5.
Co-Investigators (CIs):
4. PI’s address: Dr. Ramphal Sharma
a)
Name:
Associate Professor, Department of Physics,
Address:
Dr. Babasaheb Ambedkar Marathwada University,
(Phone/e-mail):
Aurangabad M.S.
b)
Name:
Pin code
431004
Address:
Phone: 0240-2401365
Mobile:09422793173
(Phone/e-mail):
Fax:0240-2403115/2403335
Email: [email protected]
6. Main objectives of the proposal (not exceeding 50 words): To fabricate the low cost, high efficiency and stable solar
cell of nanostructured CdS/CuInSe2 thin films by cost effective chemical ion exchange method at room temperature.
7. Other objectives (not exceeding 50 words):To characterize these nanostructured CdS/CuInSe2 thin films for structural,
morphological and other opto-electronic applications.
8. Name(s) and affiliation(s) of visiting faculty or
research consultant(s), if any (Refer Item 12(g)
below)
9. Name of collaborating DRDO/other institutions, if
any, in the current proposal
10. Name of the collaborating DRDO scientist, if any
11. Name of DRDO Lab, if any, collaborated in the
past.
12. Two best publications in the field by the PI in last five years and brief references to any patents filed or technologies developed: The
chemical ion exchange method described in the present proposal is underway to filing the parent. Following are two best publications by
PI in the solar cell field:
1) Nanostructured p-CuIn3Se5/n-CdS heterojunction engineered using simple wet chemical approach at room temperature for
photovoltaic application, Material Chemistry and Physics, 127 (2011) 191–196.
2) Stoichiometry controlled conversion efficiency in nanostructured heterojunction solar cell of CdS/CuInSXSe2-X grown by
chemical ion exchange method at room temperature, Solar Energy, Accepted (2011).
Detail publications See Annexure I
13. Proposed expenditure on À
(Rs. In lakhs) during ¾
Year 1
Year 2
Year 3
Line total
a) Staff :
b) Equipment (including spares there of)
c) Operation and maintenance of equipment
d) Expendables
e) Travel
f) Contingencies
g) Visiting Faculty or Research Consultant(s)
h) Procured services (other than (g)) and metered utilities
Institutional overheads @ 15% of (a+b+c+d+e+f) only
Column totals
13. References to other ongoing projects with, or proposals made to, DRDO/other (including foreign) agencies:
Funding agency
Amount (Rs.)
Period
Title
Please see Annexure I
14. Cheque to be issued in favor of: The Registrar, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004
15. Administrative authority of host institution forwarding proposal
16. Signature of Principal Investigator (PI)
(Signature with seal and full name & designation)
Form vintage February 2001
For DRDO use
SUMMARY OF PROPOSAL TO DRDO FOR AN EXTRAMURAL RESEARCH GRANT
Date
Proposal (Title): Study and development of low cost nanostructured CdS/CuInSe2
recd.:
heterojunction thin film solar cell grown by chemical route.
Dte of ER&IPR File Number:
Keywords (4-5): Nanostructured, heterojunction, thin film, solar cell, chemical route
ERIP/ER/
i) Type of Institution: Central Govt/State Govt/Semi
Duration
Years:03
Govt/Pvt;
of grant: 36
ii) University/IIT/NIT/College/ Society(Regn No. . . . . . .
year
months
. . . . . .)/PSU/ Industry/Others
2. Principal Investigator (PI):
3. Date of Birth
Referees’ reports 01
02 03
Name:
Dr. Ramphal Sharma
YY
MM
DD Remarks
Designation: Associate Professor
1965
05
20
Department: Department of Physics, Dr. Babasaheb
Age:45 Yrs
Sex: Male
Ambedkar Marathwada University, Aurangabad M.S.
1.
APPLICATION FOR GRANT OF RESEARCH PROJECT UNDER 'DEFENCE GRANTIN-AID SCHEME'
(Four hard copies, duly signed by PI & concerned administrative authority at appropriate places, to
be submitted to Director, Directorate of Extramural Research & Intellectual Property Rights
(ER&IPR), ‘B’ Block, Room no. 348, DRDO Bhawan, Rajaji Marg, New Delhi-110011.
(Fax: 011-23017582, E-mail:[email protected])
Section 'A'
1.
2.
3.
4.
(a)
Title of Research proposal (Make the title concise & specific): Study and development of low
cost nanostructured CdS/CuInSe2 heterojunction thin film solar cell grown by chemical
route.
Type of Project: Basic/Applied
Aims of the Research Proposal
9 To grow the nanostructured heterojunction thin films of CdS/CuInSe2 material by using
chemical bath deposition or chemical ion exchange method.
9 To study the physico-chemical properties of the nanostructured heterojunction CdS/CuInSe2
thin films using various characterization techniques.
9 To develop the nanostructured heterojunction solar cell of CdS/CuInSe2 material.
9 To assess the feasibility of modified material as solar cell.
Details of Investigator (s)
Principal Investigator
(i)
Name
:
Dr. Ramphal Sharma
(ii)
Qualification
:
M. Sc., Ph. D.
(iii)
Designation
:
Associate professor
(iv)
Address
:
Office
:
Thin Film and Nanotechnology Laboratory,
Department of Physics,
Dr. Babasaheb Ambedkar Marathwada University,
Aurangabad-431004.
[email protected],
Residence
:
P-4, University campus,
Dr. Babasaheb Ambedkar Marathwada University,
Aurangabad-431004,
Name and Address of Institution (complete with Phone(Off & Res), Mobile, Fax & E-mail)
(a)
Institute
:
Thin Film & Nanotechnology Laboratory,
Department of Physics,
Dr. Babasaheb Ambedkar Marathwada University,
Aurangabad- 431004 M.S.
2. Mobile: +91 9422793173, Telephone: +91 240-2401365; Fax: +91 240-2403115/2403335.
(b) Co-Investigator: Nill
Name & Designation
Name and Address of Institution (complete with Phone(Off & Res), Mobile, Fax & E-mail)
5. Proposed duration of the research proposal: 36 months (3 years)
6. Amount of grant proposed for (give justification for each item):
Proposed expenditure on À (Rs. In lakhs) during ¾
a)
Year 1
Year 2
Year 3
Line
total
Staff :
b) Equipment (including spares thereof)
c)
Operation and maintenance of equipment
d)
Expendables
e)
Travel
f)
Contingencies
g) Visiting Faculty or Research Consultant(s)
h)
Procured services (other than (g)) and metered utilities
Add: Institutional overheads @ 15% of (a+b+c+d+e+f) only
Column totals
Details:
a.
Staff (Designation, number and pay for each post to be given)
b.
List of equipments proposed ( Refer col 12 also)
c.
Maintenance
d.
Expendables (Chemicals, Substrates, Glassware, photographic materials etc.)
e.
Contingencies ( Postage, Stationary, typing, Misc etc)
f.
Travel (only Domestic)
g.
Visiting Faculty, if any (give justification)
h.
Procured services
7. (i) Department of the Institution where research will be carried out.
Thin Film & Nanotechnology Laboratory,
Department of Physics,
Dr. Babasaheb Ambedkar Marathwada University,
Aurangabad- 431004 M.S.
(ii) Other departments, if any, which will cooperate in this study. (Mention name of DRDO Lab
also if any).
8. Brief review of the state-of-art in the field (National & International)
The heterojunction CdS/CuInSe2 thin film received considerable attention during the recent
years because of their actual and potential application in variety of semiconductor devices such
solar cell, photodetectors, photo-resistors, transistor and light activated valves for large screen
liquid crystal displays, electrochemical cell, gas sensor, and photosensor etc. these properties ar
basically exhibited by these heterojunction device because of its composition, interface,
morphology and particle size dependency etc., owing to this lot of research groups in India and
abroad are working on these material for developing the high efficiency solar cell but most of
these groups are using the physical methods for their work while we define to use the cost
effective promising chemical ion exchange method which is reliable for modifying the
stoichiometry, interface and large area deposition of the material over the substrate. Following
are some of the institutes working for thin films solar cell developments at National and
international levels.
National status
IIT Kharagpur, IIT Kanpur, IIT Chennai, Delhi University, Shivaji University, Kolhapur,
University of Pune, Cochin institute of science and technology, Cochin etc are some of the
institutes working in the field of heterojunction thin films solar cell developments. Department
of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad is also working on
in the same field. Research activities and laboratory are focused on the processing of nanostructural thin film depositions and their physico chemical characterizations using various
scientific techniques.
International status
At the best the electricity from the traditional sources like burning fossil fuel and other sources
has created the scarcity among the scientist not only at the National levels but at International
levels also so resolve this almighty lot of research groups are pioneering for development of low
cost high efficiency solar cells some of them are
Y. Kehan et al. who have prepared the nanostructured thin films and reported that the
nanostructured material can be used for enhancing the solar cell conversion efficiency.
S. Yoon et al. have reported about the nanoparticles based CuInSe2 thin film solar cell
formation.
T. Tanaka et al. cited about the use of SHI irradiation as post deposition technique for CuInSe2
based solar cell developments.
D. K. Ghosh et al. reported about the chalcopyrite thin film applications in solar cell
9. Scientific Importance of the project
Although lot of research groups are working for development of thin film based Solar cell
but still there are certain curies like how the composition, interface, grain growth affects the
solar cell efficiency, and we hope that the study that will be carried by us will be beneficial for
rest of the scientific community to know how to overcome these problems. The second aspects
majorly considered to be the cost effectiveness of the device which we suppose that can be
resolved using the low cost synthesis techniques such as chemical ion exchange method and that
too at room temperature. The conversion efficiency achieved in solar cell prepared by
nanostructured CdS/CuInSe2 heterojunction thin film may be useful for utilization in day to day
life.
10. Methods and Procedure
Methodology
• Thin films of nanostructured heterojunction of CdS/CuInSe2 would be prepared by
chemical ion exchange method at room temperature on ITO glass substrate.
• The obtained nanostructured heterojunction thin films will be annealed in different
ambient temperatures.
• As deposited and anneal thin films will be characterized by XRD, SEM, AFM, TEM,
and XPS characteristics.
• The optical properties and electrical properties will be studied by spectrophotometer
and four probes or two probe technique, respectively.
• To find out the best composition, annealing condition for device grade application of
nanostructured heterojunction thin films.
• Finally, to find out the conversion efficiency of the nanostrcutred heterojunction thin
film of CdS/CuInSe2 under illumination to 100 mW/cm2 light source.
Year wise work plan
First Year
• Literature survey and nanostructured CdS/CuInSe2 thin film deposition parameters
optimization.
Second Year
• Deposition of homogenous, good quality nanostructured CdS/CuInSe2 thin film and
study their physico-chemical characterizations.
• To study the annealing and compositional effect at different ambient temperatures on the
physico-chemical properties of the nanostructured CdS/CuInSe2 thin film.
Third Year
• Study the conversion efficiency of as grown, varying compositional and annealed
nanostructured CdS/CuInSe2 thin film.
• Finally to report the outcome of the project to the DRDO.
11. Facilities available for carrying out the proposed research work in Applicant's (a) Group, (b)
Department, (c) Institution and (d) other Institutions in the town.
The thin film and nanotechnology laboratory where the proposed work would be executed is
well furnished with synthesis and characterization facility such as for chemical synthesis
chemical ion exchange set up, chemical bath deposition unit, successive ionic layer adsorption
and reaction set up, electro-deposition set up, ultra-sonication deposition instruments etc while
for physical deposition methods instrument like vacuum coating unit is also available. For post
deposition modification method programmable annealing furnace with rapid annealing capacity
of 1400 oC is available in our lab. For characterizations of the thin film facility like thickness
measurements, optical properties such as absorbance, transmittance, reflectance and energy
band gap calculations, electrical properties like carrier concentration using Hall effect,
resistivity by two probe, four probe and thermoelectric power measurement are also available
for solar cell efficiency calculations the I-V unit for dark and illumination response
measurements is also available in our lab along with this the institute has XRD, AFM and TGA
machines which could be used for structural, morphological and thermal dependency
calculations of the material. Nevertheless with this the PI has collaborations with some of the
state of art research institutes which could provide their instruments facility to PI for the present
project investigations.
12. Additional equipments required for the proposed work with price & justification
13. Previous work done in this or related fields (To be attached as Appendix "F". Describe briefly
any work done that is particularly pertinent to the proposal and list (i) your personal
publications in this related area and (ii) personal publications in other areas).
See annexure I
14. Biographical sketch of investigator(s)
(i)
Name: Dr. Ramphal Sharma
(ii)
Designation: Associate Professor
(iii)
Date of Birth: 20/ 05/ 1965
(iv)
Education and Experience: M. Sc., Ph. D. Experience of nearly 24 years in research and
teaching.
Academic Qualifications
(begin with bachelor degree)
(a)
Degree
B. Sc.
M. Sc.
Ph. D.
University
University of Rajasthan, Jaipur.
Agra University, Agra.
University of Rajasthan, Jaipur.
Subjects(s)
Physics, Chemistry and Mathematics
Physics (Electronic)
Physics
Year
1984
1986
1991
(b)
Other research training and experience especially establishing research qualification in area
covered by this application including previous and present position.
Institution
Topic of work done
Year
Nano material developments for Thin film
Brain Pool, Fellow at Hanyang
Solar cell, optoelectronic, gas and medical
2008-2009
University Seoul, South Korea.
sensors etc. applications.
Visiting Scientist, ICTP, Italy
Post Doctorate Fellow, ICTP,
Tril, Italy
(v)
Developed the low temperaturere SnO2
Gas sensor.
Assessment of thermochemical and phase
diagram data in II-VI and I-III-VI2 systems
aimed at optimization of growth conditions
for selected semiconductors compounds such
as CuxS, CdS, CdSe, CdZnS, ZnS and CuInSe2
2001-2002
1998-1999
Field of major scientific interest:Synthesis and characterizations of nanostructured thin films
of chaclopyrites, chalcogenides and metal oxides for photovoltaic and gas sensor
applications as well as synthesis of nanocomposite thin film of metal oxides, polymers for
optoelectronic device applications and engineering their properties using the swift heavy ion
irradiation, annealing etc.
(vi)
Additional information (if any):
15. Research support for other projects of the applicant from various sources.
(List all other research support to PI & Co-PI).
Name of
Period of
Title of project
Total Amount
Agency
support
UGC, New
Studies on structural, Electrical
Rs.13,000/1993-1995
Delhi, India
and Optical properties of Cd1-x
ZnxTe, Solid Solution films
Rs.30,000/1997-1999
UGC, WRO,
Growth and Characterisation of
Pune
Ternary Semiconductor Thin
Films and hetero-homojunction
for upto-electronic device
applications
1998-1999
Growth and Characterization of
Post Doctorate
metal oxides ultra thin films as
Fellow ICTP,
sensors on micro machined silicon
Italy
substrate heater devices for the
detecting and monitoring the
pollution of hazardous gases
2001-2002
Micro-machined substrate heater
Visiting
element with 4 membranes,
Scientist, ICTP
design, realization,
Tril, Italy.
characterization, performance,
evaluation, optimization and test
results
2002-2004
UGC, New
Fabrication and characterization of Rs.4,88,560/Delhi, India
n-Si/p-CuIn(S1-xSex)2 and n-CdZn
(S1-xSex)2 p-CuIn (S1-xSex)2
heterojunction for photovoltaic
application.
$ 5,000
2002-2003
Growth and Characterization of
TWAS,
Research Grant semiconducting polymer and
inorganic thin films for detection
Programme,
of hazardous gases.
Italy
Studies
on
Growth
and Rs.14,92,500/- 2005-2008
DRDO,
Optoelectronic properties of solid
Ministry of
state CuxS Thin films Gas Sensors,
Defence, New
Delhi
operating at room termperature.
Growth, optoelectronic properties Rs.14,34,500/- 2005-2008
BRNS, DAE,
and effects of the Swift Heavy
BARC,
Ions Irradiation (SHI) on the
Mumbai.
composite M/Pollyaniline (MSnO2) thin films for the Gas
Sensor application.
2007-2010
UGC/DAEGrowth and effect of SHI Rs.3,27,000/CSR, Indore
irradiations on structural and optoelectrical properties
of nano
crystalline pure and doped Zinc
oxide semiconductor thin film for
gas sensor application.
IUAC, New
Effect of the Swift Heavy Irons Rs.3,75,000/2010-2013
Completed/
Ongoing
Completed
Completed
Completed
Completed
Completed
Completed
Completed
Completed
Completed
Ongoing
Delhi.
Irradiation on structural, Electrical
and
Optical
properties
of
CdS/Bi2S3 Thin
Films
for
hazardous
gases,
detection
applications,
UGC, New
Delhi.
Growth and effect of SHI ions on
structural and opto-electronic
properties of Nanocomposite CdSBi2S3 semiconductor thin films for
photosensor applications.
DST, New
Delhi.
Growth and effect of SHI
Rs.12,11,280/irradiation on structural and optoelectronic properties of
nanocomposites hybrid
ZnO/polyaniline (PANI) thin films
for gas sensor applications.
Growth
and
Optoelectronic Rs.25,00,000/Properties of Pure and Doped
Polyaniline Thin Films for Gas
Sensor Applications.
BRNS-DAEBARC,
Mumbai.
Rs.7,14,300/-
2008-2011 Ongoing
2008-2011 Ongoing
2011-2013 Ongoing
Section 'B'
1.
2.
Name of institution submitting application:
Department of Physics,
Dr. Babasaheb Ambedkar Marathwada University,
Aurangabad- 431004 M.S.
Address:
Thin Film & Nanotechnology Laboratory,
Department of Physics,
Dr. Babasaheb Ambedkar Marathwada University,
Aurangabad- 431004 M.S.
Name, designation and full address of the official to whom cheques are to be mailed.
The Registrar,
Dr. Babasaheb Ambedkar Marathwada University,
Aurangabad- 431004 M.S.
CERTIFICATE
The undersigned accept to agree to abide by the terms and conditions set forth for the Grants-in-aid
scheme of the Ministry of Defence and certify that basic necessary facilities for the proposed work
are available and the same can be extended to the investigator.
Signature of Executive Authority
of the institution
Signature of the Principal Investigator
Name and Designation
Date
Name and Designation
Date
Signature of co-investigator
Name and Designation
Date
Official stamp of
university/institution