VISHAY
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
High Speed Optocoupler, 10 Mbd
Features
• Choice of CMR performance of 10 kV/µs, 5 kV/µs,
and 100 V/µs
• High speed: 10 Mbd typical
• + 5 V CMOS compatibility
• Guaranteed AC and DC performance over temperature: - 40 to + 100 °C Temp. Range
• Pure tin leads
• Meets IEC60068-2-42 (SO2) and
IEC60068-2-43 (H2S) requirements
• Low input current capability: 5 mA
Agency Approvals
•
•
•
•
•
UL - File No. E52744
CSA 93751
DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Dual channel
Single channel
NC
A
1
8
2
7
C
3
6
NC 4
5
VCC
VE
VO
GND
6N137, SFH6741, SFH6742
A1 1
8
C1 2
C2 3
7
6
A2
5
4
VCC
VO1
VO2
GND
SFH6750, SFH6751, SFH6752
18921
Order Information
Part
Remarks
6N137
100 V/µs, Single channel, DIP-8
6N137-X006
100 V/µs, Single channel, DIP-8 400 mil (option
6)
6N137-X007
100 V/µs, Single channel, SMD-8 (option 7)
6N137-X009
100 V/µs, Single channel, SMD-8 (option 9)
Applications
SFH6741
5 kV/µs, Single channel, DIP-8
Microprocessor System Interface
PLC, ATE input/output isolation
Computer peripheral interface
Digital Fieldbus Isolation: CC-Link, DeviceNet,
Profibus, SDS
High speed A/D and D/A conversion
AC Plasma Display Panel Level Shifting
Multiplexed Data Transmission
Digital control power supply
Ground loop elimination
SFH6741-X006 5 kV/µs, Single channel, DIP-8 400 mil (option 6)
SFH6741-X007 5 kV/µs, Single channel, SMD-8 (option 7)
SFH6741-X009 5 kV/µs, Single channel, SMD-8 (option 9)
SFH6742
10 kV/µs, Single channel, DIP-8
SFH6742-X006 10 kV/µs, Single channel, DIP-8 400 mil (option
6)
SFH6742-X007 10 kV/µs, Single channel, SMD-8 (option 7)
SFH6742-X009 10 kV/µs, Single channel, SMD-8 (option 9)
SFH6750
100 V/µs, Dual channel, DIP-8
SFH6750-X006 100 V/µs, Dual channel, DIP-8 400 mil (option 6)
SFH6750-X007 100 V/µs, Dual channel, SMD-8 (option 7)
Description
The 6N137, SFH674x and SFH675x are single channel 10 Mbd optocouplers utilizing a high efficient input
LED coupled with an integrated optical photodiode IC
detector. For the single channel type, an enable function on pin 7 allows the detector to be strobed. The
internal shield provides a guaranteed common mode
transient immunity of 5 kV/µs for the SFH6741 and
SFH6751 and 10 kV/µs for the SFH6742 and
SFH6752.
Document Number 82584
Rev. 1.1, 05-Jul-04
SFH6750-X009 100 V/µs, Dual channel, SMD-8 (option 9)
SFH6751
5 kV/µs, Dual channel, DIP-8
SFH6751-X006 5 kV/µs, Dual channel, DIP-8 400 mil (option 6)
SFH6751-X007 5 kV/µs, Dual channel, SMD-8 (option 7)
SFH6751-X009 5 kV/µs, Dual channel, SMD-8 (option 9)
SFH6752
10 kV/µs, Dual channel, DIP-8
SFH6752-X006 10 kV/µs, Dual channel, DIP-8 400 mil (option 6)
SFH6752-X007 10 kV/µs, Dual channel, SMD-8 (option 7)
SFH6752-X009 10 kV/µs, Dual channel, SMD-8 (option 9)
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6N137/ SFH6741 / 42 / 50 / 51 / 52
VISHAY
Vishay Semiconductors
Truth Table (Positive Logic)
LED
ON
OFF
ON
ENABLE
H
H
L
OUTPUT
L
H
H
OFF
ON
OFF
L
NC
NC
H
L
H
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Average forward current1)
Parameter
Symbol
IF
Value
20
Unit
mA
Average forward current2)
Reverse input voltage
IF
15
mA
VR
5
V
VE
VCC + 0.5 V
V
Enable input
voltage1)
Enable input
current1)
Test condition
IE
5
mA
IFSM
200
mA
Symbol
VCC
Value
7
Unit
V
Output current
IO
50
mA
Output voltage
VO
7
V
dissipation1)
PO
85
mW
Output power dissipation2)
PO
60
mW
Symbol
Tstg
Value
- 55 to + 150
Unit
°C
Tamb
- 40 to + 100
°C
for 10 sec.
260
°C
for 1 minute
260
°C
5300
VRMS
Surge current
t = 100 µs
1)
Package: Single DIP-8
2)
Package: Dual DIP-8
Output
Parameter
Supply voltage
Output power
1)
Package: Single DIP-8
2)
Package: Dual DIP-8
Test condition
1 minute max.
Coupler
Parameter
Storage temperature
Test condition
Operating temperature
Lead solder
temperature1)
Solder reflow temperature2)
Isolation test voltage
1)
Package: DIP-8 through hole
2)
Package: DIP-8 SMD
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2
t = 1.0 sec.
VISO
Document Number 82584
Rev. 1.1, 05-Jul-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
VISHAY
Vishay Semiconductors
Recommended Operating Conditions
Parameter
Operating temperature
Test condition
Symbol
Tamb
Min
- 40
Typ.
Max
100
Unit
°C
VDD1, VDD2
4.5
5.5
V
Input current low level
IFL
0
250
µA
Input current high level
IFH
5
15
mA
Logic high enable voltage
VEH
2.0
VCC
V
Logic low enable voltage
VEL
0.0
0.8
V
Output pull up resistor
RL
330
4K
Ω
5
-
Supply voltage
RL = 1 kΩ
Fanout
N
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Input forward voltage
Test condition
IF = 10 mA
Symbol
VF
Min
1.1
Input reverse breakdown
voltage
Input diode temperature
coefficient
Input capacitance
Reverse current
IR = 10 µA
BVR
5
IF = 10 mA
dVF/ dTA
- 1.9
VR = 4.5 V
CIN
55
pF
IR
1
µA
f = 1 MHz, VF = 0 V
Typ.
1.4
Max
1.7
Unit
V
V
mV/°C
Output
Parameter
High level output
current
Input threshold
current
Test condition
VE = 2.0 V, VO = 5.5 V, IF = 250 µA
Symbol
IOH
VE = 2.0 V, VO = 5.5 V,
IOL (sinking) = 13 mA, VCC = 5.5 V
Low level output
voltage
High level supply
current (single
channel)
High level supply
current (dual
channel)
Low level supply
current
High level enable
current
Typ.
0.002
Max
1
Unit
µA
ITH
2.4
5.0
mA
VE = 2.0 V, IF = 5 mA,
IOL (sinking) = 13 mA, VCC = 5.5 V
VOL
0.2
0.6
V
VE = 0.5 V, IF = 0 mA, VCC = 5.5 V
ICCH
4.1
7.0
mA
VE = VCC, IF = 0 mA, VCC = 5.5 V
ICCH
3.3
6.0
mA
IF = 0 mA, VCC = 5.5 V
ICCH
8.2
14.0
mA
VE = 0.5 V, IF = 10 mA, VCC = 5.5 V
ICCL
4.0
7.0
mA
VE = VCC, IF = 10 mA, VCC = 5.5 V
ICCL
3.3
6.0
mA
VE = 2.0 V, VCC = 5.5 V
IEH
- 0.6
- 1.6
mA
Document Number 82584
Rev. 1.1, 05-Jul-04
Min
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6N137/ SFH6741 / 42 / 50 / 51 / 52
VISHAY
Vishay Semiconductors
Parameter
Low level enable
current
Test condition
VE = 0.5 V, VCC = 5.5 V
Symbol
IEL
Min
VEH
2.0
High level enable
voltage
Low level enable
voltage
Typ.
Max
Unit
- 0.8
- 1.6
mA
V
VEL
0.8
V
Max
75*
Unit
ns
100
ns
75*
ns
Switching Characteristics
Over Recommended Temperature (Ta = - 40 to + 100 °C), VCC = 5 V, IF = 7.5 mA unless otherwise specified.
All Typicals at Ta = 25 °C, VCC = 5 V.
Parameter
Propagation delay time to high
output level
Test condition
RL = 350 Ω, CL = 15 pF
Symbol
tPLH
Min
20
Typ.
48
Propagation delay time to low
output level
RL = 350 Ω, CL = 15 pF
tPHL
25
50
100
ns
Pulse width distortion
RL = 350 Ω, CL = 15 pF
| tPHL - tPLH |
2.9
35
ns
Propagation delay skew
RL = 350 Ω, CL = 15 pF
tPSK
8
40
ns
Output rise time (10 - 90 %)
RL = 350 Ω, CL = 15 pF
tr
23
ns
Output fall time (90 - 10 %)
RL = 350 Ω, CL = 15 pF
tf
7
ns
Propagation delay time of
enable from VEH to VEL
RL = 350 Ω, CL = 15 pF,
VEL = 0 V, VEH = 3 V
tELH
12
ns
Propagation delay time of
enable from VEL to VEH
RL = 350 Ω, CL = 15 pF,
VEL = 0 V, VEH = 3 V
tEHL
11
ns
tPLH
tPHL
*
JEDEC registered data for the 6N137
VCC
5V
Single Channel
Pulse Gen.
Zo = 50 Ω
t f = t r = 5 ns
1
IF
2
Input IF
Monitoring
Node
RM
3
VCC 8
VE
7
VOUT
6
4
5
GND
RL
0.1 µF
Bypass
IF = 7.5 mA
IF = 3.75 mA
0 mA
Input IF
Output VO
Monitoring
Node
VOL
Output VO
1.5 V
VOH
C L = 15 pF
tPLH
The Probe and Jig Capacitances are included in CL
tPHL
18964
Figure 1. Single Channel Test Circuit for tPLH, tPHL, tr and tf
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Document Number 82584
Rev. 1.1, 05-Jul-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
VISHAY
Vishay Semiconductors
Pulse Gen.
Zo = 50 Ω
t f = t r = 5 ns
+5V
Dual Channel
IF
1
VCC 8
2
7
3
6
4
5
RL
Input
Monitoring
Node
RM
GND
0.1 µF
Bypass
Output VO
Monitoring
Node
CL= 15 pF
18963
Figure 2. Dual Channel Test Circuit for tPLH, tPHL, tr and tf
Input VE
Monitoring Node
Pulse Gen.
Zo = 50 Ω
t f = t r = 5 ns
1
7.5 mA
IF
VCC
5V
Single Channel
2
3
VCC 8
VE
7
VOUT
6
RL
0.1 µF
Bypass
Output VO
Monitoring
Node
C L = 15 pF
4
3V
1.5 V
Input VE
tEHL
tELH
Output VO
1.5 V
5
GND
The Probe and Jig Capacitances are included in CL
18975
Figure 3. Single Channel Test Circuit for tEHL and tELH
Document Number 82584
Rev. 1.1, 05-Jul-04
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VISHAY
Vishay Semiconductors
Common Mode Transient Immunity
Parameter
Common mode
transient immunity
(high)
Test condition
|VCM| = 10 V, VCC = 5 V, IF = 0 mA,
Symbol
| CMH |
Min
Typ.
10000
Max
Unit
V/µs
| CMH |
5000
10000
V/µs
| CMH |
10000
15000
V/µs
10000
V/µs
VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 1)
|VCM| = 50 V, VCC = 5 V, IF = 0 mA,
VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 2)
|VCM| = 1 kV, VCC = 5 V, IF = 0 mA,
VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 3)
|VCM| = 10 V, VCC = 5 V, IF = 7.5 mA,
| CML |
VO(min) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 1)
|VCM| = 50 V, VCC = 5 V, IF = 7.5 mA,
| CML |
5000
10000
V/µs
| CML |
10000
15000
V/µs
VO(min) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 2)
|VCM| = 1 kV, VCC = 5 V, IF = 7.5 mA,
VO(min) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 3)
1)
For 6N137 and SFH6750
2)
For SFH6741 and SFH6751
3)
For SFH6742 and SFH6752
VCC
IF
5V
Single Channel
1
B
A
VFF
2
RL
VCC 8
VE
7
VOUT
3
6
4
5
GND
VCM
+
Pulse Generator
ZO = 50 Ω
0.1 µF
Bypass
Output VO
Monitoring
Node
VCM
0V
VO 5 V
VO 0.5V
VCM (PEAK)
Switch AT A: IF= 0 mA
V O(min.)
Switch AT A: IF = 7.5 mA
VO(max.)
CMH
CML
18976
Figure 4. Single Channel Test Circuit for Common Mode Transient Immunity
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Document Number 82584
Rev. 1.1, 05-Jul-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
VISHAY
Vishay Semiconductors
IF
Dual Channel
B
+5V
VCC 8
1
A
V
FF
2
7
3
6
RL
Output VO
Monitoring
Node
0.1 µF
Bypass
5
4
GND
VCM
+
Pulse Generator
ZO = 50 Ω
18977
Figure 5. Dual Channel Test Circuit for Common Mode Transient Immunity
Safety and Insulation Ratings
As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Parameter
Test condition
Tracking resistance (Comparative Tracking
Index)
Symbol
Min
CTI
175
Creeapage
Clearance
Insulation thickness
Typ.
Max
Unit
399
7
7
0.2
mm
mm
mm
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.60
IF = 20 mA
1.5
1.4
1.3
1.2
IF = 10 mA
IF = 1 mA
1.1
1.50
1.45
1.40
1.35
1.30
1.25
1.20
1.15
1.0
–40 –20
17610
1.55
IF = 50 mA
1.6
V F – Forward Voltage ( V )
V F – Forward Voltage ( V )
1.7
1.10
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 6. Forward Voltage vs. Ambient Temperature
Document Number 82584
Rev. 1.1, 05-Jul-04
0
17611
5
10 15 20 25 30 35 40 45 50
IF – Forward Current ( mA )
Figure 7. Forward Voltage vs. Forward Current
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VISHAY
Vishay Semiconductors
High Level Supply Current ( mA )
17.2
16.8
16.6
16.4
16.2
16.0
15.6
CCh–
V
BR
15.8
15.2
–40 –20
I
15.4
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
17612
Figure 8. Breakdown Voltage vs. Ambient Temperature
5
4
3
2
1
0
–40 –20
0
20
40
60
80
100
17616
Tamb – Ambient Temperature ( °C )
3.1
3.0
2.9
2.8
–40 –20
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
2.7
2.6
RL = 350 Q
2.5
2.4
RL = 4 kQ
2.3
2.2
RL = 1 kQ
2.1
–40 –20
0
20 40
60 80 100
Tamb – Ambient Temperature ( °C )
2.6
– Input Threshold OFF Current ( �-tA )
4.0
3.5
3.0
VCC = 7 V
IF = 10 mA
VCC = 5 V
IF = 10 mA
2.0
1.5
1.0
0.5
0.0
–40 –20
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 10. Low Level Supply Current vs. Ambient Temperature
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8
VCC = 5 V
IF = 0.25 mA
3.2
Figure 12. Input Threshold ON Current vs. Ambient Temperature
th
I
CCl
– Low Level Supply Current ( mA )
Figure 9. Reverse Current vs. Ambient Temperature
17614
3.3
Figure 11. High Level Supply Current vs. Ambient Temperature
I th – Input Threshold ON Current ( �-tA )
I R – Reverse Current ( nA )
6
2.5
VCC = 7 V
IF = 0.25 mA
3.4
2.8
7
17613
3.5
17615
I
– Breakdown Voltage ( V )
17.0
17617
2.5
2.4
RL = 350 Q
2.3
2.2
RL = 4 kQ
2.1
RL = 1 kQ
2.0
–40 –20
0
20 40
60 80 100
Tamb – Ambient Temperature ( °C )
Figure 13. Input Threshold OFF Current vs. Ambient Temperature
Document Number 82584
Rev. 1.1, 05-Jul-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
VISHAY
Vishay Semiconductors
0.25
5.5
VCC = 5.5 V
IF = 5 mA
IL = 16 mA
IL = 13 mA
5.0
0.20
0.15
IL = 10 mA
0.10
IL = 6 mA
0.05
0.00
–40 –20
4.0
3.5
3.0
2.5
2.0
0
20
40
60
80
100
0
2
3
4
5
Figure 17. Output Voltage vs. Forward Input Current
50
40
30
20
10
0
–40 –20
0
20
40 60 80 100
Tamb – Ambient Temperature ( °C )
35
30
25
20
15
10
5
0
–40 –20
0
20
40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 16. High Level Output Current vs. Ambient Temperature
Document Number 82584
Rev. 1.1, 05-Jul-04
80
tPLH, 1 kΩ
tPLH, 350 Ω
60
40
tPHL, 350 Ω
20
tPHL, 1 kΩ
tPHL, 4 kΩ
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
17622
Figure 18. Propagation Delay vs. Ambient Temperature
120
t P – Propagation Delay time ( ns )
40
100
0
–40 –20
50
45
tPLH, 4 kΩ
t P – Propagation Delay time ( ns )
I ol – Low Level Output Current ( mA )
1
IF – Forward Input Current ( mA )
120
IF = 5 mA
IF = 10 mA
Figure 15. Low Level Output Current vs. Ambient Temperature
I oh – High Level Output Current ( nA )
RL = 4 kQ
17621
60
17620
RL = 1 kQ
1.0
Figure 14. Low Level Output Voltage vs. Ambient Temperature
17619
RL = 350 Q
1.5
0.5
0.0
Tamb – Ambient Temperature ( °C )
17618
4.5
Vo – Output Voltage ( V )
Vol – Low Level Output Voltage ( V )
0.30
tPLH, 4 kΩ
100
80
tPLH, 1 kΩ
tPLH, 350 Ω
60
40
tPHL, 350 Ω
tPHL, 1 kΩ
20
tPHL, 4 kΩ
0
5
17623
7
9
11
13
15
IF – Forward Current ( mA )
Figure 19. Propagation Delay vs. Forward Current
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Vishay Semiconductors
300
PWD – Pulse Width Distortion ( ns )
50
t r,f – Rise and Fall Time ( ns )
tr, RL = 4 kΩ
RL = 4 kΩ
40
30
20
RL = 1 kΩ
10
RL = 350 Ω
0
–40 –20
20
40
60
80
150
tf , RL = 350 Ω
tf , RL = 1 kΩ
tf, RL = 4 kΩ
100
tr, RL = 1 kΩ
50
100
tr, RL = 350 Ω
5
7
9
11
13
15
IF – Forward Current ( mA )
17627
Figure 20. Pulse Width Distortion vs. Ambient Temperature
Figure 23. Rise and Fall Time vs. Forward Current
60
50
RL = 4 kΩ
40
30
RL = 1 kΩ
20
10
RL = 350 Ω
0
5
7
9
11
13
15
IF – Forward Current ( mA )
17625
t e – Enable Propagation Delay ( ns )
60
PWD – Pulse Width Distortion ( ns )
200
0
0
Tamb – Ambient Temperature ( °C )
17624
250
17628
Figure 21. Pulse Width Distortion vs. Forward Current
50
teLH = 4 kΩ
40
30
20
teLH = 1 kΩ
teLH = 350 Ω
teHL = 350 Ω
10
teHL = 1 kΩ
0
–40 –20
0
20
teHL = 4 kΩ
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 24. Enable Propagation Delay vs. Ambient Temperature
300
t r,f – Rise and Fall Time ( ns )
tr, RL = 4 kΩ
250
200
150
100
tr, RL = 1 kΩ
50
tr, RL = 350 Ω
0
–40 –20
17626
tf , RL = 350 Ω
tf , RL = 1 kΩ
tf, RL = 4 kΩ
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 22. Rise and Fall Time vs. Ambient Temperature
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Document Number 82584
Rev. 1.1, 05-Jul-04
Document Number 82584
Rev. 1.1, 05-Jul-04
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Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
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Document Number 82584
Rev. 1.1, 05-Jul-04