEMs Leture and Laboratory Course," L.F.Fuller, Proceedings of the IEEE UGIM
Conference, July 20-23, 1997, Rochester, NY
9. "Microelectronic Engineering at RIT - The First 10 Years", L.F.Fuller, R.E.Pearson, S.K.Kurinec,
Rochester Institute of Technology
I.R.Turkman, M.A.Jackson,
R.L.Lane, Proceedings of the 10th Biennial University Industry
MicroelectronicB.W.Smith,
Engineering
Government Microelectronics Symposium, May 1993, Durham NC.
© January 23, 2017 Dr. Lynn Fuller
Page 94
History of MEMS at RIT
HOMEWORK – HISTORY OF MEMS
1. Read “A thermally Actuated Microelectromechanical (MEMS)
Device for Measuring Viscoscity” I. Puchades and L.F. Fuller, IEEE
Journal of MEMS, June 2011. Explain how the device works.
2. View the following link and read the article on “Blast Gauge”
http://www.rit.edu/research/media/documents/11_SS_Research_at_
RIT.pdf
What types of MEMS devices are inside the “Blast Gauge”.
3. Find the MEMS Fabrication Blog from the Fall of 2015. What
types of devices were made? Look for pictures of devices.
4. Why is packaging important for MEMS devices?
5. List the MEMS devices you use have in your car or phone.
Rochester Institute of Technology
Microelectronic Engineering
© January 23, 2017 Dr. Lynn Fuller
Page 95