Trench Gate Power Mosfet Market

Trench Gate Power Mosfet Market to Reflect Impressive Growth Rate During 2016 – 2026
A special type of metal oxide semiconductor field effect transistor (MOSFET) which is
designed to handle the significant power level is known as power MOSFET. A trench gate
power MOSFET is an attempt to achieve the high power drive capability by making a
complete chip to vertically conduct the current from one surface to another. This is
accomplished by stacking millions of trenches on a chip which are deep enough to cross
the opposite doped ‘body’ region below the top surface.
Each trench has a gate electrode and gate dielectric which control the current conduction
in their vicinity by virtue of the field effect. Like any other MOSFET, a trench gate power
MOSFET also contains the gate, source, drain, channel, and body regions as well as
exhibits a current flow in vertical direction. It has a LDD (lightly doped drain) region
between the drain and the channel making it capable of sustain the large voltage in an
OFF-state condition. The low resistance of a trench gate power MOSFET does not require
heat sinks in many instances which enables the device to be made in a surface mount
package for easier assembly on a printed circuit board. Fabrication of a trench-gate power
MOSFET using a dual doped body region is being proposed for further improvement in the
performance of the device.
Trench gate power MOSFET market are used as electronic switch in the power
management application. A trench gate power MOSFET has high impedence
which
means a trench gate power MOSFET is voltage controlled and not current controlled and
hence can be used to achieve high switching speed despite the use of low power driver.
The lowering of RON which is the on-resistance of the power MOSFET structure, is a
major factor driving the demand for trench gate power MOSFET. Another factor which is
driving the trench gate power MOSFET market is the enhancement of breakdown voltage
i.e. VBD. Reduction in switching delays is the factor leading to the growth of the trench
gate power MOSFET market. One of the drivers leading to the growth of the trench gate
power MOSFET market are that it is leading to the enhancement in transconductance and
dV/dt capability. High damage immunity has also augmented the growth of trench gate
power MOSFET market.
Minimization of energy losses due to the trench gate power MOSFET is another major
driver driving the market. The challenge faced by the trench gate power MOSFET market
is the technological limitation of strong corner effect due to depth of trench and sharp
corners. Another major challenge faced by the trench gate power MOSFET market is the
high fabrication cost of the trench gate power MOSFET.
The trench gate power MOSFET market can be segmented based on the application
(Automotives, Consumer Electronics, Healthcare, and others), based on Product Type (Ptype and N-type), and based on geography (North America, Europe, Asia Pacific, Middle
East & Africa, and Latin America). Automotives accounts for the largest trench gate power
MOSFET market as automobiles require voltage of less than 100V to be switched on and
off. Consumer Electronics accounts for the second largest market as trench gate power
MOSFET semiconductor devices enable miniaturization of electronics circuit which further
provides saving in costs and printed circuit board’s space. Europe is the largest trench
power gate MOSFET market owing to the biggest manufacturing market for automobiles.
Asia Pacific is the largest growing market for
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Some of the key players include Texas Instruments (U.S.), Vishay Siliconix (Germany),
Infineon Technologies (Germany), Linear Technology (U.S.), Mini Circuits (U.S.),
Polyphase Microwave Inc. (U.S.), Vadatech (U.S.), Maxim Integrated (U.S.), ST
Microelectronics (Switzerland), Microchip Technology (U.S.), NXP Semiconductors
(Netherlands), IXYS Corporation (U.S.), Microsemi (U.S.) etc.

A trench gate power MOSFET is an attempt to achieve the high power drive capability by making a complete chip to vertically conduct the current from one surface to another.

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