First generation GaN broadband amplifier family
Gain a Clear Advantage
as Ampleon Takes GaN
Mainstream
With 35+ years of experience delivering RF power transistors, Ampleon is leading the industry in offering
GaN RF power devices through a secure and reliable mainstream supply chain for wireless infrastructure,
Industrial, Scientific, Medical (ISM) and Aerospace & Defense applications.
Key Features
Ampleon’s first generation GaN process technology features
best-in-class linearity while at the same time allowing
• High frequencies, bandwidth up to 6 GHz
designers to maintain power, ruggedness and efficiency. This
• High efficiencies
enables an uncompromised amplifier design that can reduce
• Excellent linearity
component count and reduce amplifier footprint.
• High power density
• High thermal conductivity
Our leading back-end assembly facility consistently leverages
• Operation at higher temperatures, without loss of reliability
the high power density of GaN into smaller and more
(250 °C compared to 225 °C for Si LDMOS)
broadband circuitry. Through a broad portfolio of high
• Excellent ruggedness
performance GaN and LDMOS products, Ampleon offers you
an unbiased choice in enabling optimized designs for your
application.
Applications
• Commercial wireless infrastructure (base stations)
• Radar systems up to C band
• Broadband and narrowband general purpose amplifiers
• Public mobile radios
• Industrial, Scientific, Medical applications
• Air traffic control
• Test instrumentation
• EMC testing
GaN Product Overview
Package
Load
optimized
f
(MHz)
P3dB
(W)
V DS
(V)
Linear *2)
GP (dB)
ηD
(%)
Test
signal
CLF1G0060(S)-10
SOT1227
for P3dB
for η D
3000
3000
16.0
12.8
50
50
16.5
17.5
55.5
60.3
100µs/10%
100µs/10%
CLF1G0060(S)-30
SOT1227
for P3dB
for η D
3000
3000
50.0
48.0
50
50
16.1
16.4
62.0
66.0
100µs/10%
100µs/10%
CLF1G0035(S)-50
SOT467C
for P3dB
for η D
3000
3000
65.5
58.7
50
50
14.1
15.0
58.6
62.1
CW
CW
CLF1G0035(S)-100
SOT467C
for P3dB
for η D
3000
3000
141.8
130.0
50
50
13.1
14.5
56.0
59.1
100µs/10%
100µs/10%
CLF1G0035(S)-100P *1)
SOT1228
for P3dB
for η D
3000
3000
65.5
58.7
50
50
14.1
15.0
58.6
62.1
CW
CW
CLF1G0035(S)-200P *1)
SOT1228
for P3dB
for η D
3000
3000
141.8
130.0
50
50
13.1
14.5
56.0
59.1
100µs/10%
100µs/10%
Type
All data in this table based on load-pull data
*1)
= Data for one section of the push-pull transistor
*2)
= Linear gain is gain at back-off (no compression)
Setting New Performance Boundaries for RF Power
Amplifiers
GaN products are termed High-Electron Mobility Transistors
(HEMT), a name that captures one of the intrinsic benefits
of GaN – the high electron drift velocity. However these
transistors are depletion-mode devices, so they are normally
on and require a negative gate bias to switch them off.
This biasing is not straightforward, so Ampleon also has a tried
and tested bias circuit available.
A further advantage of GaN is that it is a very hard structure,
so is capable of withstanding very high temperatures.
Ampleon’s GaN transistors will be specified to a maximum
temperature of 250 °C, compared to 225 °C for Si LDMOS.
With such high temperature capability there is a greater need
to have packages capable of exploiting this feature. For this
customers benefit from Ampleon’s 35 year legacy in RF power
products.
Simply put, GaN makes a step increase in efficiency and power
density performance over Si LDMOS in most applications, best
shown in figure. It is expected by independent market analysis
firms, that GaN product sales will grow into new application
areas beyond aerospace and defense applications. This
growth needs to be supported by mainstream RF Power
companies such as Ampleon, who have invested in GaN
technology for years.
Currently Ampleon is the only non-ITAR GaN supplier with
the best-in-class technology and industrial base that brings
customer excellence in product reliability, cost and a high
degree of confidence in the supply chain.
Transparent GaN Wafer
CLF1G0060(S)-10
Gp
(dB)
CLF1G0035(S)-100
aaa-003970
20
50
ηD
(%)
Gp
(dB)
aaa-003726
18
15
Gp
15
ηD
(%)
55
40
ηD
12
ηD
65
45
Gp
10
30
5
20
0
0
500
1000
1500
2000
f (MHz)
10
2500
CLF1G0060(S)-30
6
25
3
15
0
500
1000
1500
2000
f (MHz)
5
2500
IMD3 at 20 W peak power better than -39 dBc
CLF1G0035(S)-100P
aaa-003960
16
70
Gp
ηD
(%)
Gp
(dB)
aaa-005226
16
80
Gp
55
12
8
40
8
40
4
25
4
20
12
0
ηD
0
500
1000
1500
2000
2500
f (MHz)
0
2400
10
3000
IMD3 at 10 W peak power better than -38 dBc
CLF1G0035(S)-50
Gp
(dB)
35
0
IMD3 at 5 W peak power better than -39 dBc
Gp
(dB)
9
60
ηD
2500
2600
ηD
(%)
2700
2800
2900 3000
f (MHz)
0
3100
IMD3 at 20 W peak power better than -40 dBc
CLF1G0035(S)-200P
aaa-003695
16
70
Gp
ηD
(%)
Gp
(dB)
aaa-005265
16
80
ηD
(%)
Gp
55
12
8
40
8
4
25
4
12
60
ηD
0
0
500
1000
1500
2000
2500
f (MHz)
10
3000
IMD3 at 10 W peak power better than -38 dBc
0
2400
ηD
40
20
2500
2600
2700
2800
2900 3000
f (MHz)
0
3100
IMD3 at 20 W peak power better than -37 dBc
Support
Datasheets, test reports and simulation models are online available for all types.
To support customers in designing in new GaN products, Ampleon supplies samples and demonstration boards.
GaN Demo Boards
Additional Information
For more information, please visit: www.ampleon.com/gan
© Ampleon Netherlands B.V. 2016
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document
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www.ampleon.com
Date of release: April 2016
Document identifier: AMP LL 2016 0414
Printed in the Netherlands