R-5680

High speed transmission For ICT infrastructure equipment
低誘電率・低誘電正接・高耐熱多層基板材料(低誘電ガラスクロス仕様)
Low Dk . Low Df and High Tg for Multi-layer Circuit Board Materials MEGTRON 7
(Low-dielectric glass cloth specification)
Prepreg
Laminate
R-5785 R-5680
MEGTRON6 の 1/2 の Df 値を実現。
業界最高の低伝送損失で、次世代 ICT 機器の高速伝送に貢献。
Realize 1/2, Df (dissipation factor) MEGTRON6.
Contributing to the high-speed transmission of next generation ICT infrastructure
equipment by low transmission loss of the industry's highest.
特長 /Features
1. Ultra-low transmission loss Low dielectric constant (Dk) 3.3(1GHz), 3.3(12GHz) Low dissipation factor (Df) 0.001(1GHz), 0.002(12GHz) (1/2 of MEGTRON6)
2. High heat resistance and reliability (equivalent to MEGTRON6)
3. Compatible with lead-free soldering
①超低伝送損失 低誘電率 Dk=3.3(1GHz), 3.3(12GHz) 低誘電正接 Df=0.001
(1GHz),0.002(12GHz) (MEGTRON6の1/2)
②優れた耐熱性と信頼性
(MEGTRON6と同等)
③鉛フリーはんだ対応
用途 /Applications
High-end servers, High-end routers, Supercomputers,
and other ICT infrastructure equipment
ハイエンドサーバ、ハイエンドルータ、スーパーコンピュータなど
ICT インフラ機器
誘電特性 Dielectric property
(E-glass)
3.6
3.4
(E-glass)
3.2
0.004
(E-glass)
0.002
(LowDK-glass)
Transmission loss (dB/m)
伝送損失
3.8
(LowDK-glass)
3.0
0
5
10
15
20
周波数
Frequency [GHz]
25
30
0.000
0
5
10 15 20
絶縁抵抗値
Insulation resistivity(Ω)
-30
-50
(E-glass)
0
1.0E+11
5
10
15
周波数 Frequency (GHz)
1.0E+10
1.0E+09
T288
1.0E+08
熱膨張係数
(タテ方向)
CTE (α1) x-axis
1.0E+07
1.0E+06
熱膨張係数
(ヨコ方向)
CTE (α1) y-axis
1.0E+05
評価サンプル Evaluation sample
0.35mm
1.6mm
400
1000
評価条件 Evaluation condition
スルーホール径
0.35mm
Through-hole diameter
スルーホール壁間距離
Through-hole wall to wall distance
t
20
一般特性 General properties
熱分解温度
Thermal decomposition temp (Td)
200
300
処理時間 Time (Hrs)
w
回路幅
(w)
0.1mm
Trace width
(w)
回路厚み
(t)
0.035mm
Trace thickness
(t)
絶縁層厚み
(h)
0.30mm
Dielectric thickness
(h)
(LowDK-glass)
-40
ガラス転移温度
Glass transition temp (Tg)
100
h
-20
評価項目
Item
1.0E+12
0
(LowDK-glass)
(E-glass)
-10
25 30
周波数
Frequency [GHz]
耐CAF性(実測値) CAF resistance
1.0E+04
評価サンプル Evaluation sample
0
(E-glass)
誘電正接
Dissipation factor (Df)
比誘電率
Dielectric constant (Dk)
伝送損失比較 Frequency dependence of transmission loss
0.006
4.0
0.35mm
温度
Temperature
121℃
湿度
Humidity
85%
印加電圧
Voltage
50V
試験方法
Test method
条件
Condition
単位
Unit
DSC
As received
TG/DTA
R-5785
R-5775
Low Dk-glass
E-glass
E-glass
℃
200
200
185
As received
℃
400
400
410
IPC TM-650 2.4.24.1
As received
min
>120
>120
>120
IPC TM-650 2.4.41
below Tg
14-16
14-16
14-16
14-16
14-16
14-16
42
42
45
280
280
260
ppm/℃
below Tg
熱膨張係数
(厚さ方向)
CTE (α1) z-axis
IPC TM-650 2.4.24
比誘電率
Dielectric constant (Dk)
IPC TM-650 2.5.5.9
C-24/23/50
@1GHz
3.3
3.6
3.7
誘電正接
Dissipation factor (Df)
IPC TM-650 2.5.5.9
C-24/23/50
@1GHz
0.001
0.0015
0.002
吸水率
Water absorption
IPC TM-650 2.6.2.1
D-24/23
%
0.06
0.06
0.14
JIS C6481
As received
GPa
18
19
19
IPC TM-650 2.4.8
As received
kN/m
1.2
1.2
1.2
曲げ弾性率
Flexural modulus (Weft)
銅箔引き剥がし強さ
Peel strength 1 oz (35μm)
above Tg
試験片の厚さは0.8mmです。
The sample thickness is 0.8mm
◎ 上記データは弊社での実測値であり、保証値ではありません。 The above data is actual values and not guaranteed values.
Circuit Board Materials | June 2014 | 4